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Sergey Kukushkin
Sergey Kukushkin
Институт проблем машиноведения РАН
Verified email at mail.ioffe.ru
Title
Cited by
Cited by
Year
Theory and practice of SiC growth on Si and its applications to wide-gap semiconductor films
SA Kukushkin, AV Osipov
Journal of Physics D: Applied Physics 47 (31), 313001, 2014
2392014
Substrates for epitaxy of gallium nitride: new materials and techniques
SA Kukushkin, AV Osipov, VN Bessolov, BK Medvedev, VK Nevolin, ...
Rev. Adv. Mater. Sci 17 (1), 1-32, 2008
2202008
New phase formation on solid surfaces and thin film condensation
SA Kukushkin, AV Osipov
Progress in surface science 51 (1), 1-107, 1996
1591996
Thin-film condensation processes
SA Kukushkin, AV Osipov
Physics-Uspekhi 41 (10), 983, 1998
1421998
A new method for the synthesis of epitaxial layers of silicon carbide on silicon owing to formation of dilatation dipoles
SA Kukushkin, AV Osipov
Journal of Applied Physics 113 (2), 024909, 2013
1292013
Synthesis of epitaxial silicon carbide films through the substitution of atoms in the silicon crystal lattice: A review
SA Kukushkin, AV Osipov, NA Feoktistov
Physics of the Solid State 56, 1507-1535, 2014
1282014
Processes of condensation of thin films
SA Kukushkin, AV Osipov
Usp. Fiz. Nauk 168 (10), 1083-1115, 1998
1221998
Processes of condensation of thin films
SA Kukushkin, AV Osipov
Usp. Fiz. Nauk 168 (10), 1083-1115, 1998
1221998
New method for growing silicon carbide on silicon by solid-phase epitaxy: Model and experiment
SA Kukushkin, AV Osipov
Physics of the Solid State 50, 1238-1245, 2008
1162008
Stress-driven nucleation of coherent islands: theory and experiment
AV Osipov, F Schmitt, SA Kukushkin, P Hess
Applied surface science 188 (1-2), 156-162, 2002
1142002
Epitaxial growth of zinc oxide by the method of atomic layer deposition on SiC/Si substrates
SA Kukushkin, AV Osipov, AI Romanychev
Physics of the solid state 58, 1448-1452, 2016
972016
Kinetic model of coherent island formation in the case of self-limiting growth
AV Osipov, SA Kukushkin, F Schmitt, P Hess
Physical Review B 64 (20), 205421, 2001
792001
Raman investigation of different polytypes in SiC thin films grown by solid-gas phase epitaxy on Si (111) and 6H-SiC substrates
J Wasyluk, TS Perova, SA Kukushkin, AV Osipov, NA Feoktistov, ...
Materials science forum 645, 359-362, 2010
712010
Micro-raman mapping of 3c-sic thin films grown by solid–gas phase epitaxy on si (111)
TS Perova, J Wasyluk, SA Kukushkin, AV Osipov, NA Feoktistov, ...
Nanoscale research letters 5, 1507-1511, 2010
602010
Evolution processes in multicomponent and multiphase films
SA Kukushkin
Thin Solid Films 207 (1-2), 302-312, 1992
501992
Disperse Systems on Solid Surfaces
SA Kukushkin, VV Slezov
Mechanisms of Formation of Thin Films (Evolutionary Approach), 1996
451996
First-order phase transition through an intermediate state
SA Kukushkin, AV Osipov
Physics of the Solid State 56, 792-800, 2014
442014
Nucleation of pores in brittle solids under load
SA Kukushkin
Journal of applied physics 98 (3), 033503, 2005
422005
Semipolar gallium nitride on silicon: Technology and properties.
VN Bessolov, EV Konenkova, SA Kukushkin, AV Osipov, SN Rodin
Reviews on Advanced Materials Science 38 (1), 2014
402014
Electron-microscopic investigation of a SiC/Si (111) structure obtained by solid phase epitaxy
LM Sorokin, NV Veselov, MP Shcheglov, AE Kalmykov, AA Sitnikova, ...
Technical Physics Letters 34, 992-994, 2008
402008
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