| Bulk GaN flip-chip violet light-emitting diodes with optimized efficiency for high-power operation CA Hurni, A David, MJ Cich, RI Aldaz, B Ellis, K Huang, A Tyagi, ... Applied Physics Letters 106 (3), 2015 | 256 | 2015 |
| Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction R Yeluri, J Lu, CA Hurni, DA Browne, S Chowdhury, S Keller, JS Speck, ... Applied Physics Letters 106 (18), 2015 | 111 | 2015 |
| Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy DA Browne, EC Young, JR Lang, CA Hurni, JS Speck Journal of Vacuum Science & Technology A 30 (4), 2012 | 110 | 2012 |
| Quantum efficiency of III-nitride emitters: Evidence for defect-assisted nonradiative recombination and its effect on the green gap A David, NG Young, CA Hurni, MD Craven Physical Review Applied 11 (3), 031001, 2019 | 93 | 2019 |
| High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy JR Lang, CJ Neufeld, CA Hurni, SC Cruz, E Matioli, UK Mishra, JS Speck Applied Physics Letters 98 (13), 2011 | 87 | 2011 |
| Electrical properties of III-Nitride LEDs: Recombination-based injection model and theoretical limits to electrical efficiency and electroluminescent cooling A David, CA Hurni, NG Young, MD Craven Applied Physics Letters 109 (8), 2016 | 65 | 2016 |
| pn junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents CA Hurni, O Bierwagen, JR Lang, BM McSkimming, CS Gallinat, ... Applied Physics Letters 97 (22), 2010 | 57 | 2010 |
| Deep traps in nonpolar m-plane GaN grown by ammonia-based molecular beam epitaxy Z Zhang, CA Hurni, AR Arehart, J Yang, RC Myers, JS Speck, SA Ringel Applied Physics Letters 100 (5), 2012 | 50 | 2012 |
| High light extraction efficiency in bulk-GaN based volumetric violet light-emitting diodes A David, CA Hurni, RI Aldaz, MJ Cich, B Ellis, K Huang, FM Steranka, ... Applied Physics Letters 105 (23), 2014 | 46 | 2014 |
| Field-assisted Shockley-Read-Hall recombinations in III-nitride quantum wells A David, CA Hurni, NG Young, MD Craven Applied Physics Letters 111 (23), 2017 | 44 | 2017 |
| All-optical measurements of carrier dynamics in bulk-GaN LEDs: Beyond the ABC approximation A David, NG Young, CA Hurni, MD Craven Applied Physics Letters 110 (25), 2017 | 43 | 2017 |
| Effects of growth temperature on Mg-doped GaN grown by ammonia molecular beam epitaxy CA Hurni, JR Lang, PG Burke, JS Speck Applied Physics Letters 101 (10), 2012 | 41 | 2012 |
| Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown P-type gallium nitride as a current blocking layer S Chowdhury, R Yeluri, C Hurni, UK Mishra, I Ben-Yaacov US Patent 8,937,338, 2015 | 40 | 2015 |
| Carrier dynamics and Coulomb-enhanced capture in III-nitride quantum heterostructures A David, CA Hurni, NG Young, MD Craven Applied Physics Letters 109 (3), 2016 | 37 | 2016 |
| Molecular beam epitaxy of InAlN lattice-matched to GaN with homogeneous composition using ammonia as nitrogen source M Hoi Wong, F Wu, CA Hurni, S Choi, JS Speck, UK Mishra Applied Physics Letters 100 (7), 2012 | 37 | 2012 |
| Coherence in Y-coupled quantum cascade lasers LK Hoffmann, CA Hurni, S Schartner, M Austerer, E Mujagić, M Nobile, ... Applied Physics Letters 91 (16), 2007 | 33 | 2007 |
| Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures B Mazumder, MH Wong, CA Hurni, JY Zhang, UK Mishra, JS Speck Applied Physics Letters 101 (9), 2012 | 32 | 2012 |
| High-performance LED fabrication MJ Cich, AJF David, C Hurni, R Aldaz, MR Krames US Patent 9,583,678, 2017 | 26 | 2017 |
| Wavelength dependent phase locking in quantum cascade laser Y-junctions LK Hoffmann, CA Hurni, S Schartner, E Mujagić, AM Andrews, P Klang, ... Applied Physics Letters 92 (6), 2008 | 20 | 2008 |
| Influence of V/III growth flux ratio on trap states in m-plane GaN grown by ammonia-based molecular beam epitaxy Z Zhang, CA Hurni, AR Arehart, JS Speck, SA Ringel Applied Physics Letters 101 (15), 2012 | 18 | 2012 |
Jordan R. LangStaff Scientist, Solar JunctionVerified email at sj-solar.com
