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Shyam Bharadwaj
Shyam Bharadwaj
PhD student, Cornell University
Verified email at cornell.edu
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Cited by
Cited by
Year
MBE-grown 232–270 nm deep-UV LEDs using monolayer thin binary GaN/AlN quantum heterostructures
SM Islam, K Lee, J Verma, V Protasenko, S Rouvimov, S Bharadwaj, ...
Applied Physics Letters 110 (4), 2017
1262017
Inactivation of Listeria and E. coli by Deep-UV LED: effect of substrate conditions on inactivation kinetics
Y Cheng, H Chen, LA Sánchez Basurto, VV Protasenko, S Bharadwaj, ...
Scientific reports 10 (1), 3411, 2020
652020
GaN/AlN quantum-disk nanorod 280 nm deep ultraviolet light emitting diodes by molecular beam epitaxy
T Wei, SM Islam, U Jahn, J Yan, K Lee, S Bharadwaj, X Ji, J Wang, J Li, ...
Optics Letters 45 (1), 121-124, 2020
342020
GaN/AlN Schottky-gate p-channel HFETs with InGaN contacts and 100 mA/mm on-current
SJ Bader, R Chaudhuri, A Hickman, K Nomoto, S Bharadwaj, HW Then, ...
2019 IEEE International Electron Devices Meeting (IEDM), 4.5. 1-4.5. 4, 2019
292019
Polarization control in nitride quantum well light emitters enabled by bottom tunnel-junctions
H Turski, S Bharadwaj, HG Xing, D Jena
Journal of Applied Physics 125 (20), 2019
292019
Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes
S Bharadwaj, J Miller, K Lee, J Lederman, M Siekacz, HG Xing, D Jena, ...
Optics Express 28 (4), 4489-4500, 2020
242020
Light-emitting diodes with AlN polarization-induced buried tunnel junctions: A second look
K Lee, S Bharadwaj, YT Shao, L van Deurzen, V Protasenko, DA Muller, ...
Applied Physics Letters 117 (6), 2020
162020
Nitride LEDs and lasers with buried tunnel junctions
H Turski, M Siekacz, G Muzioł, M Hajdel, S Stańczyk, M Żak, M Chlipała, ...
ECS Journal of Solid State Science and Technology 9 (1), 015018, 2019
142019
Bandgap narrowing and Mott transition in Si-doped Al0. 7Ga0. 3N
S Bharadwaj, SM Islam, K Nomoto, V Protasenko, A Chaney, HG Xing, ...
Applied Physics Letters 114 (11), 2019
142019
Enhancing wall-plug efficiency for deep-UV light-emitting diodes: From crystal growth to devices
SM Islam, V Protasenko, S Bharadwaj, J Verma, K Lee, H Xing, D Jena
Light-Emitting Diodes: Materials, Processes, Devices and Applications, 337-395, 2019
82019
Bottom tunnel junction blue light-emitting field-effect transistors
S Bharadwaj, K Lee, K Nomoto, A Hickman, L van Deurzen, V Protasenko, ...
Applied Physics Letters 117 (3), 2020
72020
Dislocation and indium droplet related emission inhomogeneities in InGaN LEDs
L van Deurzen, MG Ruiz, K Lee, H Turski, S Bharadwaj, R Page, ...
Journal of Physics D: Applied Physics 54 (49), 495106, 2021
62021
Blue (In, Ga) N light-emitting diodes with buried n+–p+ tunnel junctions by plasma-assisted molecular beam epitaxy
YJ Cho, S Bharadwaj, Z Hu, K Nomoto, U Jahn, HG Xing, D Jena
Japanese Journal of Applied Physics 58 (6), 060914, 2019
62019
Wide-bandgap Gallium Nitride p-channel MISFETs with enhanced performance at high temperature
K Nomoto, SJ Bader, K Lee, S Bharadwaj, Z Hu, HG Xing, D Jena
2017 75th Annual Device Research Conference (DRC), 1-2, 2017
62017
Highly linear and efficient mm-Wave GaN HEMTs and MMICs
J Moon, B Grabar, J Wong, J Tai, E Arkun, DV Morales, C Dao, ...
2022 IEEE/MTT-S International Microwave Symposium-IMS 2022, 302-304, 2022
52022
Efficient InGaN p-contacts for deep-UV light emitting diodes
K Lee, S Bharadwaj, V Protasenko, H Xing, D Jena
2019 Device Research Conference (DRC), 171-172, 2019
42019
Enhanced efficiency in bottom tunnel junction InGaN blue LEDs
L van Deurzen, S Bharadwaj, K Lee, V Protasenko, H Turski, HG Xing, ...
Light-Emitting Devices, Materials, and Applications XXV 11706, 30-35, 2021
32021
Monolithically p-down nitride laser diodes and LEDs obtained by MBE using buried tunnel junction design
H Turski, S Bharadwaj, M Siekacz, G Muziol, M Chlipala, M Zak, M Hajdel, ...
Gallium Nitride Materials and Devices XV 11280, 111-116, 2020
32020
High-temperature p-type polarization doped AlGaN cladding for sub-250 nm deep-UV quantum well LEDs by MBE
S Bharadwaj, SM Islam, K Lee, A Devine, V Protasenko, S Rouvimov, ...
2017 75th Annual Device Research Conference (DRC), 1-2, 2017
22017
Tunnel-junction p-contact sub-250 nm deep-UV LEDs
S Bharadwaj, K Lee, SM Islam, V Protasenko, HG Xing, D Jena
2017 Conference on Lasers and Electro-Optics (CLEO), 1-2, 2017
22017
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