Binh-Minh Nguyen
Binh-Minh Nguyen
HRL Laboratories, LLC
Verified email at u.northwestern.edu
Title
Cited by
Cited by
Year
Dark current suppression in type II superlattice long wavelength infrared photodiodes with M-structure barrier
BM Nguyen, D Hoffman, PY Delaunay, M Razeghi
Applied Physics Letters 91 (16), 163511, 2007
2522007
Very high quantum efficiency in type-II superlattice photodiode with cutoff of
BM Nguyen, D Hoffman, Y Wei, PY Delaunay, A Hood, M Razeghi
Applied Physics Letters 90 (23), 231108, 2007
1482007
High operating temperature midwave infrared photodiodes and focal plane arrays based on type-II InAs/GaSb superlattices
SA Pour, EK Huang, G Chen, A Haddadi, BM Nguyen, M Razeghi
Applied Physics Letters 98 (14), 143501, 2011
1282011
Minority electron unipolar photodetectors based on type II InAs/GaSb/AlSb superlattices for very long wavelength infrared detection
BM Nguyen, S Bogdanov, SA Pour, M Razeghi
Applied Physics Letters 95 (18), 183502, 2009
1182009
Near bulk-limited of long-wavelength infrared type-II superlattice photodiodes with polyimide surface passivation
A Hood, PY Delaunay, D Hoffman, BM Nguyen, Y Wei, M Razeghi, ...
Applied physics letters 90 (23), 233513, 2007
1182007
Background limited long wavelength infrared type-II InAs/GaSb superlattice photodiodes operating at 110 K
BM Nguyen, D Hoffman, EK Huang, PY Delaunay, M Razeghi
Applied Physics Letters 93 (12), 123502, 2008
1062008
High performance long wavelength infrared mega-pixel focal plane array based on type-II superlattices
P Manurkar, S Ramezani-Darvish, BM Nguyen, M Razeghi, J Hubbs
Applied Physics Letters 97 (19), 193505, 2010
982010
Passivation of type-II double heterostructure
PY Delaunay, A Hood, BM Nguyen, D Hoffman, Y Wei, M Razeghi
Applied Physics Letters 91 (9), 091112, 2007
932007
Background limited performance of long wavelength infrared focal plane arrays fabricated from M-structure InAs–GaSb superlattices
PY Delaunay, BM Nguyen, D Hoffman, EKW Huang, M Razeghi
IEEE Journal of Quantum Electronics 45 (2), 157-162, 2009
912009
Edge transport in the trivial phase of InAs/GaSb
F Nichele, HJ Suominen, M Kjaergaard, CM Marcus, E Sajadi, JA Folk, ...
New Journal of Physics 18 (8), 083005, 2016
862016
Band edge tunability of -structure for heterojunction design in Sb based type II superlattice photodiodes
BM Nguyen, D Hoffman, PY Delaunay, EKW Huang, M Razeghi, ...
Applied Physics Letters 93 (16), 163502, 2008
862008
Electric and magnetic tuning between the trivial and topological phases in InAs/GaSb double quantum wells
F Qu, AJA Beukman, S Nadj-Perge, M Wimmer, BM Nguyen, W Yi, ...
Physical Review Letters 115 (3), 036803, 2015
842015
Type-II M structure photodiodes: an alternative material design for mid-wave to long wavelength infrared regimes
BM Nguyen, M Razeghi, V Nathan, GJ Brown
Quantum Sensing and Nanophotonic Devices IV 6479, 64790S, 2007
842007
Surface leakage reduction in narrow band gap type-II antimonide-based superlattice photodiodes
EK Huang, D Hoffman, BM Nguyen, PY Delaunay, M Razeghi
Applied Physics Letters 94 (5), 053506, 2009
792009
Advances in mid-infrared detection and imaging: a key issues review
M Razeghi, BM Nguyen
Reports on Progress in Physics 77 (8), 082401, 2014
762014
High differential resistance type-II superlattice photodiodes for the long-wavelength infrared
A Hood, D Hoffman, BM Nguyen, PY Delaunay, E Michel, M Razeghi
Applied Physics Letters 89 (9), 093506, 2006
732006
Beryllium compensation doping of infrared superlattice photodiodes
D Hoffman, BM Nguyen, PY Delaunay, A Hood, M Razeghi, J Pellegrino
Applied Physics Letters 91 (14), 143507, 2007
712007
Demonstration of midinfrared type-II InAs/GaSb superlattice photodiodes grown on GaAs substrate
BM Nguyen, D Hoffman, EK Huang, S Bogdanov, PY Delaunay, ...
Applied Physics Letters 94 (22), 223506, 2009
692009
Growth and characterization of long-wavelength infrared type-II superlattice photodiodes on a 3-in GaSb wafer
BM Nguyen, G Chen, MA Hoang, M Razeghi
IEEE Journal of Quantum Electronics 47 (5), 686-690, 2011
632011
Tailoring lithiation behavior by interface and bandgap engineering at the nanoscale
Y Liu, XH Liu, BM Nguyen, J Yoo, JP Sullivan, ST Picraux, JY Huang, ...
Nano letters 13 (10), 4876-4883, 2013
592013
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