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Yan Zhu
Yan Zhu
Toshiba America Electronic Components
Verified email at vt.edu
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Cited by
Cited by
Year
Demonstration of improved heteroepitaxy, scaled gate stack and reduced interface states enabling heterojunction tunnel FETs with high drive current and high on-off ratio
DK Mohata, R Bijesh, Y Zhu, MK Hudait, R Southwick, Z Chbili, ...
2012 Symposium on VLSI technology (VLSIT), 53-54, 2012
792012
X-ray photoelectron spectroscopy analysis and band offset determination of CeO2 deposited on epitaxial (100), (110), and (111)Ge
Y Zhu, N Jain, MK Hudait, D Maurya, R Varghese, S Priya
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2014
602014
Structural, morphological, and band alignment properties of GaAs/Ge/GaAs heterostructures on (100),(110), and (111) A GaAs substrates
MK Hudait, Y Zhu, N Jain, JL Hunter Jr
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2013
532013
Strain-engineered biaxial tensile epitaxial germanium for high-performance Ge/InGaAs tunnel field-effect transistors
M Clavel, P Goley, N Jain, Y Zhu, MK Hudait
IEEE Journal of the Electron Devices Society 3 (3), 184-193, 2015
392015
Low-power tunnel field effect transistors using mixed As and Sb based heterostructures
Y Zhu, MK Hudait
Nanotechnology Reviews 2 (6), 637-678, 2013
392013
Role of InAs and GaAs terminated heterointerfaces at source/channel on the mixed As-Sb staggered gap tunnel field effect transistor structures grown by molecular beam epitaxy
Y Zhu, N Jain, S Vijayaraghavan, DK Mohata, S Datta, D Lubyshev, ...
Journal of Applied Physics 112 (2), 024306, 2012
392012
Structural and band alignment properties of Al2O3 on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy
MK Hudait, Y Zhu, D Maurya, S Priya, PK Patra, AWK Ma, A Aphale, ...
Journal of Applied Physics 113 (13), 134311, 2013
382013
Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure
Y Zhu, N Jain, S Vijayaraghavan, DK Mohata, S Datta, D Lubyshev, ...
Journal of Applied Physics 112 (9), 094312, 2012
382012
Heterogeneous integration of epitaxial Ge on Si using AlAs/GaAs buffer architecture: Suitability for low-power fin field-effect transistors
MK Hudait, M Clavel, P Goley, N Jain, Y Zhu
Scientific reports 4 (1), 1-6, 2014
352014
Reliability studies on high-temperature operation of mixed As/Sb staggered gap tunnel FET material and devices
Y Zhu, DK Mohata, S Datta, MK Hudait
IEEE transactions on device and materials reliability 14 (1), 245-254, 2013
312013
In situ grown Ge in an arsenic-free environment for GaAs/Ge/GaAs heterostructures on off-oriented (100) GaAs substrates using molecular beam epitaxy
MK Hudait, Y Zhu, N Jain, S Vijayaraghavan, A Saha, T Merritt, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2012
302012
Effect of built-in electric field in photovoltaic InAs quantum dot embedded GaAs solar cell
XJ Shang, JF He, HL Wang, MF Li, Y Zhu, ZC Niu, Y Fu
Applied Physics A: Materials Science & Processing 103 (2), 335-341, 2011
302011
Heterointerface engineering of broken-gap InAs/GaSb multilayer structures
JS Liu, Y Zhu, PS Goley, MK Hudait
ACS applied materials & interfaces 7 (4), 2512-2517, 2015
282015
Integration of SrTiO3 on Crystallographically Oriented Epitaxial Germanium for Low-Power Device Applications
MK Hudait, M Clavel, Y Zhu, PS Goley, S Kundu, D Maurya, S Priya
ACS applied materials & interfaces 7 (9), 5471-5479, 2015
272015
Band offset determination of mixed As/Sb type-II staggered gap heterostructure for n-channel tunnel field effect transistor application
Y Zhu, N Jain, DK Mohata, S Datta, D Lubyshev, JM Fastenau, AK Liu, ...
Journal of Applied Physics 113 (2), 024319, 2013
252013
Design, fabrication, and analysis of p-channel arsenide/antimonide hetero-junction tunnel transistors
B Rajamohanan, D Mohata, Y Zhu, M Hudait, Z Jiang, M Hollander, ...
Journal of Applied Physics 115 (4), 044502, 2014
242014
Energy band alignment of atomic layer deposited HfO2 oxide film on epitaxial (100)Ge, (110)Ge, and (111)Ge layers
MK Hudait, Y Zhu
Journal of Applied Physics 113 (11), 114303, 2013
242013
Microfluidic low-input fluidized-bed enabled ChIP-seq device for automated and parallel analysis of histone modifications
TW Murphy, YP Hsieh, S Ma, Y Zhu, C Lu
Analytical chemistry 90 (12), 7666-7674, 2018
222018
Structural properties and band offset determination of p-channel mixed As/Sb type-II staggered gap tunnel field-effect transistor structure
Y Zhu, N Jain, DK Mohata, S Datta, D Lubyshev, JM Fastenau, AK Liu, ...
Applied Physics Letters 101 (11), 112106-112106-4, 2012
222012
Energy band alignment of atomic layer deposited HfO2 on epitaxial (110) Ge grown by molecular beam epitaxy
MK Hudait, Y Zhu, D Maurya, S Priya
Applied Physics Letters 102, 093109, 2013
182013
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