Andrew J. Green
Andrew J. Green
Verified email at
Cited by
Cited by
3.8 MV/cm Breakdown Strength of MOVPE-Grown Sn-doped β-Ga2O3 MOSFETs
AJ Green, KD Chabak, ER Heller, RC Fitch, M Baldini, A Fiedler, ...
IEEE Electron Device Letters, 2016
Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage
KD Chabak, N Moser, AJ Green, DE Walker Jr, SE Tetlak, E Heller, ...
Applied Physics Letters 109 (21), 213501, 2016
β-Ga2O3 MOSFETs for Radio Frequency Operation
AJ Green, KD Chabak, M Baldini, N Moser, R Gilbert, RC Fitch, G Wagner, ...
IEEE Electron Device Letters 38 (6), 790-793, 2017
Ge-Doped β-Ga2O3 MOSFETs
N Moser, J McCandless, A Crespo, K Leedy, A Green, A Neal, S Mou, ...
IEEE Electron Device Letters 38 (6), 775-778, 2017
Recessed-Gate Enhancement-Mode β-Ga2O3 MOSFETs
KD Chabak, JP McCandless, NA Moser, AJ Green, K Mahalingam, ...
IEEE Electron Device Letters 39 (1), 67-70, 2018
Superheating Water by CW Excitation of Gold Nanodots
MT Carlson, AJ Green, HH Richardson
Nano Letters, 1534-1537, 2012
Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition
KD Leedy, KD Chabak, V Vasilyev, DC Look, JJ Boeckl, JL Brown, ...
Applied Physics Letters 111 (1), 012103, 2017
High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge
NA Moser, JP McCandless, A Crespo, KD Leedy, AJ Green, ER Heller, ...
Applied Physics Letters 110 (14), 143505, 2017
Increasing efficiency, speed, and responsivity of vanadium dioxide based photothermally driven actuators using single-wall carbon nanotube thin-films
T Wang, D Torres, FE Fernández, AJ Green, C Wang, N Sepúlveda
ACS nano 9 (4), 4371-4378, 2015
Lateral β-Ga2O3 field effect transistors
KD Chabak, KD Leedy, AJ Green, S Mou, AT Neal, T Asel, ER Heller, ...
Semiconductor Science and Technology 35 (1), 013002, 2019
Comparison of Vapor Formation of Water at the Solid/Water Interface to Colloidal Solutions Using Optically Excited Gold Nanostructures
S Baral, A Green, MY Livshits, AO Govorov, HH Richardson
ACS Nano 8 (2), pp 1439-1448, 2014
β-Gallium oxide power electronics
AJ Green, J Speck, G Xing, P Moens, F Allerstam, K Gumaelius, T Neyer, ...
APL Materials 10 (2), 029201, 2022
Implementation of High Power Density X-Band AlGaN/GaN High Electron Mobility Transistors (HEMTs) in a Millimeter-Wave Monolithic Microwave Integrated Circuit (MMIC) Process
R Fitch, D Walker, A Green, S Tetlak, J Gillespie, R Gilbert, K Sutherlin, ...
IEEE, 2015
ScAlN/GaN high-electron-mobility transistors with 2.4-A/mm current density and 0.67-S/mm transconductance
AJ Green, JK Gillespie, RC Fitch, DE Walker, M Lindquist, A Crespo, ...
IEEE Electron Device Letters 40 (7), 1056-1059, 2019
Photonic jets for highly efficient mid-IR focal plane arrays with large angle‐of‐view
F Abolmaali, A Brettin, A Green, NI Limberopoulos, AM Urbas, ...
Optics express 25 (25), 31174-31185, 2017
Sub-micron gallium oxide radio frequency field-effect transistors
KD Chabak, DE Walker, AJ Green, A Crespo, M Lindquist, K Leedy, ...
2018 IEEE MTT-S International Microwave Workshop Series on Advanced …, 2018
RF power performance of Sc (al, Ga) N/GaN HEMTs at Ka-band
AJ Green, N Moser, NC Miller, KJ Liddy, M Lindquist, M Elliot, JK Gillespie, ...
IEEE Electron Device Letters 41 (8), 1181-1184, 2020
Si content variation and influence of deposition atmosphere in homoepitaxial Si-doped -Ga2O3 films by pulsed laser deposition
KD Leedy, KD Chabak, V Vasilyev, DC Look, K Mahalingam, JL Brown, ...
APL Materials 6 (10), 101102, 2018
Thin channel β-Ga2O3 MOSFETs with self-aligned refractory metal gates
KJ Liddy, AJ Green, NS Hendricks, ER Heller, NA Moser, KD Leedy, ...
Applied Physics Express 12 (12), 126501, 2019
Pulsed Power Performance of β-Ga₂O₃ MOSFETs at L-Band
NA Moser, T Asel, KJ Liddy, M Lindquist, NC Miller, S Mou, A Neal, ...
IEEE Electron Device Letters 41 (7), 989-992, 2020
The system can't perform the operation now. Try again later.
Articles 1–20