Salah Bedair
Title
Cited by
Cited by
Year
Room temperature ferromagnetic properties of (Ga, Mn) N
ML Reed, NA El-Masry, HH Stadelmaier, MK Ritums, MJ Reed, CA Parker, ...
Applied Physics Letters 79 (21), 3473-3475, 2001
8092001
Phase separation in InGaN grown by metalorganic chemical vapor deposition
NA El-Masry, EL Piner, SX Liu, SM Bedair
Applied physics letters 72 (1), 40-42, 1998
3501998
Stacked quantum well aluminum indium gallium nitride light emitting diodes
FG McIntosh, SM Bedair, NA El-Masry, JC Roberts
US Patent 5,684,309, 1997
2791997
Violet/blue emission from epitaxial cerium oxide films on silicon substrates
AH Morshed, ME Moussa, SM Bedair, R Leonard, SX Liu, N El-Masry
Applied physics letters 70 (13), 1647-1649, 1997
2191997
Atomic layer epitaxy of III‐V binary compounds
SM Bedair, MA Tischler, T Katsuyama, NA El‐Masry
Applied physics letters 47 (1), 51-53, 1985
2151985
Methods of forming nano-scale electronic and optoelectronic devices using non-photolithographically defined nano-channel templates
Z Zhang, V Misra, SMA Bedair, M Ozturk
US Patent 6,709,929, 2004
1692004
Effect of hydrogen on the indium incorporation in InGaN epitaxial films
EL Piner, MK Behbehani, NA El-Masry, FG McIntosh, JC Roberts, ...
Applied physics letters 70 (4), 461-463, 1997
1651997
Reaction and regrowth control of CeO2 on Si(111) surface for the silicon‐on‐insulator structure
T Chikyow, SM Bedair, L Tye, NA El‐Masry
Applied physics letters 65 (8), 1030-1032, 1994
1641994
Electrical characteristics of epitaxial CeO2 on Si(111)
L Tye, NA El‐Masry, T Chikyow, P McLarty, SM Bedair
Applied physics letters 65 (24), 3081-3083, 1994
1561994
Determination of the critical layer thickness in the InGaN/GaN heterostructures
CA Parker, JC Roberts, SM Bedair, MJ Reed, SX Liu, NA El-Masry
Applied Physics Letters 75 (18), 2776-2778, 1999
1391999
Phase separation and ordering coexisting in grown by metal organic chemical vapor deposition
MK Behbehani, EL Piner, SX Liu, NA El-Masry, SM Bedair
Applied physics letters 75 (15), 2202-2204, 1999
1291999
High optical quality AlInGaN by metalorganic chemical vapor deposition
ME Aumer, SF LeBoeuf, FG McIntosh, SM Bedair
Applied physics letters 75 (21), 3315-3317, 1999
1231999
Growth and characterization of AlInGaN quaternary alloys
FG McIntosh, KS Boutros, JC Roberts, SM Bedair, EL Piner, NA El‐Masry
Applied physics letters 68 (1), 40-42, 1996
1211996
Self‐limiting mechanism in the atomic layer epitaxy of GaAs
MA Tischler, SM Bedair
Applied physics letters 48 (24), 1681-1683, 1986
1201986
Optical band gap dependence on composition and thickness of grown on GaN
CA Parker, JC Roberts, SM Bedair, MJ Reed, SX Liu, NA El-Masry, ...
Applied Physics Letters 75 (17), 2566-2568, 1999
1171999
Room temperature magnetic (Ga, Mn) N: a new material for spin electronic devices
ML Reed, MK Ritums, HH Stadelmaier, MJ Reed, CA Parker, SM Bedair, ...
Materials Letters 51 (6), 500-503, 2001
1112001
Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures
ME Aumer, SF LeBoeuf, SM Bedair, M Smith, JY Lin, HX Jiang
Applied Physics Letters 77 (6), 821-823, 2000
1102000
A two‐junction cascade solar‐cell structure
SM Bedair, MF Lamorte, JR Hauser
Applied Physics Letters 34 (1), 38-39, 1979
1071979
Optoelectronic devices having arrays of quantum-dot compound semiconductor superlattices therein
Z Zhang, V Misra, SMA Bedair, M Ozturk
US Patent 6,914,256, 2005
1042005
Effect of doping on the magnetic properties of GaMnN: Fermi level engineering
MJ Reed, FE Arkun, EA Berkman, NA Elmasry, J Zavada, MO Luen, ...
Applied Physics Letters 86 (10), 102504, 2005
962005
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