Fan Zhang
Fan Zhang
Sr. Member of Technical Staff, Maxim Integrated
Verified email at mymail.vcu.edu - Homepage
Title
Cited by
Cited by
Year
InGaN light-emitting diodes: Efficiency-limiting processes at high injection
V Avrutin, S din Ahmad Hafiz, F Zhang, Ü Özgür, H Morkoç, A Matulionis
Journal of Vacuum Science & Technology A 31 (05), 0809, 2013
422013
Impact of active layer design on InGaN radiative recombination coefficient and LED performance
X Li, S Okur, F Zhang, V Avrutin, Ü Özgür, H Morkoç, SM Hong, SH Yen, ...
Journal of Applied Physics 111 (06), 3112, 2012
392012
Zero-phonon line and fine structure of the yellow luminescence band in GaN
MA Reshchikov, JD McNamara, F Zhang, M Monavarian, A Usikov, ...
Physical Review B 94 (3), 035201, 2016
332016
Determination of carrier diffusion length in GaN
S Hafiz, F Zhang, M Monavarian, V Avrutin, H Morkoç, Ü Özgür, S Metzner, ...
Journal of Applied Physics 117 (01), 3106, 2015
292015
Optical studies of strain and defect distribution in semipolar (11¯01) GaN on patterned Si substrates
N Izyumskaya, F Zhang, S Okur, T Selden, V Avrutin, Ü Özgür, S Metzner, ...
Journal of Applied Physics 114 (11), 3502, 2013
282013
The effect of stair case electron injector design on electron overflow in InGaN light emitting diodes
F Zhang, X Li, S Hafiz, S Okur, V Avrutin, Ü Özgür, H Morkoç, A Matulionis
Applied Physics Letters 103 (05), 1122, 2013
232013
Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells
D Rosales, B Gil, T Bretagnon, B Guizal, F Zhang, S Okur, M Monavarian, ...
Journal of Applied Physics 115 (07), 3510, 2014
212014
Degradation and phase noise of InAlN/AlN/GaN heterojunction field effect transistors: Implications for hot electron/phonon effects
CY Zhu, M Wu, C Kayis, F Zhang, X Li, RA Ferreyra, A Matulionis, ...
Applied Physics Letters 101 (10), 3502, 2012
192012
Improvement of carrier injection symmetry and quantum efficiency in InGaN light-emitting diodes with Mg delta-doped barriers
F Zhang, N Can, S Hafiz, M Monavarian, S Das, V Avrutin, Ü Özgür, ...
Applied Physics Letters 106 (18), 1105, 2015
182015
Improved quantum efficiency in InGaN light emitting diodes with multi-double-heterostructure active regions
X Li, S Okur, F Zhang, SA Hafiz, V Avrutin, Ü Özgür, H Morkoç, ...
Applied Physics Letters 101 (04), 1115, 2012
182012
On the quantum efficiency of InGaN light emitting diodes: Effects of active layer design, electron cooler, and electron blocking layer
X Li, F Zhang, S Okur, V Avrutin, SJ Liu, Ü Özgür, H Morkoç, SM Hong, ...
Physic status solidi (a) 208 (12), 2011
182011
Saga of efficiency degradation at high injection in InGaN light emitting diodes
V AVRUTIN, SA HAFIZ, F ZHANG, Ü ÖZGÜR, E BELLOTTI, F BERTAZZI, ...
Turkish Journal of Physics 38 (3), 269, 2014
152014
Microscopic distribution of extended defects and blockage of threading dislocations by stacking faults in semipolar (11¯01) GaN revealed from spatially resolved luminescence
S Okur, S Metzner, N Izyumskaya, F Zhang, V Avrutin, C Karbaum, ...
Applied Physics Letters 103 (21), 1908, 2013
152013
Hexagonal-based pyramid void defects in GaN and InGaN
AB Yankovich, AV Kvit, X Li, F Zhang, V Avrutin, HY Liu, N Izyumskaya, ...
Journal of Applied Physics 111 (02), 3517, 2012
152012
Recombination dynamics of excitons with low non-radiative component in semi-polar (10-11)-oriented GaN/AlGaN multiple quantum wells
D Rosales, B Gil, T Bretagnon, B Guizal, N Izyumskaya, M Monavarian, ...
Journal of Applied Physics 116 (09), 3517, 2014
142014
Thickness Variations and Absence of Lateral Compositional Fluctuations in Aberration-Corrected STEM Images of InGaN LED Active Regions at Low Dose
AB Yankovicha, AV Kvit, X Li, F Zhang, V Avrutin, H Liu, N Izyumskaya, ...
Microscopy and Microanalysis 20 (3), 864, 2014
132014
Indium-incorporation efficiency in semipolar (11-22) oriented InGaN-based light emitting diodes
M Monavarian, S Metzner, N Izyumskaya, S Okur, F Zhang, N Can, S Das, ...
SPIE Proceedings 9363, 93632P, 2015
82015
Impact of carrier localization, recombination, and diffusivity on excited state dynamics in InGaN/GaN quantum wells
T Malinauskas, A Kadys, T Grinys, S Nargelas, R Aleksiejūnas, ...
SPIE Proceedings 8262, 82621S, 2012
82012
Reduction of Flicker Noise in AlGaN/GaN-Based HFETs after High Electric-Field Stress
C Zhu, C Kayis, M Wu, X Li, F Zhang, V Avrutin, U Ozgur, H Morkoc
Electron Device Letters, IEEE 32 (11), 1513, 2011
82011
Active region dimensionality and quantum efficiencies of InGaN LEDs from temperature dependent photoluminescence transients
N Can, S Okur, M Monavarian, F Zhang, V Avrutin, H Morkoç, A Teke, ...
SPIE Proceedings 9363, 93632U, 2015
72015
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