| High power LEDs–technology status and market applications FM Steranka, J Bhat, D Collins, L Cook, MG Craford, R Fletcher, ... physica status solidi (a) 194 (2), 380-388, 2002 | 319 | 2002 |
| Indium gallium nitride smoothing structures for III-nitride devices WK Goetz, MD Camras, NF Gardner, RS Kern, AY Kim, SA Stockman US Patent 6,635,904, 2003 | 292 | 2003 |
| Indium gallium nitride smoothing structures for III-nitride devices WK Goetz, MD Camras, NF Gardner, RS Kern, AY Kim, SA Stockman US Patent 6,489,636, 2002 | 230 | 2002 |
| Performance of high‐power III‐nitride light emitting diodes G Chen, M Craven, A Kim, A Munkholm, S Watanabe, M Camras, W Götz, ... physica status solidi (a) 205 (5), 1086-1092, 2008 | 198 | 2008 |
| Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes YC Shen, JJ Wierer, MR Krames, MJ Ludowise, MS Misra, F Ahmed, ... Integrated Optoelectronic Devices 2004, 20-25, 2004 | 186 | 2004 |
| Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes YC Shen, JJ Wierer, MR Krames, MJ Ludowise, MS Misra, F Ahmed, ... Applied physics letters 82 (14), 2221-2223, 2003 | 183 | 2003 |
| Dislocation dynamics in relaxed graded composition semiconductors EA Fitzgerald, AY Kim, MT Currie, TA Langdo, G Taraschi, MT Bulsara Materials Science and Engineering: B 67 (1), 53-61, 1999 | 174 | 1999 |
| Performance of high-power AlInGaN light emitting diodes AY Kim, W Götz, DA Steigerwald, JJ Wierer, NF Gardner, J Sun, ... physica status solidi(a) 188 (1), 15-21, 2001 | 171 | 2001 |
| Dislocation glide and blocking kinetics in compositionally graded SiGe/Si CW Leitz, MT Currie, AY Kim, J Lai, E Robbins, EA Fitzgerald, MT Bulsara Journal of Applied Physics 90 (6), 2730-2736, 2001 | 116 | 2001 |
| Local indium segregation and bang gap variations in high efficiency green light emitting InGaN/GaN diodes JR Jinschek, R Erni, NF Gardner, AY Kim, C Kisielowski Solid state communications 137 (4), 230-234, 2006 | 76 | 2006 |
| Local indium segregation and band structure in high efficiency green light emitting InGaN/GaN diodes JR Jinschek, R Erni, NF Gardner, AY Kim, C Kisielowski Lawrence Berkeley National Laboratory, 2004 | 76* | 2004 |
| Method of producing device quality (Al) InGaP alloys on lattice-mismatched substrates AY Kim, EA Fitzgerald US Patent 6,805,744, 2004 | 73 | 2004 |
| III-Nitride light emitting devices with low driving voltage W Goetz, NF Gardner, RS Kern, AY Kim, A Munkholm, SA Stockman, ... US Patent 6,630,692, 2003 | 68 | 2003 |
| Evolution of microstructure and dislocation dynamics in graded buffers grown on GaP by metalorganic vapor phase epitaxy: Engineering device-quality … AY Kim, WS McCullough, EA Fitzgerald Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1999 | 67 | 1999 |
| Growth of III-nitride light emitting devices on textured substrates AY Kim, SA Maranowski US Patent 7,633,097, 2009 | 41 | 2009 |
| Green phosphor-converted LED R Mueller-Mach, GO Mueller, TA Trottier, MR Krames, A Kim, ... International Symposium on Optical Science and Technology, 131-136, 2002 | 29 | 2002 |
| Current dependence of in-plane electroluminescence distribution of InxGa1-xN/GaN multiple quantum well light emitting diodes H Itoh, S Watanabe, M Goto, N Yamada, M Misra, AY Kim, SA Stockman Japanese journal of applied physics 42 (10B), L1244, 2003 | 24 | 2003 |
| Letters-Semiconductors-Current Dependence of In-Plane Electroluminescence Distribution of InxGa1-xN/GaN Multiple Quantum Well Light Emitting Diodes H Itoh, S Watanabe, M Goto, N Yamada, M Misra, AY Kim, SA Stockman Japanese Journal of Applied Physics-Part 2 Letters 42 (10), L1244, 2003 | 24* | 2003 |
| Microstructural defects in metalorganic vapor phase epitaxy of relaxed, graded InGaP: Branch defect origins and engineering LM McGill, EA Fitzgerald, AY Kim, JW Huang, SS Yi, PN Grillot, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004 | 16 | 2004 |
| Visible light-emitting diodes grown on optimized∇ x [InxGa1− x] P/GaP epitaxial transparent substrates with controlled dislocation density AY Kim, ME Groenert, EA Fitzgerald Journal of electronic materials 29 (8), L9-L12, 2000 | 12 | 2000 |
E A FitzgeraldCornell, ATT, MIT, Massachusetts Institute of Technology, NTUVerified email at mit.edu
