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Niloy Mukherjee
Niloy Mukherjee
Eugenus, Inc.
Verified email at eugenustech.com
Title
Cited by
Cited by
Year
Fabrication of tapered, conical-shaped titania nanotubes
GK Mor, OK Varghese, M Paulose, N Mukherjee, CA Grimes
Journal of Materials Research 18, 2588-2593, 2003
7182003
Fabrication, characterization, and physics of III–V heterojunction tunneling field effect transistors (H-TFET) for steep sub-threshold swing
G Dewey, B Chu-Kung, J Boardman, JM Fastenau, J Kavalieros, R Kotlyar, ...
2011 International electron devices meeting, 33.6. 1-33.6. 4, 2011
4422011
Methods of forming nickel sulfide film on a semiconductor device
SB Clendenning, N Mukherjee, R Pillarisetty
US Patent 7,964,490, 2011
4212011
Advanced high-K gate dielectric for high-performance short-channel In0.7Ga0.3As quantum well field effect transistors on silicon substrate for low power logic …
M Radosavljevic, B Chu-Kung, S Corcoran, G Dewey, MK Hudait, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
2992009
CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture
M Radosavljevic, R Pillarisetty, G Dewey, N Mukherjee, J Kavalieros, ...
US Patent 9,123,567, 2015
2082015
Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to …
M Radosavljevic, G Dewey, D Basu, J Boardman, B Chu-Kung, ...
2011 international electron devices meeting, 33.1. 1-33.1. 4, 2011
2052011
High mobility strained germanium quantum well field effect transistor as the p-channel device option for low power (Vcc= 0.5 V) III–V CMOS architecture
R Pillarisetty, B Chu-Kung, S Corcoran, G Dewey, J Kavalieros, H Kennel, ...
2010 International Electron Devices Meeting, 6.7. 1-6.7. 4, 2010
1702010
Fabrication of nanoporous tungsten oxide by galvanostatic anodization
N Mukherjee, M Paulose, OK Varghese, GK Mor, CA Grimes
Journal of materials research 18, 2296-2299, 2003
1612003
Bioinspired synthesis of new silica structures
SV Patwardhan, N Mukherjee, M Steinitz-Kannan, SJ Clarson
Chemical communications, 1122-1123, 2003
1602003
Non-planar, multi-gate InGaAs quantum well field effect transistors with high-k gate dielectric and ultra-scaled gate-to-drain/gate-to-source separation for low power logic …
M Radosavljevic, G Dewey, JM Fastenau, J Kavalieros, R Kotlyar, ...
2010 International Electron Devices Meeting, 6.1. 1-6.1. 4, 2010
1592010
Metal-insulator-semiconductor tunneling contacts having an insulative layer disposed between source/drain contacts and source/drain regions
N Mukherjee, G Dewey, MV Metz, J Kavalieros, RS Chau
US Patent 8,110,877, 2012
153*2012
Conformation and assembly of polypeptide scaffolds in templating the synthesis of silica: an example of a polylysine macromolecular “switch”
SV Patwardhan, R Maheshwari, N Mukherjee, KL Kiick, SJ Clarson
Biomacromolecules 7 (2), 491-497, 2006
1502006
Transistors with high concentration of boron doped germanium
AS Murthy, GA Glass, T Ghani, R Pillarisetty, N Mukherjee, JT Kavalieros, ...
US Patent 8,901,537, 2014
1472014
Non-planar germanium quantum well devices
R Pillarisetty, JT Kavalieros, W Rachmady, U Shah, B Chu-Kung, ...
US Patent 8,283,653, 2012
1452012
Trench confined epitaxially grown device layer (s)
R Pillarisetty, SH Sung, N Goel, JT Kavalieros, S Dasgupta, VH Le, ...
US Patent 8,765,563, 2014
1082014
Effect of process parameters on the polymer mediated synthesis of silica at neutral pH
SV Patwardhan, N Mukherjee, SJ Clarson
Silicon Chemistry 1, 47-54, 2002
962002
The use of poly-L-lysine to form novel silica morphologies and the role of polypeptides in biosilicification
SV Patwardhan, N Mukherjee, SJ Clarson
Journal of Inorganic and Organometallic Polymers 11, 193-198, 2001
922001
High voltage field effect transistors
HW Then, R Chau, B Chu-Kung, G Dewey, J Kavalieros, M Metz, ...
US Patent 9,245,989, 2016
702016
Formation of fiber-like amorphous silica structures by externally applied shear
SV Patwardhan, N Mukherjee, SJ Clarson
Journal of Inorganic and Organometallic Polymers 11, 117-121, 2001
612001
Experimental observation and physics of “negative” capacitance and steeper than 40mV/decade subthreshold swing in Al0.83In0.17N/AlN/GaN MOS-HEMT on …
HW Then, S Dasgupta, M Radosavljevic, L Chow, B Chu-Kung, G Dewey, ...
2013 IEEE International Electron Devices Meeting, 28.3. 1-28.3. 4, 2013
582013
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