| Silicon-based visible light-emitting devices integrated into microelectronic circuits KD Hirschman, L Tsybeskov, SP Duttagupta, PM Fauchet Nature 384 (6607), 338-341, 1996 | 1104 | 1996 |
| Nanocrystalline-silicon superlattice produced by controlled recrystallization L Tsybeskov, KD Hirschman, SP Duttagupta, M Zacharias, PM Fauchet, ... Applied Physics Letters 72 (1), 43-45, 1998 | 352 | 1998 |
| Thermal crystallization of amorphous superlattices M Zacharias, J Bläsing, P Veit, L Tsybeskov, K Hirschman, PM Fauchet Applied physics letters 74 (18), 2614-2616, 1999 | 234 | 1999 |
| Stable and efficient electroluminescence from a porous silicon‐based bipolar device L Tsybeskov, SP Duttagupta, KD Hirschman, PM Fauchet Applied physics letters 68 (15), 2058-2060, 1996 | 229 | 1996 |
| A three‐dimensional porous silicon p–n diode for betavoltaics and photovoltaics W Sun, NP Kherani, KD Hirschman, LL Gadeken, PM Fauchet Advanced Materials 17 (10), 1230-1233, 2005 | 205 | 2005 |
| Carrier transport in porous silicon light‐emitting devices C Peng, KD Hirschman, PM Fauchet Journal of applied physics 80 (1), 295-300, 1996 | 132 | 1996 |
| Light-emitting porous silicon: materials science, properties, and device applications PM Fauchet, L Tsybeskov, C Peng, SP Duttagupta, J Von Behren, ... IEEE Journal of selected topics in quantum electronics 1 (4), 1126-1139, 1995 | 101 | 1995 |
| Room-temperature photoluminescence and electroluminescence from Er-doped silicon-rich silicon oxide L Tsybeskov, SP Duttagupta, KD Hirschman, PM Fauchet, KL Moore, ... Applied physics letters 70 (14), 1790-1792, 1997 | 68 | 1997 |
| Betavoltaic and photovoltaic energy conversion in three‐dimensional macroporous silicon diodes JP Clarkson, W Sun, KD Hirschman, LL Gadeken, PM Fauchet Physica status solidi (a) 204 (5), 1536-1540, 2007 | 67 | 2007 |
| Stable photoluminescence and electroluminescence from porous silicon PM Fauchet, L Tsybeskov, SP Duttagupta, KD Hirschman Thin Solid Films 297 (1-2), 254-260, 1997 | 67 | 1997 |
| Monolithically integrated Si/SiGe resonant interband tunnel diode/CMOS demonstrating low voltage MOBILE operation S Sudirgo, RP Nandgaonkar, B Curanovic, JL Hebding, RL Saxer, ... Solid-State Electronics 48 (10-11), 1907-1910, 2004 | 61 | 2004 |
| Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions N Jin, SY Chung, AT Rice, PR Berger, PE Thompson, C Rivas, R Lake, ... IEEE Transactions on Electron Devices 50 (9), 1876-1884, 2003 | 60 | 2003 |
| Fabrication of nanocrystalline silicon superlattices by controlled thermal recrystallization L Tsybeskov, KD Hirschman, SP Duttagupta, PM Fauchet, M Zacharias, ... physica status solidi (a) 165 (1), 69-77, 1998 | 56 | 1998 |
| Porous silicon physics and device applications: a status report PM Fauchet, J Von Behren, KD Hirschman, L Tsybeskov, SP Duttagupta physica status solidi (a) 165 (1), 3-13, 1998 | 46 | 1998 |
| Nanocrystalline silicon superlattices: fabrication and characterization M Zacharias, L Tsybeskov, KD Hirschman, PM Fauchet, J Bläsing, ... Journal of non-crystalline solids 227, 1132-1136, 1998 | 45 | 1998 |
| Impact of annealing on contact formation and stability of IGZO TFTs T Mudgal, N Walsh, RG Manley, KD Hirschman ECS Transactions 61 (4), 405, 2014 | 43 | 2014 |
| A Si‐based light‐emitting diode with room‐temperature electroluminescence at 1.1 eV L Tsybeskov, KL Moore, SP Duttagupta, KD Hirschman, DG Hall, ... Applied physics letters 69 (22), 3411-3413, 1996 | 42 | 1996 |
| Methods of making energy conversion devices with a substantially contiguous depletion regions LL Gadeken, W Sun, NP Kherani, PM Fauchet, KD Hirschman US Patent 7,250,323, 2007 | 39 | 2007 |
| Demonstration of high performance TFTs on silicon-on-glass (SiOG) substrate DF Dawson-Elli, CAK Williams, JG Couillard, JS Cites, RG Manley, ... ECS Transactions 8 (1), 223, 2007 | 36 | 2007 |
| Extraordinary crystallization of amorphous Si/SiO2 superlattices M Zacharias, J Bläsing, K Hirschman, L Tsybeskov, PM Fauchet Journal of non-crystalline solids 266, 640-644, 2000 | 27 | 2000 |
