| Optical properties of pyrolytic boron nitride in the energy range 0.05—10 eV DM Hoffman, GL Doll, PC Eklund Physical review B 30 (10), 6051, 1984 | 339 | 1984 |
| Chemical vapor deposition of titanium, zirconium, and hafnium nitride thin films R Fix, RG Gordon, DM Hoffman Chemistry of materials 3 (6), 1138-1148, 1991 | 321 | 1991 |
| Perpendicular and parallel acetylene complexes DM Hoffman, R Hoffmann, CR Fisel Journal of the American Chemical Society 104 (14), 3858-3875, 1982 | 319 | 1982 |
| Synthesis of thin films by atmospheric pressure chemical vapor deposition using amido and imido titanium (IV) compounds as precursors RM Fix, RG Gordon, DM Hoffman Chemistry of Materials 2 (3), 235-241, 1990 | 280 | 1990 |
| Chemical vapor deposition of vanadium, niobium, and tantalum nitride thin films R Fix, RG Gordon, DM Hoffman Chemistry of materials 5 (5), 614-619, 1993 | 245 | 1993 |
| Chemical vapour deposition of nitride thin films DM Hoffman Polyhedron 13 (8), 1169-1179, 1994 | 206 | 1994 |
| Giant internal magnetic fields in Mn doped nanocrystal quantum dots DM Hoffman, BK Meyer, AI Ekimov, IA Merkulov, AL Efros, M Rosen, ... Solid state communications 114 (10), 547-550, 2000 | 174 | 2000 |
| Observations regarding the mechanism of olefin epoxidation with per acids H Kwart, DM Hoffman The Journal of Organic Chemistry 31 (2), 419-425, 1966 | 152 | 1966 |
| Process for chemical vapor deposition of transition metal nitrides RG Gordon, R Fix, D Hoffman US Patent 5,139,825, 1992 | 131 | 1992 |
| Isoelectronic molecules with triple bonds to metal atoms (M= Mo, W): crystal and molecular structures of tri-tert-butoxytungsten ethylidyne and nitride MH Chisholm, DM Hoffman, JC Huffman Inorganic Chemistry 22 (20), 2903-2906, 1983 | 131 | 1983 |
| Solution-phase reactivity as a guide to the low-temperature chemical vapor deposition of early-transition-metal nitride thin films RM Fix, RG Gordon, DM Hoffman Journal of the American Chemical Society 112 (21), 7833-7835, 1990 | 127 | 1990 |
| A-Frames DM Hoffman, R Hoffmann Inorganic Chemistry 20 (10), 3543-3555, 1981 | 125 | 1981 |
| Synthesis of homoleptic gallium alkoxide complexes and the chemical vapor deposition of gallium oxide films M Valet, DM Hoffman Chemistry of materials 13 (6), 2135-2143, 2001 | 114 | 2001 |
| Metal alkoxides: models for metal oxides. 4. Alkyne adducts of ditungsten hexaalkoxides and evidence for an equilibrium between dimetallatetrahedrane and methylidynemetal … MH Chisholm, K Folting, DM Hoffman, JC Huffman Journal of the American Chemical Society 106 (22), 6794-6805, 1984 | 112 | 1984 |
| Process for chemical vapor deposition of main group metal nitrides RG Gordon, D Hoffman, U Riaz US Patent 5,178,911, 1993 | 106 | 1993 |
| General synthesis of homoleptic indium alkoxide complexes and the chemical vapor deposition of indium oxide films S Suh, DM Hoffman Journal of the American Chemical Society 122 (39), 9396-9404, 2000 | 71 | 2000 |
| Silicon dimethylamido complexes and ammonia as precursors for the atmospheric pressure chemical vapor deposition of silicon nitride thin films RG Gordon, DM Hoffman, U Riaz Chemistry of Materials 2 (5), 480-482, 1990 | 71 | 1990 |
| Metal alkoxides: models for metal oxides. 7. Trinuclear and tetranuclear alkylidyne clusters of tungsten supported by alkoxide ligands MH Chisholm, K Folting, JA Heppert, DM Hoffman, JC Huffman Journal of the American Chemical Society 107 (5), 1234-1241, 1985 | 68* | 1985 |
| Chemical vapor deposition of aluminum and gallium nitride thin films from metalorganic precursors DM Hoffman, S Prakash Rangarajan, SD Athavale, DJ Economou, JR Liu, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 14 (2 …, 1996 | 65 | 1996 |
| Chemical vapor deposition of aluminum nitride thin films RG Gordon, U Riaz, DM Hoffman Journal of materials research 7 (7), 1679-1684, 1992 | 63 | 1992 |
