| Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices F Roccaforte, P Fiorenza, G Greco, RL Nigro, F Giannazzo, F Iucolano, ... Microelectronic Engineering 187, 66-77, 2018 | 416 | 2018 |
| Ohmic contacts to Gallium Nitride materials G Greco, F Iucolano, F Roccaforte Applied Surface Science 383, 324-345, 2016 | 300 | 2016 |
| An overview of normally-off GaN-based high electron mobility transistors F Roccaforte, G Greco, P Fiorenza, F Iucolano Materials 12 (10), 1599, 2019 | 238 | 2019 |
| Review of technology for normally-off HEMTs with p-GaN gate G Greco, F Iucolano, F Roccaforte Materials Science in Semiconductor Processing 78, 96-106, 2018 | 237 | 2018 |
| Barrier inhomogeneity and electrical properties of Pt∕ GaN Schottky contacts F Iucolano, F Roccaforte, F Giannazzo, V Raineri Journal of Applied Physics 102 (11), 2007 | 189 | 2007 |
| Surface and interface issues in wide band gap semiconductor electronics F Roccaforte, F Giannazzo, F Iucolano, J Eriksson, MH Weng, V Raineri Applied Surface Science 256 (19), 5727-5735, 2010 | 121 | 2010 |
| Temperature dependence of the specific resistance in Ti∕ Al∕ Ni∕ Au contacts on n-type GaN F Iucolano, F Roccaforte, A Alberti, C Bongiorno, S Di Franco, V Raineri Journal of applied physics 100 (12), 2006 | 111 | 2006 |
| Nanoscale carrier transport in Ti∕ Al∕ Ni∕ Au Ohmic contacts on AlGaN epilayers grown on Si (111) F Roccaforte, F Iucolano, F Giannazzo, A Alberti, V Raineri Applied physics letters 89 (2), 2006 | 89 | 2006 |
| Experimental and numerical analysis of hole emission process from carbon-related traps in GaN buffer layers A Chini, G Meneghesso, M Meneghini, F Fantini, G Verzellesi, A Patti, ... IEEE Transactions on Electron Devices 63 (9), 3473-3478, 2016 | 88 | 2016 |
| Correlation between microstructure and temperature dependent electrical behavior of annealed Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN heterostructures F Iucolano, G Greco, F Roccaforte Applied Physics Letters 103 (20), 2013 | 73 | 2013 |
| Temperature behavior of inhomogeneous Pt∕ GaN Schottky contacts F Iucolano, F Roccaforte, F Giannazzo, V Raineri Applied Physics Letters 90 (9), 2007 | 72 | 2007 |
| Effects of annealing treatments on the properties of Al/Ti/p-GaN interfaces for normally OFF p-GaN HEMTs G Greco, F Iucolano, S Di Franco, C Bongiorno, A Patti, F Roccaforte IEEE Transactions on Electron Devices 63 (7), 2735-2741, 2016 | 66 | 2016 |
| Influence of high-temperature GaN annealed surface on the electrical properties of Ni/GaN Schottky contacts F Iucolano, F Roccaforte, F Giannazzo, V Raineri Journal of Applied Physics 104 (9), 2008 | 53 | 2008 |
| GaN-on-Si HEMTs for wireless base stations F Iucolano, T Boles Materials Science in Semiconductor Processing 98, 100-105, 2019 | 50 | 2019 |
| Channel Mobility in GaN Hybrid MOS-HEMT Using SiO2as Gate Insulator P Fiorenza, G Greco, F Iucolano, A Patti, F Roccaforte IEEE Transactions on Electron Devices 64 (7), 2893-2899, 2017 | 47 | 2017 |
| Nanoscale current transport through Schottky contacts on wide bandgap semiconductors F Giannazzo, F Roccaforte, F Iucolano, V Raineri, F Ruffino, MG Grimaldi Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009 | 45 | 2009 |
| Nanoscale structural and electrical evolution of Ta-and Ti-based contacts on AlGaN/GaN heterostructures G Greco, F Giannazzo, F Iucolano, R Lo Nigro, F Roccaforte Journal of Applied Physics 114 (8), 2013 | 41 | 2013 |
| Electrical behavior of AlGaN/GaN heterostuctures upon high-temperature selective oxidation F Roccaforte, F Giannazzo, F Iucolano, C Bongiorno, V Raineri Journal of Applied Physics 106 (2), 2009 | 40 | 2009 |
| Slow and fast traps in metal-oxide-semiconductor capacitors fabricated on recessed AlGaN/GaN heterostructures P Fiorenza, G Greco, F Iucolano, A Patti, F Roccaforte Applied Physics Letters 106 (14), 2015 | 39 | 2015 |
| High-performance graphene/AlGaN/GaN Schottky junctions for hot electron transistors F Giannazzo, G Greco, E Schilirò, R Lo Nigro, I Deretzis, A La Magna, ... ACS Applied Electronic Materials 1 (11), 2342-2354, 2019 | 36 | 2019 |
