High temperature superconductor terahertz emitters: Fundamental physics and its applications T Kashiwagi, M Tsujimoto, T Yamamoto, H Minami, K Yamaki, ...
Japanese Journal of Applied Physics 51 (1R), 010113, 2011
138 2011 Tunable terahertz emission from the intrinsic Josephson junctions in acute isosceles triangular Bi2 Sr2 CaCu2 O8+δ mesas K Delfanazari, H Asai, M Tsujimoto, T Kashiwagi, T Kitamura, ...
Optics Express 21 (2), 2171-2184, 2013
74 2013 Three-dimensional numerical analysis of terahertz radiation emitted from intrinsic Josephson junctions with hot spots H Asai, M Tachiki, K Kadowaki
Physical review B 85 (6), 064521, 2012
49 2012 Quantum terahertz electronics (QTE) using coherent radiation from high temperature superconducting Bi2Sr2CaCu2O8+ δ intrinsic Josephson junctions K Kadowaki, M Tsujimoto, K Delfanazari, T Kitamura, M Sawamura, ...
Physica C: Superconductivity 491, 2-6, 2013
43 2013 Intense terahertz emission from intrinsic Josephson junctions by external heat control H Asai, S Kawabata
Applied Physics Letters 104 (11), 2014
41 2014 Effect of Bias Electrode Position on Terahertz Radiation From Pentagonal Mesas of Superconducting K Delfanazari, H Asai, M Tsujimoto, T Kashiwagi, T Kitamura, ...
IEEE transactions on terahertz science and technology 5 (3), 505-511, 2015
34 2015 Terahertz oscillating devices based upon the intrinsic Josephson junctions in a high temperature superconductor K Delfanazari, H Asai, M Tsujimoto, T Kashiwagi, T Kitamura, K Ishida, ...
Journal of Infrared, Millimeter, and Terahertz Waves 35, 131-146, 2014
31 2014 Perspective of negative capacitance FinFETs investigated by transient TCAD simulation H Ota, K Fukuda, T Ikegami, J Hattori, H Asai, S Migita, A Toriumi
2017 IEEE International Electron Devices Meeting (IEDM), 15.2. 1-15.2. 4, 2017
29 2017 Study of coherent and continuous terahertz wave emission in equilateral triangular mesas of superconducting Bi2Sr2CaCu2O8+ δ intrinsic Josephson junctions K Delfanazari, H Asai, M Tsujimoto, T Kashiwagi, T Kitamura, ...
Physica C: Superconductivity 491, 16-19, 2013
29 2013 Proposal of terahertz patch antenna fed by intrinsic Josephson junctions H Asai, M Tachiki, K Kadowaki
Applied physics letters 101 (11), 2012
25 2012 A TCAD device simulator for exotic materials and its application to a negative-capacitance FET T Ikegami, K Fukuda, J Hattori, H Asai, H Ota
Journal of Computational Electronics 18, 534-542, 2019
22 2019 Fringing field effects in negative capacitance field-effect transistors with a ferroelectric gate insulator J Hattori, K Fukuda, T Ikegami, H Ota, S Migita, H Asai, A Toriumi
Japanese Journal of Applied Physics 57 (4S), 04FD07, 2018
19 2018 Effects of lasing in a one-dimensional quantum metamaterial H Asai, S Savel'ev, S Kawabata, AM Zagoskin
Physical Review B 91 (13), 134513, 2015
19 2015 Multidomain dynamics of ferroelectric polarization and its coherency-breaking in negative capacitance field-effect transistors H Ota, T Ikegami, K Fukuda, J Hattori, H Asai, K Endo, S Migita, A Toriumi
2018 IEEE International Electron Devices Meeting (IEDM), 9.1. 1-9.1. 4, 2018
13 2018 Control of circularly polarized THz wave from intrinsic Josephson junctions by local heating H Asai, S Kawabata
Applied Physics Letters 110 (13), 2017
13 2017 Effects of magnetic fields on the coherent THz emission from mesas of single crystal Bi2Sr2CaCu2O8+ δ T Kitamura, T Kashiwagi, M Tsujimoto, K Delfanazari, M Sawamura, ...
Physica C: Superconductivity 494, 117-120, 2013
13 2013 Theory of macroscopic quantum tunneling with Josephson-Leggett collective excitations in multiband superconducting Josephson junctions H Asai, Y Ota, S Kawabata, M Machida, F Nori
Physical Review B 89 (22), 224507, 2014
12 2014 Experimental and theoretical studies of mesas of several geometries for terahertz wave radiation from the intrinsic Josephson junctions in superconducting Bi2 Sr2 CaCu2 O … K Delfanazari, H Asai, M Tsujimoto, T Kashiwagi, T Kitamura, ...
2012 37th International Conference on Infrared, Millimeter, and Terahertz …, 2012
11 2012 Demonstrating performance improvement of complementary TFET circuits by Ion enhancement based on isoelectronic trap technology T Mori, H Asai, J Hattori, K Fukuda, S Otsuka, Y Morita, S O'uchi, H Fuketa, ...
2016 IEEE International Electron Devices Meeting (IEDM), 19.4. 1-19.4. 4, 2016
10 2016 Steep switching less than 15 mV dec− 1 in silicon-on-insulator tunnel FETs by a trimmed-gate structure H Asai, T Mori, T Matsukawa, J Hattori, K Endo, K Fukuda
Japanese Journal of Applied Physics 58 (SB), SBBA16, 2019
9 2019