Prof. Mantu Hudait
Prof. Mantu Hudait
Assoc. Prof. of ECE, Virginia Tech; Past: Intel Corporation, Ohio State U, IISc-Bangalore, IIT-KGP
Verified email at - Homepage
Cited by
Cited by
Advanced high-K gate dielectric for high-performance short-channel In< inf> 0.7</inf> Ga< inf> 0.3</inf> As quantum well field effect transistors on silicon substrate for low …
M Radosavljevic, B Chu-Kung, S Corcoran, G Dewey, MK Hudait, ...
Electron Devices Meeting (IEDM), 2009 IEEE International, 1-4, 2009
Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures
MK Hudait, P Venkateswarlu, SB Krupanidhi
Solid-State Electronics 45 (1), 133-141, 2001
Effects of thin oxide in metal–semiconductor and metal–insulator–semiconductor epi-GaAs Schottky diodes
MK Hudait, SB Krupanidhi
Solid-State Electronics 44 (6), 1089-1097, 2000
Germanium based field-effect transistors: Challenges and opportunities
PS Goley, MK Hudait
Materials 7 (3), 2301-2339, 2014
Single‐junction InGaP/GaAs solar cells grown on Si substrates with SiGe buffer layers
SA Ringel, JA Carlin, CL Andre, MK Hudait, M Gonzalez, DM Wilt, ...
Progress in Photovoltaics: Research and Applications 10 (6), 417-426, 2002
Doping dependence of the barrier height and ideality factor of Au/n-GaAs Schottky diodes at low temperatures
MK Hudait, SB Krupanidhi
Physica B: Condensed Matter 307 (1-4), 125-137, 2001
Ultrahigh-Speed 0.5 V Supply Voltage In< sub> 0.7</sub> Ga< sub> 0.3</sub> As Quantum-Well Transistors on Silicon Substrate
S Datta, G Dewey, JM Fastenau, MK Hudait, D Loubychev, WK Liu, ...
Electron Device Letters, IEEE 28 (8), 685-687, 2007
High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC= 0.5 V) logic applications
M Radosavljevic, T Ashley, A Andreev, SD Coomber, G Dewey, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
A Ali, HS Madan, AP Kirk, DA Zhao, DA Mourey, MK Hudait, RM Wallace, ...
Applied Physics Letters 97 (14), 2010
The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition< equation>< font face='verdana'> Al</font>< sub> 2 …
HD Trinh, EY Chang, PW Wu, YY Wong, CT Chang, YF Hsieh, CC Yu, ...
Applied Physics Letters 97 (4), 042903-042903-3, 2010
Group III-V devices with delta-doped layer under channel region
MK Hudait, PG Tolchinsky, RS Chau, M Radosavljevic, R Pillarisetty, ...
US Patent App. 12/316,878, 2010
Interface states density distribution in Au/n-GaAs Schottky diodes on n-Ge and n-GaAs substrates
MK Hudait, SB Krupanidhi
Materials Science and Engineering: B 87 (2), 141-147, 2001
Heterogeneous integration of enhancement mode in0.7ga0.3as quantum well transistor on silicon substrate using thin (les 2 μm) composite buffer architecture for high-speed and …
MK Hudait, G Dewey, S Datta, JM Fastenau, J Kavalieros, WK Liu, ...
Electron Devices Meeting (IEDM), 2007 IEEE International, 625-628, 2007
Barrier-Engineered Arsenide–Antimonide Heterojunction Tunnel FETs With Enhanced Drive Current
D Mohata, B Rajamohanan, T Mayer, M Hudait, J Fastenau, D Lubychev, ...
IEEE Electron Device Letters 33 (11), 1568-1570, 2012
III–V multijunction solar cell integration with silicon: Present status, challenges and future outlook
N Jain, MK Hudait
Energy Harvesting and Systems 1 (3-4), 121-145, 2014
Control of oxygen vacancies and Ce+3 concentrations in doped ceria nanoparticles via the selection of lanthanide element
N Shehata, K Meehan, M Hudait, N Jain
Journal of Nanoparticle Research 14, 1-10, 2012
Effect of twinning on the photoluminescence and photoelectrochemical properties of indium phosphide nanowires grown on silicon (111)
RL Woo, R Xiao, Y Kobayashi, L Gao, N Goel, MK Hudait, TE Mallouk, ...
Nano letters 8 (12), 4664-4669, 2008
Modulation-doped multi-gate devices
MK Hudait, R Pillarisetty, M Radosavljevic, G Dewey, JT Kavalieros
US Patent 8,120,063, 2012
Anomalous current transport in Au/low-doped n-GaAs Schottky barrier diodes at low temperatures
S Hardikar, MK Hudait, P Modak, SB Krupanidhi, N Padha
Applied Physics A 68, 49-55, 1999
Carrier transport in high-mobility III–V quantum-well transistors and performance impact for high-speed low-power logic applications
G Dewey, MK Hudait, K Lee, R Pillarisetty, W Rachmady, M Radosavljevic, ...
IEEE electron device letters 29 (10), 1094-1097, 2008
The system can't perform the operation now. Try again later.
Articles 1–20