| A multi-wavelength 3D-compatible silicon photonics platform on 300mm SOI wafers for 25Gb/s applications F Boeuf, S Crémer, N Vulliet, T Pinguet, A Mekis, G Masini, L Verslegers, ... 2013 IEEE International Electron Devices Meeting, 13.3. 1-13.3. 4, 2013 | 110 | 2013 |
| Selective catalytic reduction of nitrogen monoxide by decane on copper-exchanged beta zeolites G Delahay, B Coq, L Broussous Applied Catalysis B: Environmental 12 (1), 49-59, 1997 | 81 | 1997 |
| SAXS study of formation and growth of tin oxide nanoparticles in the presence of complexing ligands L Broussous, CV Santilli, SH Pulcinelli, AF Craievich The Journal of Physical Chemistry B 106 (11), 2855-2860, 2002 | 64 | 2002 |
| Microfiltration of beer yeast suspensions through stamped ceramic membranes J Stopka, SG Bugan, L Broussous, Š Schlosser, A Larbot Separation and Purification Technology 25 (1-3), 535-543, 2001 | 49 | 2001 |
| Effect of plasma treatments on a porous low-k material–Study of pore sealing W Puyrenier, V Rouessac, L Broussous, D Rébiscoul, A Ayral Microporous and mesoporous materials 106 (1-3), 40-48, 2007 | 48 | 2007 |
| Image sensor with a curved surface F Roy, L Broussous, J Michelot, JP Oddou US Patent 9,099,604, 2015 | 44 | 2015 |
| Electrochemical behavior of copper and cobalt in post-etch cleaning solutions S Bilouk, L Broussous, RP Nogueira, V Ivanova, C Pernel Microelectronic Engineering 86 (10), 2038-2044, 2009 | 42 | 2009 |
| Integration of Cu/SiOC in Cu dual damascene interconnect for 0.1-μm technology M Fayolle, J Torres, G Passemard, F Fusalba, G Fanget, D Louis, ... Microelectronic Engineering 64 (1-4), 35-42, 2002 | 40 | 2002 |
| Structure of SnO2 alcosols and films prepared by sol–gel dip coating AP Rizzato, L Broussous, CV Santilli, SH Pulcinelli, AF Craievich Journal of non-crystalline solids 284 (1-3), 61-67, 2001 | 40 | 2001 |
| Hydrodynamic aspects of filtration antifouling by helically corrugated membranes L Broussous, P Schmitz, H Boisson, E Prouzet, A Larbot Chemical Engineering Science 55 (21), 5049-5057, 2000 | 40 | 2000 |
| Stamped ceramic porous tubes for tangential filtration L Broussous, JC Ruiz, A Larbot, L Cot Separation and purification technology 14 (1-3), 53-57, 1998 | 33 | 1998 |
| Characterization of the impact of plasma treatments and wet cleaning on a porous low k material W Puyrenier, V Rouessac, L Broussous, D Rébiscoul, A Ayral Microelectronic engineering 83 (11-12), 2314-2318, 2006 | 30 | 2006 |
| Porosity and structure evolution of a SiOCH low k material during post-etch cleaning process L Broussous, W Puyrenier, D Rebiscoul, V Rouessac, A Ayral Microelectronic engineering 84 (11), 2600-2605, 2007 | 29 | 2007 |
| General review of issues and perspectives for advanced copper interconnections using air gap as ultra-low K material LG Gosset, V Arnal, C Prindle, R Hoofman, G Verheijden, R Daamen, ... Proceedings of the IEEE 2003 International Interconnect Technology …, 2003 | 29 | 2003 |
| Low cost 300mm double-SOI substrate for low insertion loss 1D & 2D grating couplers C Baudot, D Dutartre, A Souhaité, N Vulliet, A Jones, M Ries, A Mekis, ... 11th International Conference on Group IV Photonics (GFP), 137-138, 2014 | 27 | 2014 |
| Mechanical properties of a plasma-modified porous low-k material L Broussous, G Berthout, D Rebiscoul, V Rouessac, A Ayral Microelectronic Engineering 87 (3), 466-469, 2010 | 24 | 2010 |
| Post-etch cleaning chemistries evaluation for low k-copper integration L Broussous, O Hinsinger, S Favier, P Besson Solid State Phenomena 92, 263-266, 2003 | 23 | 2003 |
| An experimental study of helically stamped ceramic microfiltration membranes using bentonite suspensions L Broussous, E Prouzet, L Beque, A Larbot Separation and purification technology 24 (1-2), 205-221, 2001 | 22 | 2001 |
| Predicting adsorption on bare and modified silica surfaces M Lépinay, L Broussous, C Licitra, F Bertin, V Rouessac, A Ayral, ... The Journal of Physical Chemistry C 119 (11), 6009-6017, 2015 | 18 | 2015 |
| High performance k= 2.5 ULK backend solution using an improved TFHM architecture, extendible to the 45nm technology node R Fox, O Hinsinger, E Richard, E Sabouret, T Berger, C Goldberg, ... IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., 81-84, 2005 | 17 | 2005 |
