| Controlled Sulfurization Process for the Synthesis of Large Area MoS2 Films and MoS2/WS2 Heterostructures D Chiappe, I Asselberghs, S Sutar, S Iacovo, V Afanas' ev, A Stesmans, ... Advanced Materials Interfaces 3 (4), 1500635, 2016 | 79 | 2016 |
| Novel Cu/SiCN surface topography control for 1 μm pitch hybrid wafer-to-wafer bonding SW Kim, F Fodor, N Heylen, S Iacovo, J De Vos, A Miller, G Beyer, ... 2020 IEEE 70th Electronic Components and Technology Conference (ECTC), 216-222, 2020 | 67 | 2020 |
| Influence of composition of SiCN as interfacial layer on plasma activated direct bonding F Inoue, L Peng, S Iacovo, A Phommahaxay, P Verdonck, J Meersschaut, ... ECS Journal of Solid State Science and Technology 8 (6), P346, 2019 | 45 | 2019 |
| Advances in sicn-sicn bonding with high accuracy wafer-to-wafer (w2w) stacking technology L Peng, SW Kim, S Iacovo, F Inoue, A Phommahaxay, E Sleeckx, ... 2018 IEEE International Interconnect Technology Conference (IITC), 179-181, 2018 | 31 | 2018 |
| Enabling ultra-thin die to wafer hybrid bonding for future heterogeneous integrated systems A Phommahaxay, S Suhard, P Bex, S Iacovo, J Slabbekoorn, F Inoue, ... 2019 IEEE 69th Electronic Components and Technology Conference (ECTC), 607-613, 2019 | 28 | 2019 |
| On the manifestation of phosphorus-vacancy complexes in epitaxial Si: P films SK Dhayalan, J Kujala, J Slotte, G Pourtois, E Simoen, E Rosseel, ... Applied Physics Letters 108 (8), 2016 | 26 | 2016 |
| Introduction of a new carrier system for collective die-to-wafer hybrid bonding and laser-assisted die transfer K Kennes, A Phommahaxay, A Guerrero, O Bauder, S Suhard, P Bex, ... 2020 IEEE 70th Electronic Components and Technology Conference (ECTC), 296-302, 2020 | 17 | 2020 |
| ESR study of p-type natural 2H-polytype MoS2 crystals: The As acceptor activity A Stesmans, S Iacovo, VV Afanas' Ev Applied Physics Letters 109 (17), 2016 | 16 | 2016 |
| Paramagnetic Intrinsic Defects in Polycrystalline Large-Area 2D MoS2 Films Grown on SiO2 by Mo Sulfurization A Stesmans, S Iacovo, D Chiappe, I Radu, C Huyghebaert, S De Gendt, ... Nanoscale Research Letters 12, 1-5, 2017 | 15 | 2017 |
| Area-selective electroless deposition of Cu for hybrid bonding F Inoue, S Iacovo, Z El-Mekki, SW Kim, H Struyf, E Beyne IEEE Electron Device Letters 42 (12), 1826-1829, 2021 | 14 | 2021 |
| Characterization of bonding activation sequences to enable ultra-low Cu/SiCN wafer level hybrid bonding S Iacovo, L Peng, F Nagano, T Uhrmann, J Burggraf, A Fehkührer, ... 2021 IEEE 71st Electronic Components and Technology Conference (ECTC), 2097-2104, 2021 | 14 | 2021 |
| The lead acceptor in p-type natural 2H-polytype MoS2 crystals evidenced by electron paramagnetic resonance S Iacovo, A Stesmans, M Houssa, VV Afanas’Ev Journal of Physics: Condensed Matter 29 (8), 08LT01, 2017 | 13 | 2017 |
| Direct Bonding Using Low Temperature SiCN Dielectrics S Iacovo, F Nagano, VSK Channam, E Walsby, K Crook, K Buchanan, ... 2022 IEEE 72nd Electronic Components and Technology Conference (ECTC), 602-607, 2022 | 12 | 2022 |
| Scaled FinFETs connected by using both wafer sides for routing via buried power rails A Veloso, A Jourdain, D Radisic, R Chen, G Arutchelvan, B O’Sullivan, ... IEEE Transactions on Electron Devices 69 (12), 7173-7179, 2022 | 11 | 2022 |
| Film characterization of low-temperature silicon carbon nitride for direct bonding applications F Nagano, S Iacovo, A Phommahaxay, F Inoue, E Sleeckx, G Beyer, ... ECS Journal of Solid State Science and Technology 9 (12), 123011, 2020 | 11 | 2020 |
| Direct bonding of low temperature heterogeneous dielectrics S Iacovo, A Phommahaxay, F Inoue, P Verdonck, SW Kim, E Sleeckx, ... 2019 IEEE 69th Electronic Components and Technology Conference (ECTC), 2206-2212, 2019 | 11 | 2019 |
| Void formation mechanism related to particles during wafer-to-wafer direct bonding F Nagano, S Iacovo, A Phommahaxay, F Inoue, F Chancerel, H Naser, ... ECS Journal of Solid State Science and Technology 11 (6), 063012, 2022 | 10 | 2022 |
| Demonstration of 3D sequential FD-SOI on CMOS FinFET stacking featuring low temperature Si layer transfer and top tier device fabrication with tier interconnections A Vandooren, N Parihar, J Franco, R Loo, H Arimura, R Rodriguez, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 8 | 2022 |
| 700nm pitch Cu/SiCN wafer-to-wafer hybrid bonding SA Chew, S Iacovo, F Fordor, S Dewilde, K Devriendt, J De Vos, A Miller, ... 2022 IEEE 24th Electronics Packaging Technology Conference (EPTC), 334-337, 2022 | 7 | 2022 |
| Origin of Voids at the SiO2/SiO2 and SiCN/SiCN Bonding Interface Using Positron Annihilation Spectroscopy and Electron Spin Resonance F Nagano, F Inoue, A Phommahaxay, L Peng, F Chancerel, H Naser, ... ECS Journal of Solid State Science and Technology, 2023 | 6 | 2023 |
