| Microlithographic array for macromolecule and cell fractionation RH Austin, WD Volkmuth, LC Rathbun US Patent 5,837,115, 1998 | 246 | 1998 |
| Photoluminescence of AlxGa1−xAs grown by molecular beam epitaxy G Wicks, WI Wang, CEC Wood, LF Eastman, L Rathbun Journal of Applied Physics 52 (9), 5792-5796, 1981 | 154 | 1981 |
| On the origin and elimination of macroscopic defects in MBE films CEC Wood, L Rathbun, H Ohno, D DeSimone Journal of Crystal Growth 51 (2), 299-303, 1981 | 101 | 1981 |
| GaInAs‐AlInAs structures grown by molecular beam epitaxy H Ohno, CEC Wood, L Rathbun, DV Morgan, GW Wicks, LF Eastman Journal of Applied Physics 52 (6), 4033-4037, 1981 | 96 | 1981 |
| Halide formation and etching of Cu thin films with Cl2 and Br2 S Park, TN Rhodin, LC Rathbun Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 4 (2 …, 1986 | 46 | 1986 |
| Dry development of ion beam exposed PMMA resist I Adesida, JD Chinn, L Rathbun, ED Wolf Journal of Vacuum Science and Technology 21 (2), 666-671, 1982 | 37 | 1982 |
| Physical and materials limitations on burnout voltage of GaAs power MESFET's S Tiwari, LF Eastman, L Rathbun IEEE Transactions on Electron Devices 27 (6), 1045-1054, 1980 | 32 | 1980 |
| A critical discussion of emission mechanisms and reaction rates for the ion‐assisted etching of GaAs (100) WL O’Brien, CM Paulsen‐Boaz, TN Rhodin, LC Rathbun Journal of applied physics 64 (11), 6523-6529, 1988 | 31 | 1988 |
| New technique and analysis of accelerated electromigration life testing in multilevel metallizations LP Muray, LC Rathbun, ED Wolf Applied physics letters 53 (15), 1414-1416, 1988 | 29 | 1988 |
| Very low resistance Au/Ge/Ni/Ag based Ohmic contact formation to Al0.25/Ga0.75As/GaAs and Al0.48In0.52As/Ga0.47In0.53As heterostructures: A behavioral … P Zwicknagl, SD Mukherjee, PM Capani, H Lee, HT Griem, L Rathbun, ... Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1986 | 28 | 1986 |
| Molecular‐beam epitaxial group III arsenide alloys: Effect of substrate temperature on composition CEC Wood, DV Morgan, L Rathbun Journal of Applied Physics 53 (6), 4524-4526, 1982 | 27 | 1982 |
| Interfacial reaction between a Ni/Ge bilayer and silicon (100) J Li, QZ Hong, JW Mayer, L Rathbun Journal of applied physics 67 (5), 2506-2511, 1990 | 26 | 1990 |
| Effect of inert ion bombardment on chemisorption and etching of aluminum films in Cl2, Br2, CCl4, and CBr4 S Park, LC Rathbun, TN Rhodin Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 3 (3 …, 1985 | 25 | 1985 |
| Extremal Effects in Rotationally Inelastic Diffraction from Crystal Surfaces RG Rowe, L Rathbun, G Ehrlich Physical Review Letters 35 (16), 1104, 1975 | 25 | 1975 |
| Electrical and structural characteristics of thin nitrided gate oxides prepared by rapid thermal nitridation J Nulman, JP Krusius, L Rathbun 1984 International Electron Devices Meeting, 169-172, 1984 | 23 | 1984 |
| Instabilities in the growth of AlxGa(1−x)As/Al/AlyGa(1−y)As structures by molecular beam epitaxy K Okamoto, CEC Wood, L Rathbun, LF Eastman Journal of Applied Physics 53 (3), 1532-1535, 1982 | 13 | 1982 |
| Electron‐beam lithography and chemically assisted ion beam etching for the fabrication of grating surface‐emitting broad‐area AlGaAs lasers RC Tiberio, GA Porkolab, JE Johnson, WJ Grande, LC Rathbun, ED Wolf, ... Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1990 | 12 | 1990 |
| Growth of GaAs‐Al‐GaAs by migration‐enhanced epitaxy B Tadayon, S Tadayon, MG Spencer, GL Harris, L Rathbun, JT Bradshaw, ... Applied physics letters 53 (26), 2664-2665, 1988 | 12 | 1988 |
| Low resistance alloyed ohmic contacts to Al0. 48In0. 52As/n+-Ga0. 47In0. 53As PM Capani, SD Mukherjee, P Zwicknagl, JD Berry, HT Griem, L Rathbun, ... Electronics Letters 11 (20), 446-447, 1984 | 10 | 1984 |
| Ion‐induced chlorination of titanium leading to enhanced etching WL O’Brien, TN Rhodin, LC Rathbun The Journal of chemical physics 89 (8), 5264-5272, 1988 | 9 | 1988 |
Seong-Ju ParkGwangju Institute of Science and Technology, KoreaVerified email at gist.ac.kr
