| Editors' Choice—Review—Theory and Characterization of Doping and Defects in β-Ga2O3 MJ Tadjer, JL Lyons, N Nepal, JA Freitas, AD Koehler, GM Foster ECS Journal of Solid State Science and Technology 8 (7), Q3187-Q3194, 2019 | 196 | 2019 |
| Optical signatures of deep level defects in Ga2O3 H Gao, S Muralidharan, N Pronin, MR Karim, SM White, T Asel, G Foster, ... Applied Physics Letters 112 (24), 2018 | 143 | 2018 |
| Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition VD Wheeler, N Nepal, DR Boris, SB Qadri, LO Nyakiti, A Lang, A Koehler, ... Chemistry of Materials 32 (3), 1140-1152, 2020 | 62 | 2020 |
| Defect manipulation to control ZnO micro-/nanowire-metal contacts JW Cox, GM Foster, A Jarjour, H von Wenckstern, M Grundmann, ... Nano letters 18 (11), 6974-6980, 2018 | 21 | 2018 |
| Native point defect measurement and manipulation in ZnO nanostructures L Brillson, J Cox, H Gao, G Foster, W Ruane, A Jarjour, M Allen, D Look, ... Materials 12 (14), 2242, 2019 | 20 | 2019 |
| Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments GM Foster, A Koehler, M Ebrish, J Gallagher, T Anderson, B Noesges, ... Applied Physics Letters 117 (8), 2020 | 18 | 2020 |
| A simple edge termination design for vertical GaN PN diodes P Pandey, TM Nelson, WM Collings, MR Hontz, DG Georgiev, AD Koehler, ... IEEE Transactions on Electron Devices 69 (9), 5096-5103, 2022 | 16 | 2022 |
| Impact of defect distribution on IrOx/ZnO interface doping and Schottky barriers GM Foster, H Gao, G Mackessy, AM Hyland, MW Allen, B Wang, DC Look, ... Applied Physics Letters 111 (10), 2017 | 13 | 2017 |
| Effect of GaN substrate properties on vertical GaN PiN diode electrical performance JC Gallagher, TJ Anderson, AD Koehler, MA Ebrish, GM Foster, ... Journal of Electronic Materials 50, 3013-3021, 2021 | 12 | 2021 |
| Fano q-reversal in topological insulator Bi2Se3 SV Dordevic, GM Foster, MS Wolf, N Stojilovic, H Lei, C Petrovic, Z Chen, ... Journal of Physics: Condensed Matter 28 (16), 165602, 2016 | 11 | 2016 |
| Impact of Mg content on native point defects in MgxZn1− xO (0≤ x≤ 0.56) J Perkins, GM Foster, M Myer, S Mehra, JM Chauveau, A Hierro, ... APL materials 3 (6), 2015 | 10 | 2015 |
| Direct measurement of defect and dopant abruptness at high electron mobility ZnO homojunctions GM Foster, G Faber, YF Yao, CC Yang, ER Heller, DC Look, LJ Brillson Applied Physics Letters 109 (14), 2016 | 9 | 2016 |
| Defect Characterization, Imaging, and Control in Wide-Bandgap Semiconductors and Devices LJ Brillson, GM Foster, J Cox, WT Ruane, AB Jarjour, H Gao, ... Journal of Electronic Materials 47, 4980-4986, 2018 | 7 | 2018 |
| A study on the impact of mid-gap defects on vertical GaN diodes MA Ebrish, TJ Anderson, AD Koehler, GM Foster, JC Gallagher, RJ Kaplar, ... IEEE Transactions on Semiconductor Manufacturing 33 (4), 546-551, 2020 | 6 | 2020 |
| Lateral GaN JFET devices on large area engineered substrates TJ Anderson, LE Luna, O Aktas, GM Foster, AD Koehler, MJ Tadjer, ... ECS Journal of Solid State Science and Technology 8 (12), Q226, 2019 | 4 | 2019 |
| Reduced contact resistance in GaN using selective area Si ion implantation JC Gallagher, TJ Anderson, AD Koehler, GM Foster, AG Jacobs, ... IEEE Transactions on Semiconductor Manufacturing 32 (4), 478-482, 2019 | 4 | 2019 |
| Native point defect energies, densities, and electrostatic repulsion across (Mg, Zn) O alloys GM Foster, J Perkins, M Myer, S Mehra, JM Chauveau, A Hierro, ... physica status solidi (a) 212 (7), 1448-1454, 2015 | 4 | 2015 |
| Magneto‐optical effects in with: Comparison with topo‐logical insulator with SV Dordevic, GM Foster, N Stojilovic, EA Evans, ZG Chen, ZQ Li, ... physica status solidi (b) 251 (8), 1510-1514, 2014 | 4 | 2014 |
| Diamond superjunction (SJ) process development: super-lattice power amplifier with diamond enhanced superjunction (SPADES) S Afroz, B Novak, K Nagamatsu, K Frey, P Shea, R Howell, J Chang, ... 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and …, 2019 | 3 | 2019 |
| Activation of ion implanted Si in semi-insulating C-doped GaN by high pressure annealing for photoconductive semiconductor switch (PCSS) applications JC Gallagher, TJ Anderson, AD Koehler, GM Foster, AG Jacobs, ... Proceedings of the CS MANTECH 2019, 2019 | 2 | 2019 |
Andrew D. KoehlerNaval Research LaboratoryVerified email at nrl.navy.mil
