Teimuraz Mchedlidze (Mtchedlidze)
Teimuraz Mchedlidze (Mtchedlidze)
Verified email at - Homepage
Cited by
Cited by
Residual stress in Si nanocrystals embedded in a matrix
T Arguirov, T Mchedlidze, M Kittler, R Rölver, B Berghoff, M Först, ...
Applied Physics Letters 89 (5), 053111, 2006
The Direct Observation of Grown‐in Laser Scattering Tomography Defects in Czochralski Silicon
M Nishimura, S Yoshino, H Motoura, S Shimura, T Mchedlidze, T Hikone
Journal of the Electrochemical Society 143 (10), L243, 1996
Regular dislocation networks in silicon as a tool for nanostructure devices used in optics, biology, and electronics
M Kittler, X Yu, T Mchedlidze, T Arguirov, OF Vyvenko, W Seifert, ...
Small 3 (6), 964-973, 2007
Influence of dislocation loops on the near-infrared light emission from silicon diodes
T Hoang, J Holleman, P LeMinh, J Schmitz, T Mchedlidze, T Arguirov, ...
IEEE transactions on electron devices 54 (8), 1860-1866, 2007
Temperature dependence of conduction by reconstructured dislocations in silicon and nonlinear effects
VV Kveder, AE Koshelev, T Mchedlidze, AIS Yu. A. Osip’yan
Zh. Éksp. Teor. Fiz 83 (2), 699, 1989
Direct detection of carrier traps in Si solar cells after light‐induced degradation
T Mchedlidze, J Weber
physica status solidi (RRL)–Rapid Research Letters 9 (2), 108-110, 2015
Effect of laser annealing on crystallinity of the Si layers in Si/SiO2 multiple quantum wells
T Arguirov, T Mchedlidze, VD Akhmetov, S Kouteva-Arguirova, M Kittler, ...
Applied Surface Science 254 (4), 1083-1086, 2007
Capability of photoluminescence for characterization of multi-crystalline silicon
T Mchedlidze, W Seifert, M Kittler, AT Blumenau, B Birkmann, T Mono, ...
Journal of Applied Physics 111 (7), 073504, 2012
Light-induced solid-to-solid phase transformation in Si nanolayers of Si− SiO 2 multiple quantum wells
T Mchedlidze, T Arguirov, S Kouteva-Arguirova, M Kittler, R Rölver, ...
Physical Review B 77 (16), 161304, 2008
Rapid dislocation‐related D1‐photoluminescence imaging of multicrystalline Si wafers at room temperature
RP Schmid, D Mankovics, T Arguirov, M Ratzke, T Mchedlidze, M Kittler
physica status solidi (a) 208 (4), 888-892, 2011
Temperature dependence of conduction by reconstructed dislocations in silicon and nonlinear effects
VV Kveder, AE Koshelev, TR Mchelidze, YA Osip'yan, AI Shalynin
Journal of Experimental and Theoretical Physics 68 (1), 104, 1989
Electric‐Dipole Spin Resonance of Dislocations in Plastically Deformed p‐Type Silicon
M Wattenbach, C Kisielowski‐Kemmerich, H Alexander, VV Kveder, ...
physica status solidi (b) 158 (1), K49-K53, 1990
EPR Study of Hydrogen‐Related Radiation‐Induced Shallow Donors in Silicon
VP Markevich, VP Markevich, T McHedlidze, M Suezawa, LI Murin
physica status solidi (b) 210 (2), 545-549, 1998
Subsurface damage in single diamond tool machined Si wafers
T Mchedlidze, I Yonenaga, K Sumino
Materials Science Forum 196, 1841-1846, 1995
Defect states in Si containing dislocation nets
SA Shevchenko, YA Ossipyan, TR Mchedlidze, EA Steinman, RA Batto
physica status solidi (a) 146 (2), 745-755, 1994
Influence of electric field on spectral positions of dislocation-related luminescence peaks in silicon: Stark effect
T Mchedlidze, T Arguirov, M Kittler, T Hoang, J Holleman, J Schmitz
Applied physics letters 91 (20), 201113, 2007
Determination of the Origin of Dislocation Related Luminescence from Silicon Using Regular Dislocation Networks
T Mchedlidze, O Kononchuk, T Arguirov, M Trushin, M Reiche, M Kittler
Solid State Phenomena 156, 567-572, 2010
Electron spin resonance signal from a tetra-interstitial defect in silicon
T Mchedlidze, M Suezawa
Journal of Physics: Condensed Matter 15 (22), 3683, 2003
Characterization of deep levels introduced by RTA and by subsequent anneals in n-type silicon
D Kot, T Mchedlidze, G Kissinger, W Von Ammon
ECS Transactions 50 (5), 269, 2013
Influence of a substrate, structure and annealing procedures on crystalline and optical properties of Si/SiO2 multiple quantum wells
T Mchedlidze, T Arguirov, S Kouteva-Arguirova, G Jia, M Kittler, R Rölver, ...
Thin Solid Films 516 (20), 6800-6803, 2008
The system can't perform the operation now. Try again later.
Articles 1–20