Jacob H. Leach
Jacob H. Leach
Kyma Technologies
Verified email at kymatech.com
Cited by
Cited by
Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges
JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ...
Advanced Electronic Materials 4 (1), 1600501, 2018
High electron mobility in nearly lattice-matched heterostructure field effect transistors
J Xie, X Ni, M Wu, JH Leach, Ü Özgür, H Morkoç
Applied Physics Letters 91 (13), 132116, 2007
Universal phonon mean free path spectra in crystalline semiconductors at high temperature
JP Freedman, JH Leach, EA Preble, Z Sitar, RF Davis, JA Malen
Scientific reports 3 (1), 1-6, 2013
The effect of AlN interlayer thicknesses on scattering processes in lattice-matched AlInN/GaN two-dimensional electron gas heterostructures
A Teke, S Gökden, R Tülek, JH Leach, Q Fan, J Xie, Ü Özgür, H Morkoç, ...
New Journal of Physics 11 (6), 063031, 2009
Hot-electron energy relaxation time in AlInN/AlN/GaN 2DEG channels
A Matulionis, J Liberis, E Šermukšnis, J Xie, JH Leach, M Wu, H Morkoç
Semiconductor science and technology 23 (7), 075048, 2008
Small signal equivalent circuit modeling for AlGaN/GaN HFET: Hybrid extraction method for determining circuit elements of AlGaN/GaN HFET
Q Fan, JH Leach, H Morkoc
Proceedings of the IEEE 98 (7), 1140-1150, 2010
Thermal properties of AlGaN/GaN HFETs on bulk GaN substrates
N Killat, M Montes, JW Pomeroy, T Paskova, KR Evans, J Leach, X Li, ...
IEEE Electron device letters 33 (3), 366-368, 2012
Electron mobility in InGaN channel heterostructure field effect transistor structures with different barriers
J Xie, JH Leach, X Ni, M Wu, R Shimada, Ü Özgür, H Morkoç
Applied Physics Letters 91 (26), 262102, 2007
Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons
JH Leach, CY Zhu, M Wu, X Ni, X Li, J Xie, Ü Özgür, H Morkoç, J Liberis, ...
Applied Physics Letters 95 (22), 223504, 2009
Plasmon-enhanced heat dissipation in GaN-based two-dimensional channels
A Matulionis, J Liberis, I Matulionienė, M Ramonas, E Šermukšnis, ...
Applied Physics Letters 95 (19), 192102, 2009
Status of reliability of GaN-based heterojunction field effect transistors
JH Leach, H Morkoc
Proceedings of the IEEE 98 (7), 1127-1139, 2010
Electron drift velocity in lattice-matched AlInN/AlN/GaN channel at high electric fields
L Ardaravičius, M Ramonas, J Liberis, O Kiprijanovič, A Matulionis, J Xie, ...
Journal of Applied Physics 106 (7), 073708, 2009
Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates
JH Leach, CY Zhu, M Wu, X Ni, X Li, J Xie, Ü Özgür, H Morkoç, J Liberis, ...
Applied Physics Letters 96 (13), 133505, 2010
Electrically and magnetically tunable phase shifters based on a barium strontium titanate-yttrium iron garnet layered structure
JH Leach, H Liu, V Avrutin, E Rowe, Ü Özgür, H Morkoc, YY Song, M Wu
Journal of Applied Physics 108 (6), 064106, 2010
The effect of hydrogen etching on studied by temperature-dependent current-voltage and atomic force microscopy
S Doğan, D Johnstone, F Yun, S Sabuktagin, J Leach, AA Baski, ...
Applied physics letters 85 (9), 1547-1549, 2004
Thermal conductivity of GaN, , and SiC from 150 K to 850 K
Q Zheng, C Li, A Rai, JH Leach, DA Broido, DG Cahill
Physical Review Materials 3 (1), 014601, 2019
Ti/Al/Ni/Au ohmic contacts for AlInN/AlN/GaN-based heterojunction field-effect transistors
L Zhou, JH Leach, X Ni, H Morkoç, DJ Smith
Journal of Applied Physics 107 (1), 014508, 2010
Effect of lattice mismatch on gate lag in high quality InAlN/AlN/GaN HFET structures
JH Leach, M Wu, X Ni, X Li, Ü Özgür, H Morkoç
physica status solidi (a) 207 (1), 211-216, 2010
InAlN‐barrier HFETs with GaN and InGaN channels
J Liberis, I Matulionienė, A Matulionis, E Šermukšnis, J Xie, JH Leach, ...
physica status solidi (a) 206 (7), 1385-1395, 2009
Low-frequency noise measurements of AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with HfAlO gate dielectric
C Kayis, JH Leach, CY Zhu, M Wu, X Li, Ü Ozgur, H Morkoc, X Yang, ...
IEEE electron device letters 31 (9), 1041-1043, 2010
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