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Niloy Mukherjee
Niloy Mukherjee
Eugenus, Inc.
Verified email at eugenustech.com
Title
Cited by
Cited by
Year
Fabrication of tapered, conical-shaped titania nanotubes
GK Mor, OK Varghese, M Paulose, N Mukherjee, CA Grimes
Journal of materials research 18 (11), 2588-2593, 2003
6932003
Fabrication, characterization, and physics of III–V heterojunction tunneling field effect transistors (H-TFET) for steep sub-threshold swing
G Dewey, B Chu-Kung, J Boardman, JM Fastenau, J Kavalieros, R Kotlyar, ...
2011 International electron devices meeting, 33.6. 1-33.6. 4, 2011
3902011
Methods of forming nickel sulfide film on a semiconductor device
SB Clendenning, N Mukherjee, R Pillarisetty
US Patent 7,964,490, 2011
2882011
Advanced high-K gate dielectric for high-performance short-channel In0.7Ga0.3As quantum well field effect transistors on silicon substrate for low power logic …
M Radosavljevic, B Chu-Kung, S Corcoran, G Dewey, MK Hudait, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
2592009
Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to …
M Radosavljevic, G Dewey, D Basu, J Boardman, B Chu-Kung, ...
2011 international electron devices meeting, 33.1. 1-33.1. 4, 2011
1962011
CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture
M Radosavljevic, R Pillarisetty, G Dewey, N Mukherjee, J Kavalieros, ...
US Patent 9,123,567, 2015
1782015
Bioinspired synthesis of new silica structures
SV Patwardhan, N Mukherjee, M Steinitz-Kannan, SJ Clarson
Chemical Communications, 1122-1123, 2003
1592003
High mobility strained germanium quantum well field effect transistor as the p-channel device option for low power (Vcc= 0.5 V) III–V CMOS architecture
R Pillarisetty, B Chu-Kung, S Corcoran, G Dewey, J Kavalieros, H Kennel, ...
2010 International Electron Devices Meeting, 6.7. 1-6.7. 4, 2010
1582010
Non-planar, multi-gate InGaAs quantum well field effect transistors with high-k gate dielectric and ultra-scaled gate-to-drain/gate-to-source separation for low power logic …
M Radosavljevic, G Dewey, JM Fastenau, J Kavalieros, R Kotlyar, ...
2010 International Electron Devices Meeting, 6.1. 1-6.1. 4, 2010
1572010
Fabrication of nanoporous tungsten oxide by galvanostatic anodization
N Mukherjee, M Paulose, OK Varghese, GK Mor, CA Grimes
Journal of materials research 18, 2296-2299, 2003
1532003
Conformation and assembly of polypeptide scaffolds in templating the synthesis of silica: an example of a polylysine macromolecular “switch”
SV Patwardhan, R Maheshwari, N Mukherjee, KL Kiick, SJ Clarson
Biomacromolecules 7 (2), 491-497, 2006
1522006
Metal-insulator-semiconductor tunneling contacts having an insulative layer disposed between source/drain contacts and source/drain regions
N Mukherjee, G Dewey, MV Metz, J Kavalieros, RS Chau
US Patent 8,110,877, 2012
139*2012
Non-planar germanium quantum well devices
R Pillarisetty, JT Kavalieros, W Rachmady, U Shah, B Chu-Kung, ...
US Patent 8,283,653, 2012
1382012
Metal-insulator-semiconductor tunneling contacts having an insulative layer disposed between source/drain contacts and source/drain regions
N Mukherjee, G Dewey, MV Metz, J Kavalieros, RS Chau
US Patent 8,110,877, 2012
1372012
Transistors with high concentration of boron doped germanium
AS Murthy, GA Glass, T Ghani, R Pillarisetty, N Mukherjee, JT Kavalieros, ...
US Patent 8,901,537, 2014
1312014
Non-planar germanium quantum well devices
R Pillarisetty, JT Kavalieros, W Rachmady, U Shah, B Chu-Kung, ...
US Patent 8,283,653, 2012
1252012
Non-planar germanium quantum well devices
R Pillarisetty, JT Kavalieros, W Rachmady, U Shah, B Chu-Kung, ...
US Patent 8,283,653, 2012
1252012
The use of poly-L-lysine to form novel silica morphologies and the role of polypeptides in biosilicification
SV Patwardhan, N Mukherjee, SJ Clarson
Journal of Inorganic and Organometallic Polymers 11, 193-198, 2001
942001
Trench confined epitaxially grown device layer (s)
R Pillarisetty, SH Sung, N Goel, JT Kavalieros, S Dasgupta, VH Le, ...
US Patent 8,765,563, 2014
912014
Effect of process parameters on the polymer mediated synthesis of silica at neutral pH
SV Patwardhan, N Mukherjee, SJ Clarson
Silicon Chemistry 1, 47-54, 2002
902002
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