Bo Song
Title
Cited by
Cited by
Year
InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts andof 370 GHz
Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, T Fang, ...
IEEE Electron Device Letters 33 (7), 988-990, 2012
3602012
Esaki diodes in van der Waals heterojunctions with broken-gap energy band alignment
R Yan, S Fathipour, Y Han, B Song, S Xiao, M Li, N Ma, V Protasenko, ...
Nano letters 15 (9), 5791-5798, 2015
2502015
1.9-kV AlGaN/GaN lateral Schottky barrier diodes on silicon
M Zhu, B Song, M Qi, Z Hu, K Nomoto, X Yan, Y Cao, W Johnson, E Kohn, ...
IEEE Electron Device Letters 36 (4), 375-377, 2015
1562015
Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown
Z Hu, K Nomoto, B Song, M Zhu, M Qi, M Pan, X Gao, V Protasenko, ...
Applied Physics Letters 107 (24), 243501, 2015
1352015
1.7-kV and 0.55- GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability
K Nomoto, B Song, Z Hu, M Zhu, M Qi, N Kaneda, T Mishima, T Nakamura, ...
IEEE Electron Device Letters 37 (2), 161-164, 2015
1332015
Ultrascaled InAlN/GaN high electron mobility transistors with cutoff frequency of 400 GHz
Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, B Song, ...
Japanese Journal of Applied Physics 52 (8S), 08JN14, 2013
1042013
Gate-recessed integrated E/D GaN HEMT technology with fT/fmax >300 GHz
ML Schuette, A Ketterson, B Song, E Beam, TM Chou, M Pilla, HQ Tserng, ...
IEEE Electron Device Letters 34 (6), 741-743, 2013
932013
Quaternary Barrier InAlGaN HEMTs Withof 230/300 GHz
R Wang, G Li, G Karbasian, J Guo, B Song, Y Yue, Z Hu, O Laboutin, ...
IEEE electron device letters 34 (3), 378-380, 2013
632013
Polarization-induced GaN-on-insulator E/D mode p-channel heterostructure FETs
G Li, R Wang, B Song, J Verma, Y Cao, S Ganguly, A Verma, J Guo, ...
IEEE electron device letters 34 (7), 852-854, 2013
602013
High breakdown single-crystal GaN pn diodes by molecular beam epitaxy
M Qi, K Nomoto, M Zhu, Z Hu, Y Zhao, V Protasenko, B Song, X Yan, G Li, ...
Applied Physics Letters 107 (23), 232101, 2015
492015
GaN-on-GaN pn power diodes with 3.48 kV and 0.95 mΩ-cm2: A record high figure-of-merit of 12.8 GW/cm2
K Nomoto, Z Hu, B Song, M Zhu, M Qi, R Yan, V Protasenko, E Imhoff, ...
2015 IEEE international electron devices meeting (IEDM), 9.7. 1-9.7. 4, 2015
492015
High holding voltage SCR-LDMOS stacking structure with ring-resistance-triggered technique
F Ma, B Zhang, Y Han, J Zheng, B Song, S Dong, H Liang
IEEE Electron Device Letters 34 (9), 1178-1180, 2013
442013
Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN
G Li, B Song, S Ganguly, M Zhu, R Wang, X Yan, J Verma, V Protasenko, ...
Applied Physics Letters 104 (19), 193506, 2014
432014
Ultralow-leakage AlGaN/GaN high electron mobility transistors on Si with non-alloyed regrown ohmic contacts
B Song, M Zhu, Z Hu, M Qi, K Nomoto, X Yan, Y Cao, D Jena, HG Xing
IEEE electron Device letters 37 (1), 16-19, 2015
402015
Strained GaN quantum-well FETs on single crystal bulk AlN substrates
M Qi, G Li, S Ganguly, P Zhao, X Yan, J Verma, B Song, M Zhu, K Nomoto, ...
Applied Physics Letters 110 (6), 063501, 2017
362017
Effect of fringing capacitances on the RF performance of GaN HEMTs with T-gates
B Song, B Sensale-Rodriguez, R Wang, J Guo, Z Hu, Y Yue, F Faria, ...
IEEE Transactions on Electron Devices 61 (3), 747-754, 2014
312014
Monolithically integrated E/D-mode InAlN HEMTs with ƒtmax> 200/220 GHz
B Song, B Sensale-Rodriguez, R Wang, A Ketterson, M Schuette, E Beam, ...
70th Device Research Conference, 1-2, 2012
272012
Impact of CF4 plasma treatment on threshold voltage and mobility in Al2O3/InAlN/GaN MOSHEMTs
Z Hu, Y Yue, M Zhu, B Song, S Ganguly, J Bergman, D Jena, HG Xing
Applied Physics Express 7 (3), 031002, 2014
252014
Substrate-triggered GGNMOS in 65 nm CMOS process for ESD application
B Song, Y Han, M Li, S Dong, W Guo, D Huang, F Ma, M Miao
Electronics letters 46 (7), 518-520, 2010
182010
Polarization induced doped transistor
X Huili Grace, D Jena, K Nomoto, B Song, M Zhu, Z Hu
US Patent 9,362,389, 2016
152016
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