| Plasmonic Gold Nanorods Coverage Influence on Enhancement of the Photoluminescence of Two-Dimensional MoS2 Monolayer KCJ Lee, YH Chen, HY Lin, CC Cheng, PY Chen, TY Wu, MH Shih, ... Scientific reports 5 (1), 16374, 2015 | 130 | 2015 |
| MBE-grown 232–270 nm deep-UV LEDs using monolayer thin binary GaN/AlN quantum heterostructures SM Islam, K Lee, J Verma, V Protasenko, S Rouvimov, S Bharadwaj, ... Applied Physics Letters 110 (4), 2017 | 127 | 2017 |
| High breakdown voltage in RF AlN/GaN/AlN quantum well HEMTs A Hickman, R Chaudhuri, SJ Bader, K Nomoto, K Lee, HG Xing, D Jena IEEE Electron Device Letters 40 (8), 1293-1296, 2019 | 100 | 2019 |
| Crystal orientation dictated epitaxy of ultrawide-bandgap 5.4- to 8.6-eV α-(AlGa)2O3 on m-plane sapphire R Jinno, CS Chang, T Onuma, Y Cho, ST Ho, D Rowe, MC Cao, K Lee, ... Science Advances 7 (2), eabd5891, 2021 | 86 | 2021 |
| GaN HEMTs on Si with regrown contacts and cutoff/maximum oscillation frequencies of 250/204 GHz L Li, K Nomoto, M Pan, W Li, A Hickman, J Miller, K Lee, Z Hu, SJ Bader, ... IEEE Electron Device Letters 41 (5), 689-692, 2020 | 86 | 2020 |
| Deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures SM Islam, V Protasenko, K Lee, S Rouvimov, J Verma, HG Xing, D Jena Applied Physics Letters 111 (9), 2017 | 75 | 2017 |
| Activation of buried p-GaN in MOCVD-regrown vertical structures W Li, K Nomoto, K Lee, SM Islam, Z Hu, M Zhu, X Gao, J Xie, M Pilla, ... Applied Physics Letters 113 (6), 2018 | 57 | 2018 |
| Development of GaN vertical trench-MOSFET with MBE regrown channel W Li, K Nomoto, K Lee, SM Islam, Z Hu, M Zhu, X Gao, M Pilla, D Jena, ... IEEE Transactions on Electron Devices 65 (6), 2558-2564, 2018 | 52 | 2018 |
| Surface control and MBE growth diagram for homoepitaxy on single-crystal AlN substrates K Lee, YJ Cho, LJ Schowalter, M Toita, HG Xing, D Jena Applied Physics Letters 116 (26), 2020 | 34 | 2020 |
| GaN/AlN quantum-disk nanorod 280 nm deep ultraviolet light emitting diodes by molecular beam epitaxy T Wei, SM Islam, U Jahn, J Yan, K Lee, S Bharadwaj, X Ji, J Wang, J Li, ... Optics Letters 45 (1), 121-124, 2020 | 34 | 2020 |
| Molecular beam homoepitaxy on bulk AlN enabled by aluminum-assisted surface cleaning YJ Cho, CS Chang, K Lee, M Gong, K Nomoto, M Toita, LJ Schowalter, ... Applied Physics Letters 116 (17), 172106, 2020 | 33 | 2020 |
| Compact tunable laser with InGaAsP photonic crystal nanorods for C-band communication MH Shih, KS Hsu, K Lee, KT Lai, CT Lin, PT Lee IEEE Journal of Selected Topics in Quantum Electronics 21 (6), 738-742, 2015 | 25 | 2015 |
| Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes S Bharadwaj, J Miller, K Lee, J Lederman, M Siekacz, HG Xing, D Jena, ... Optics Express 28 (4), 4489-4500, 2020 | 24 | 2020 |
| MBE growth and donor doping of coherent ultrawide bandgap AlGaN alloy layers on single-crystal AlN substrates K Lee, R Page, V Protasenko, LJ Schowalter, M Toita, HG Xing, D Jena Applied Physics Letters 118 (9), 2021 | 20 | 2021 |
| Polarization-induced 2D hole gases in pseudomorphic undoped GaN/AlN heterostructures on single-crystal AlN substrates Z Zhang, J Encomendero, R Chaudhuri, Y Cho, V Protasenko, K Nomoto, ... Applied Physics Letters 119 (16), 2021 | 19 | 2021 |
| Light-emitting diodes with AlN polarization-induced buried tunnel junctions: A second look K Lee, S Bharadwaj, YT Shao, L van Deurzen, V Protasenko, DA Muller, ... Applied Physics Letters 117 (6), 2020 | 16 | 2020 |
| 600 V GaN vertical V-trench MOSFET with MBE regrown channel W Li, K Nomoto, K Lee, SM Islam, Z Hu, M Zhu, X Gao, M Pilla, D Jena, ... 2017 75th Annual Device Research Conference (DRC), 1-2, 2017 | 16 | 2017 |
| Terahertz spectroscopy of an electron-hole bilayer system in AlN/GaN/AlN quantum wells H Condori Quispe, SM Islam, S Bader, A Chanana, K Lee, R Chaudhuri, ... Applied Physics Letters 111 (7), 2017 | 15 | 2017 |
| Realization of GaN PolarMOS using selective-area regrowth by MBE and its breakdown mechanisms W Li, K Nomoto, A Sundar, K Lee, M Zhu, Z Hu, E Beam, J Xie, M Pilla, ... Japanese Journal of Applied Physics 58 (SC), SCCD15, 2019 | 14 | 2019 |
| Bottom tunnel junction blue light-emitting field-effect transistors S Bharadwaj, K Lee, K Nomoto, A Hickman, L van Deurzen, V Protasenko, ... Applied Physics Letters 117 (3), 2020 | 9 | 2020 |
