| 3.8 MV/cm Breakdown Strength of MOVPE-Grown Sn-doped β-Ga2O3 MOSFETs AJ Green, KD Chabak, ER Heller, RC Fitch, M Baldini, A Fiedler, ... IEEE Electron Device Letters 37 (7), 902-905, 2016 | 522 | 2016 |
| Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage (Cover Image) KD Chabak, N Moser, AJ Green, DE Walker Jr, SE Tetlak, E Heller, ... Applied Physics Letters 109 (21), 213501, 2016 | 319 | 2016 |
| Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures Y Zhang, A Neal, Z Xia, C Joishi, JM Johnson, Y Zheng, S Bajaj, ... Applied Physics Letters 112 (17), 173502, 2018 | 287 | 2018 |
| β-Ga2O3 MOSFETs for Radio Frequency Operation AJ Green, KD Chabak, M Baldini, N Moser, R Gilbert, RC Fitch, G Wagner, ... IEEE Electron Device Letters 38 (6), 790-793, 2017 | 252 | 2017 |
| Donors and deep acceptors in β-Ga2O3 AT Neal, S Mou, S Rafique, H Zhao, E Ahmadi, JS Speck, KT Stevens, ... Applied Physics Letters 113 (6), 062101, 2018 | 200 | 2018 |
| Ge-Doped β-Ga2O3 MOSFETs N Moser, J McCandless, A Crespo, K Leedy, A Green, A Neal, S Mou, ... IEEE Electron Device Letters 38 (6), 775-778, 2017 | 169 | 2017 |
| Recessed-Gate Enhancement-mode β-Ga2O3 MOSFETs KD Chabak, JP McCandless, NA Moser, AJ Green, K Mahalingam, ... IEEE Electron Device Letters, 2018 | 167 | 2018 |
| Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition KD Leedy, KD Chabak, V Vasilyev, DC Look, JJ Boeckl, JL Brown, ... Applied Physics Letters 111 (1), 012103, 2017 | 135 | 2017 |
| High-power Ka-band performance of AlInN/GaN HEMT with 9.8-nm-thin barrier A Crespo, MM Bellot, KD Chabak, JK Gillespie, GH Jessen, V Miller, ... IEEE Electron Device Letters 31 (1), 2-4, 2010 | 117 | 2010 |
| Flexible gallium nitride for high‐performance, strainable radio‐frequency devices NR Glavin, KD Chabak, ER Heller, EA Moore, TA Prusnick, B Maruyama, ... Advanced Materials 29 (47), 1701838, 2017 | 100 | 2017 |
| Full-wafer characterization of AlGaN/GaN HEMTs on free-standing CVD diamond substrates KD Chabak, JK Gillespie, V Miller, A Crespo, J Roussos, M Trejo, ... IEEE Electron Device Letters 31 (2), 99-101, 2010 | 95 | 2010 |
| Incomplete Ionization of a 110 meV Unintentional Donor in β-Ga2O3 and its Effect on Power Devices AT Neal, S Mou, R Lopez, JV Li, DB Thomson, KD Chabak, GH Jessen Scientific reports 7 (1), 13218, 2017 | 94 | 2017 |
| High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge NA Moser, JP McCandless, A Crespo, KD Leedy, AJ Green, ER Heller, ... Applied Physics Letters 110 (14), 143505, 2017 | 75 | 2017 |
| Lateral β-Ga2O3 field effect transistors KD Chabak, KD Leedy, AJ Green, S Mou, AT Neal, T Asel, ER Heller, ... Semiconductor Science and Technology 35 (1), 013002, 2019 | 71 | 2019 |
| Thermal properties of AlGaN/GaN HFETs on bulk GaN substrates N Killat, M Montes, JW Pomeroy, T Paskova, KR Evans, J Leach, X Li, ... IEEE Electron device letters 33 (3), 366-368, 2012 | 69 | 2012 |
| β-Gallium oxide power electronics AJ Green, J Speck, G Xing, P Moens, F Allerstam, K Gumaelius, T Neyer, ... APL Materials 10 (2), 029201, 2022 | 68 | 2022 |
| III-V Junctionless Gate-All-Around Nanowire MOSFETs for High Linearity Low Power Applications Y Song, C Zhang, R Dowdy, K Chabak, PK Mohseni, W Choi, X Li IEEE Electron Device Letters 35 (3), 324-326, 2014 | 67 | 2014 |
| High-speed planar GaAs nanowire arrays with fmax> 75 GHz by wafer-scale bottom-up growth (Cover Image) X Miao*, K Chabak*, C Zhang, P Katal Mohseni, D Walker Jr, X Li Nano Letters 15 (5), 2780-2786, 2015 | 64 | 2015 |
| Implementation of High Power Density X-Band AlGaN/GaN High Electron Mobility Transistors (HEMTs) in a Millimeter-Wave Monolithic Microwave Integrated Circuit (MMIC) Process R Fitch, D Walker, A Green, S Tetlak, J Gillespie, R Gilbert, K Sutherlin, ... IEEE Electron Device Letters 36 (10), 1004-1007, 2015 | 55 | 2015 |
| ScAlN/GaN high-electron-mobility transistors with 2.4-A/mm current density and 0.67-S/mm transconductance AJ Green, JK Gillespie, RC Fitch, DE Walker, M Lindquist, A Crespo, ... IEEE Electron Device Letters 40 (7), 1056-1059, 2019 | 52 | 2019 |
Andrew J. GreenAir Force Research LabVerified email at us.af.mil
