| 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers M Tang, S Chen, J Wu, Q Jiang, VG Dorogan, M Benamara, YI Mazur, ... Optics express 22 (10), 11528-11535, 2014 | 176 | 2014 |
| Intersublevel infrared photodetector with strain-free GaAs quantum dot pairs grown by high-temperature droplet epitaxy J Wu, D Shao, VG Dorogan, AZ Li, S Li, EA DeCuir Jr, MO Manasreh, ... Nano letters 10 (4), 1512-1516, 2010 | 128 | 2010 |
| Aharonov-Bohm interference in neutral excitons: effects of built-in electric fields MD Teodoro, VL Campo Jr, V Lopez-Richard, E Marega Jr, GE Marques, ... Physical review letters 104 (8), 086401, 2010 | 101 | 2010 |
| 1.3 μm InAs/GaAs quantum‐dot laser monolithically grown on Si substrates operating over 100° C SM Chen, MC Tang, J Wu, Q Jiang, VG Dorogan, M Benamara, YI Mazur, ... Electronics Letters 50 (20), 1467-1468, 2014 | 96 | 2014 |
| InAs/GaAs quantum-dot superluminescent light-emitting diode monolithically grown on a Si substrate S Chen, M Tang, Q Jiang, J Wu, VG Dorogan, M Benamara, YI Mazur, ... Acs Photonics 1 (7), 638-642, 2014 | 75 | 2014 |
| Voltage recovery in charged InAs/GaAs quantum dot solar cells P Lam, S Hatch, J Wu, M Tang, VG Dorogan, YI Mazur, GJ Salamo, ... Nano Energy 6, 159-166, 2014 | 70 | 2014 |
| Strain-free ring-shaped nanostructures by droplet epitaxy for photovoltaic application J Wu, ZM Wang, VG Dorogan, S Li, Z Zhou, H Li, J Lee, ES Kim, YI Mazur, ... Applied Physics Letters 101 (4), 2012 | 70 | 2012 |
| Effects of AlGaAs energy barriers on InAs/GaAs quantum dot solar cells KA Sablon, JW Little, KA Olver, ZM Wang, VG Dorogan, YI Mazur, ... Journal of Applied Physics 108 (7), 2010 | 55 | 2010 |
| Tuning quantum dot luminescence below the bulk band gap using tensile strain PJ Simmonds, CD Yerino, M Sun, B Liang, DL Huffaker, VG Dorogan, ... ACS nano 7 (6), 5017-5023, 2013 | 42 | 2013 |
| Effects of spatial confinement and layer disorder in photoluminescence of GaAs1− xBix/GaAs heterostructures YI Mazur, VG Dorogan, M Benamara, ME Ware, M Schmidbauer, ... Journal of Physics D: Applied Physics 46 (6), 065306, 2013 | 36 | 2013 |
| Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: optical determination of carrier concentration JA Steele, RA Lewis, M Henini, OM Lemine, D Fan, YI Mazur, ... Optics express 22 (10), 11680-11689, 2014 | 35 | 2014 |
| Band Alignment Tailoring of InAs1−xSbx/GaAs Quantum Dots: Control of Type I to Type II Transition J He, CJ Reyner, BL Liang, K Nunna, DL Huffaker, N Pavarelli, ... Nano letters 10 (8), 3052-3056, 2010 | 34 | 2010 |
| Measurement of coherent tunneling between InGaAs quantum wells and InAs quantum dots using photoluminescence spectroscopy YI Mazur, VG Dorogan, D Guzun, E Marega Jr, GJ Salamo, GG Tarasov, ... Physical Review B 82 (15), 155413, 2010 | 33 | 2010 |
| Coexistence of type-I and type-II band alignments in antimony-incorporated InAsSb quantum dot nanostructures YI Mazur, VG Dorogan, GJ Salamo, GG Tarasov, BL Liang, CJ Reyner, ... Applied Physics Letters 100 (3), 2012 | 31 | 2012 |
| Tunneling-barrier controlled excitation transfer in hybrid quantum dot-quantum well nanostructures YI Mazur, VG Dorogan, E Marega, ZY Zhuchenko, ME Ware, M Benamara, ... Journal of Applied Physics 108 (7), 2010 | 28 | 2010 |
| Mechanisms of interdot coupling in (In, Ga) As/GaAs quantum dot arrays YI Mazur, VG Dorogan, E Marega, GG Tarasov, DF Cesar, ... Applied Physics Letters 94 (12), 2009 | 28 | 2009 |
| MBE grown GaAsBi/GaAs double quantum well separate confinement heterostructures D Fan, PC Grant, SQ Yu, VG Dorogan, X Hu, Z Zeng, C Li, ME Hawkridge, ... Journal of Vacuum Science & Technology B 31 (3), 2013 | 27 | 2013 |
| Si-doped InAs/GaAs quantum-dot solar cell with AlAs cap layers D Kim, M Tang, J Wu, S Hatch, Y Maidaniuk, V Dorogan, YI Mazur, ... IEEE Journal of Photovoltaics 6 (4), 906-911, 2016 | 26 | 2016 |
| InAs/InGaP quantum dot solar cells with an AlGaAs interlayer P Lam, J Wu, M Tang, D Kim, S Hatch, I Ramiro, VG Dorogan, ... Solar Energy Materials and Solar Cells 144, 96-101, 2016 | 26 | 2016 |
| Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains SV Kondratenko, OV Vakulenko, YI Mazur, VG Dorogan, E Marega, ... Journal of Applied Physics 116 (19), 2014 | 25 | 2014 |
Gregory SalamoProfessor of Physics, University of ArkansasVerified email at uark.edu
