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Yanan Sun
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Year
N-type carbon-nanotube MOSFET device profile optimization for very large scale integration
Y Sun, V Kursun
Transactions on Electrical and Electronic Materials 12 (2), 43-50, 2011
432011
A novel robust and low-leakage SRAM cell with nine carbon nanotube transistors
Y Sun, H Jiao, V Kursun
IEEE Transactions on very large scale integration (VLSI) Systems 23 (9 …, 2014
262014
Carbon nanotubes blowing new life into NP dynamic CMOS circuits
Y Sun, V Kursun
IEEE Transactions on Circuits and Systems I: Regular Papers 61 (2), 420-428, 2013
242013
Go unary: A novel synapse coding and mapping scheme for reliable ReRAM-based neuromorphic computing
C Ma, Y Sun, W Qian, Z Meng, R Yang, L Jiang
2020 Design, Automation & Test in Europe Conference & Exhibition (DATE …, 2020
122020
Uniform carbon nanotube diameter and nanoarray pitch for VLSI of 16nm p-channel MOSFETs
Y Sun, V Kursun
2011 IEEE/IFIP 19th International Conference on VLSI and System-on-Chip, 226-231, 2011
122011
ITT-RNA: Imperfection tolerable training for RRAM-crossbar-based deep neural-network accelerator
Z Song, Y Sun, L Chen, T Li, N Jing, X Liang, L Jiang
IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2020
112020
Uniform diameter and pitch co-design of 16nm n-type carbon nanotube channel arrays for VLSI
Y Sun, V Kursun
2011 3rd Asia Symposium on Quality Electronic Design (ASQED), 211-216, 2011
112011
Energy-efficient nonvolatile SRAM design based on resistive switching multi-level cells
Y Sun, J Gu, W He, Q Wang, N Jing, Z Mao, W Qian, L Jiang
IEEE Transactions on Circuits and Systems II: Express Briefs 66 (5), 753-757, 2019
92019
High-yield and robust 9T SRAM cell tolerant to removal of metallic carbon nanotubes
Y Sun, W He, Z Mao, H Jiao, V Kursun
IEEE Transactions on Device and Materials Reliability 17 (1), 20-31, 2017
92017
Impact of virtual inertia on increasing the hosting capacity of island diesel-PV ac-grid
CZ Ally, Y Sun, ECW De Jong
2018 53rd International Universities Power Engineering Conference (UPEC), 1-6, 2018
82018
Harmonic resonance risk of massive ultra fast charging station grid integration
Y Sun, ECW De Jong, V Cuk, JFG Cobben
2018 18th International Conference on Harmonics and Quality of Power (ICHQP …, 2018
82018
Unary coding and variation-aware optimal mapping scheme for reliable ReRAM-based neuromorphic computing
Y Sun, C Ma, Z Li, Y Zhao, J Jiang, W Qian, R Yang, Z He, L Jiang
IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2021
72021
Monolithic 3D carbon nanotube memory for enhanced yield and integration density
Y Sun, W He, Z Mao, H Jiao, V Kursun
IEEE Transactions on Circuits and Systems I: Regular Papers 67 (7), 2431-2441, 2020
62020
Metallic-CN-removal-tolerant high-yield six-CN-MOSFET SRAM cell for carbon-based embedded memory
Y Sun, W He, Z Mao, H Jiao, V Kursun
IEEE Transactions on Electron Devices 65 (3), 1230-1238, 2018
62018
Variable strength keeper for high-speed and low-leakage carbon nanotube domino logic
Y Sun, W He, Z Mao, V Kursun
Microelectronics Journal 62, 12-20, 2017
62017
Low-power and compact NP dynamic CMOS adder with 16nm carbon nanotube transistors
Y Sun, V Kursun
2013 IEEE International Symposium on Circuits and Systems (ISCAS), 2119-2122, 2013
62013
A 0.33 V 2.5 μW cross-point data-aware write structure, read-half-select disturb-free sub-threshold SRAM in 130 nm CMOS
W Jin, W He, J Jiang, H Huang, X Zhao, Y Sun, X Chen, N Jing
Integration 58, 27-34, 2017
42017
Variation-Aware Global Placement for Improving Timing-Yield of Carbon-Nanotube Field Effect Transistor Circuit
C Wang, Y Sun, S Hu, L Jiang, W Qian
ACM Transactions on Design Automation of Electronic Systems (TODAES) 23 (4 …, 2018
32018
Carbon-based sleep switch dynamic logic circuits with variable strength keeper for lower-leakage currents and higher-speed
Y Sun, V Kursun
2015 IEEE International Symposium on Circuits and Systems (ISCAS), 2720-2723, 2015
32015
Leakage current and bottom gate voltage considerations in developing maximum performance 16nm n-channel carbon nanotube transistors
Y Sun, V Kursun
2011 IEEE International Symposium of Circuits and Systems (ISCAS), 2513-2516, 2011
32011
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