| The 2018 GaN power electronics roadmap H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ... Journal of Physics D: Applied Physics 51 (16), 163001, 2018 | 1069 | 2018 |
| 2017 IEEE Int. Electron Devices Meeting (IEDM) J Wang, L Cao, J Xie, E Beam, R McCarthy, C Youtsey, P Fay IEEE, 2017 | 416* | 2017 |
| High voltage, high current GaN-on-GaN pn diodes with partially compensated edge termination J Wang, L Cao, J Xie, E Beam, R McCarthy, C Youtsey, P Fay Applied Physics Letters 113 (2), 023502, 2018 | 100 | 2018 |
| Oxygen-free atomic layer deposition of indium sulfide RF McCarthy, MS Weimer, JD Emery, AS Hock, ABF Martinson ACS applied materials & interfaces 6 (15), 12137-12145, 2014 | 47 | 2014 |
| Wafer‐scale epitaxial lift‐off of GaN using bandgap‐selective photoenhanced wet etching C Youtsey, R McCarthy, R Reddy, K Forghani, A Xie, E Beam, J Wang, ... physica status solidi (b) 254 (8), 1600774, 2017 | 44 | 2017 |
| Template-free vapor-phase growth of patrónite by atomic layer deposition MS Weimer, RF McCarthy, JD Emery, MJ Bedzyk, FG Sen, A Kinaci, ... Chemistry of Materials 29 (7), 2864-2873, 2017 | 43 | 2017 |
| VxIn(2–x)S3 Intermediate Band Absorbers Deposited by Atomic Layer Deposition RF McCarthy, MS Weimer, RT Haasch, RD Schaller, AS Hock, ... Chemistry of Materials 28 (7), 2033-2040, 2016 | 39 | 2016 |
| Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE T Ciarkowski, N Allen, E Carlson, R McCarthy, C Youtsey, J Wang, P Fay, ... Materials 12 (15), 2455, 2019 | 34 | 2019 |
| Photoexcited Carrier Dynamics of In2S3 Thin Films RF McCarthy, RD Schaller, DJ Gosztola, GP Wiederrecht, ABF Martinson The journal of physical chemistry letters 6 (13), 2554-2561, 2015 | 30 | 2015 |
| High-voltage vertical GaN pn diodes by epitaxial liftoff from bulk GaN substrates J Wang, R McCarthy, C Youtsey, R Reddy, J Xie, E Beam, L Guido, L Cao, ... IEEE Electron Device Letters 39 (11), 1716-1719, 2018 | 23 | 2018 |
| Thin-film GaN Schottky diodes formed by epitaxial lift-off J Wang, C Youtsey, R McCarthy, R Reddy, N Allen, L Guido, J Xie, ... Applied Physics Letters 110 (17), 173503, 2017 | 23 | 2017 |
| High voltage vertical pn diodes with ion-implanted edge termination and sputtered SiNx passivation on GaN substrates J Wang, L Cao, J Xie, E Beam, R McCarthy, C Youtsey, P Fay 2017 IEEE International Electron Devices Meeting (IEDM), 9.6. 1-9.6. 4, 2017 | 19 | 2017 |
| The Shockley-Queisser limit and practical limits of nanostructured photovoltaics RF McCarthy, HW Hillhouse 2012 38th IEEE Photovoltaic Specialists Conference, 001663-001668, 2012 | 11 | 2012 |
| Ion‐Implant Isolated Vertical GaN p‐n Diodes Fabricated with Epitaxial Lift‐Off From GaN Substrates J Wang, R McCarthy, C Youtsey, R Reddy, J Xie, E Beam, L Guido, L Cao, ... physica status solidi (a) 216 (4), 1800652, 2019 | 3 | 2019 |
| Demonstration of thin-film GaN Schottky diodes fabricated with epitaxial lift-off J Wang, C Youtsey, R McCarthy, R Reddy, L Guido, A Xie, E Beam, P Fay 2016 74th Annual Device Research Conference (DRC), 1-2, 2016 | 3 | 2016 |
| A simple model for voltage-dependent carrier collection efficiency in solar cells RF McCarthy, HW Hillhouse Journal of Applied Physics 115 (14), 143703, 2014 | 3 | 2014 |
| Epitaxial Lift-Off of GaN and Related Materials for Device Applications P Fay, J Wang, L Cao, J Xie, E Beam, R McCarthy, R Reddy, C Youtsey ECS Transactions 92 (4), 97, 2019 | 2 | 2019 |
| Epitaxial Lift-Off of GaN and Related Materials for Device Applications P Fay, J Wang, L Cao, J Xie, E Beam, R McCarthy, R Reddy, C Youtsey ECS Transactions 92 (4), 97, 2019 | 2 | 2019 |
| Epitaxial lift-off for III-nitride devices C Youtsey, R McCarthy, P Fay III-Nitride Electronic Devices 102, 467-514, 2019 | 2 | 2019 |
| Chemical and spatial control of substitutional intermediate band materials: Toward the atomic layer deposition of V0.25In1.75SP3 RF McCarthy, MS Weimer, AS Hock, ABF Martinson 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), 0250-0253, 2014 | 2 | 2014 |
