| finFET drive strength modification T Merelle, G Doornbos, RJP Lander US Patent 8,283,231, 2012 | 90 | 2012 |
| Criterion for SEU occurrence in SRAM deduced from circuit and device simulations in case of neutron-induced SER T Merelle, H Chabane, JM Palau, K Castellani-Coulie, F Wrobel, F Saigné, ... IEEE transactions on nuclear science 52 (4), 1148-1155, 2005 | 80 | 2005 |
| Monte-Carlo simulations to quantify neutron-induced multiple bit upsets in advanced SRAMs T Mérelle, F Saigné, B Sagnes, G Gasiot, P Roche, T Carriere, MC Palau, ... IEEE Transactions on Nuclear Science 52 (5), 1538-1544, 2005 | 48 | 2005 |
| Device having self-assembled-monolayer T Merelle, MHA Lambert, F Frederix US Patent App. 13/378,302, 2012 | 44 | 2012 |
| Matching performance of FinFET devices with fin widths down to 10 nm P Magnone, A Mercha, V Subramanian, P Parvais, N Collaert, M Dehan, ... IEEE electron device letters 30 (12), 1374-1376, 2009 | 43 | 2009 |
| CMOS biosensor platform F Widdershoven, D Van Steenwinckel, J Überfeld, T Merelle, H Suy, ... 2010 International Electron Devices Meeting, 36.1. 1-36.1. 4, 2010 | 38 | 2010 |
| First observation of FinFET specific mismatch behavior and optimization guidelines for SRAM scaling T Merelle, G Curatola, A Nackaerts, N Collaert, MJH Van Dal, G Doornbos, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 31 | 2008 |
| Quantified insights into LED variability R Bornoff, T Mérelle, J Sari, A Di Bucchianico, G Farkas 2018 24rd International Workshop on Thermal Investigations of ICs and …, 2018 | 25 | 2018 |
| Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices L Pelaz, R Duffy, M Aboy, L Marques, P Lopez, I Santos, BJ Pawlak, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 21 | 2008 |
| Inter Laboratory Comparison of LED Measurements Aimed as Input for Multi-Domain Compact Model Development within a European-wide R&D Project A Poppe, G Farkas, F Szabó, J Joly, J Thomé, J Yu, K Bosschaartl, ... Proceedings of the Conference on “Smarter Lighting for Better Life” at the …, 2017 | 17 | 2017 |
| Charge sharing study in the case of neutron induced SEU on 130 nm bulk SRAM modeled by 3-D device simulation T Merelle, S Serre, F Saigné, B Sagnes, G Gasiot, P Roche, T Carriere, ... IEEE transactions on nuclear science 53 (4), 1897-1901, 2006 | 14 | 2006 |
| Modeling and quantifying LED variability T Mérelle, R Bornoff, G Onushkin, L Gaál, G Farkas, A Poppe, G Hantos, ... Proceedings of the 2018 LED Professional Symposium (LpS2018), Bregenz …, 2018 | 10 | 2018 |
| FinFET drive strength modification T Merelle, G Doornbos, RJP Lander US Patent 8,779,527, 2014 | 10 | 2014 |
| Determination of the deposited energy in a silicon volume by nuclear interaction H Chabane, JR Vaillé, T Mérelle, F Saigné, L Dusseau, M Dumas, ... Journal of applied physics 99 (12), 124916, 2006 | 8 | 2006 |
| Delphi4LED: LED measurements and variability analysis J Sari, T Mérelle, A Di Bucchianico, D Breton 2017 23rd International Workshop on Thermal Investigations of ICs and …, 2017 | 7 | 2017 |
| FinFET drive strength modification T Merelle, G Doornbos, RJ Lander US Patent 9,048,122, 2015 | 6 | 2015 |
| Technical Digest-International Electron Devices Meeting L Pelaz, R Duffy, M Aboy, L Marques, P Lopez, I Santos, BJ Pawlak, ... IEDM, art, 2008 | 6 | 2008 |
| Alpha induced SEU and MBU rates evaluation for advanced srams by monte-carlo simulations T Merelle, F Saigné, B Sagnes, G Gasiot, P Roche, T Carriere, MC Palau 2005 8th European Conference on Radiation and Its Effects on Components and …, 2005 | 6 | 2005 |
| Does a single LED bin really represent a single LED type T Mérelle, J Sari, A Di Bucchianico, G Onushkin, R Bornoff, G Farkas, ... Proceedings of the CIE, 2019 | 5 | 2019 |
| Inter Laboratory Comparison of LED Measurements Aimed as Input for Multi-Domain Compact Model Development within the Delphi4LED H2020 Project A Poppe, G Hantos, G Farkas, F Szabó, J Joly, J Thomé, J Yu, ... Proceedings of Lux Europa 2017, 2017 | 5 | 2017 |
