L. Ralph Dawson
Title
Cited by
Cited by
Year
structure based on type-II strained layer superlattices
JB Rodriguez, E Plis, G Bishop, YD Sharma, H Kim, LR Dawson, ...
Applied Physics Letters 91 (4), 043514, 2007
2622007
Strain relief by periodic misfit arrays for low defect density GaSb on GaAs
SH Huang, G Balakrishnan, A Khoshakhlagh, A Jallipalli, LR Dawson, ...
Applied physics letters 88 (13), 131911, 2006
2602006
Dependence of critical layer thickness on strain for InxGa1−xAs/GaAs strained‐layer superlattices
IJ Fritz, ST Picraux, LR Dawson, TJ Drummond, WD Laidig, NG Anderson
Applied physics letters 46 (10), 967-969, 1985
2491985
Controversy of critical layer thickness for InGaAs/GaAs strained‐layer epitaxy
PL Gourley, IJ Fritz, LR Dawson
Applied physics letters 52 (5), 377-379, 1988
2011988
Critical layer thickness in In0.2Ga0.8As/GaAs single strained quantum well structures
IJ Fritz, PL Gourley, LR Dawson
Applied physics letters 51 (13), 1004-1006, 1987
1581987
Performance improvement of longwave infrared photodetector based on type-II InAs/GaSb superlattices using unipolar current blocking layers
N Gautam, HS Kim, MN Kutty, E Plis, LR Dawson, S Krishna
Applied Physics Letters 96 (23), 231107, 2010
1402010
Mid-IR focal plane array based on type-II strain layer superlattice detector with design
HS Kim, E Plis, JB Rodriguez, GD Bishop, YD Sharma, LR Dawson, ...
Applied Physics Letters 92 (18), 183502, 2008
1302008
Light‐hole conduction in InGaAs/GaAs strained‐layer superlattices
JE Schirber, IJ Fritz, LR Dawson
Applied physics letters 46 (2), 187-189, 1985
1191985
Midwave (4 μm) infrared lasers and light‐emitting diodes with biaxially compressed InAsSb active regions
SR Kurtz, RM Biefeld, LR Dawson, KC Baucom, AJ Howard
Applied physics letters 64 (7), 812-814, 1994
1171994
Ordering-induced band-gap reduction in InAs 1− x Sb x (x≊ 0.4) alloys and superlattices
SR Kurtz, LR Dawson, RM Biefeld, DM Follstaedt, BL Doyle
Physical Review B 46 (3), 1909, 1992
1101992
Bias dependent dual band response from type II strain layer superlattice detectors
A Khoshakhlagh, JB Rodriguez, E Plis, GD Bishop, YD Sharma, HS Kim, ...
Applied Physics Letters 91 (26), 263504, 2007
1032007
III/V ratio based selectivity between strained Stranski-Krastanov and strain-free GaSb quantum dots on GaAs
G Balakrishnan, J Tatebayashi, A Khoshakhlagh, SH Huang, A Jallipalli, ...
Applied physics letters 89 (16), 161104, 2006
1022006
wavelength InAs quantum dashes grown on a GaAs substrate using a metamorphic buffer layer
G Balakrishnan, S Huang, TJ Rotter, A Stintz, LR Dawson, KJ Malloy, ...
Applied physics letters 84 (12), 2058-2060, 2004
942004
InAs quantum-dot GaAs-based lasers grown on AlGaAsSb metamorphic buffers
YC Xin, LG Vaughn, LR Dawson, A Stintz, Y Lin, LF Lester, DL Huffaker
Journal of applied physics 94 (3), 2133-2135, 2003
922003
Growth mechanisms of highly mismatched AlSb on a Si substrate
G Balakrishnan, S Huang, LR Dawson, YC Xin, P Conlin, DL Huffaker
Applied Physics Letters 86 (3), 034105, 2005
872005
High operating temperature interband cascade midwave infrared detector based on type-II InAs/GaSb strained layer superlattice
N Gautam, S Myers, AV Barve, B Klein, EP Smith, DR Rhiger, LR Dawson, ...
Applied Physics Letters 101 (2), 021106, 2012
862012
Atomistic modeling of strain distribution in self-assembled interfacial misfit dislocation (IMF) arrays in highly mismatched III–V semiconductor materials
A Jallipalli, G Balakrishnan, SH Huang, A Khoshakhlagh, LR Dawson, ...
Journal of crystal growth 303 (2), 449-455, 2007
782007
Raman characterization of semiconductors revisited
FH Pollak, R Tsu
Spectroscopic Characterization Techniques for Semiconductor Technology I 452 …, 1984
76*1984
Strain measurements by channeling angular scans
ST Picraux, LR Dawson, GC Osbourn, RM Biefeld, WK Chu
Applied physics letters 43 (11), 1020-1022, 1983
721983
Near-equilibrium LPE growth of GaAs-Ga1− xAlxAs double heterostructures
LR Dawson
Journal of Crystal Growth 27, 86-96, 1974
711974
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