Henri Happy
Henri Happy
IEMN - University of Lille
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Cited by
Cited by
80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes
L Nougaret, H Happy, G Dambrine, V Derycke, JP Bourgoin, AA Green, ...
Applied Physics Letters 94 (24), 243505, 2009
Flexible gigahertz transistors derived from solution-based single-layer graphene
C Sire, F Ardiaca, S Lepilliet, JWT Seo, MC Hersam, G Dambrine, ...
Nano letters 12 (3), 1184-1188, 2012
Intrinsic current gain cutoff frequency of with carbon nanotube transistors
A Le Louarn, F Kapche, JM Bethoux, H Happy, G Dambrine, V Derycke, ...
Applied physics letters 90 (23), 233108, 2007
A new method for on wafer noise measurement
G Dambrine, H Happy, F Danneville, A Cappy
IEEE Transactions on Microwave Theory and Techniques 41 (3), 375-381, 1993
Lysozyme detection on aptamer functionalized graphene-coated SPR interfaces
P Subramanian, A Lesniewski, I Kaminska, A Vlandas, A Vasilescu, ...
Biosensors and Bioelectronics 50, 239-243, 2013
Improved Monte Carlo algorithm for the simulation of/spl delta/-doped AlInAs/GaInAs HEMTs
J Mateos, T González, D Pardo, V Hoel, H Happy, A Cappy
IEEE Transactions on Electron Devices 47 (1), 250-253, 2000
Gigahertz frequency flexible carbon nanotube transistors
N Chimot, V Derycke, MF Goffman, JP Bourgoin, H Happy, G Dambrine
Applied physics letters 91 (15), 153111, 2007
Scalable electrical compact modeling for graphene FET transistors
S Fregonese, M Magallo, C Maneux, H Happy, T Zimmer
IEEE Transactions on Nanotechnology 12 (4), 539-546, 2013
Single carbon nanotube transistor at GHz frequency
J Chaste, L Lechner, P Morfin, G Feve, T Kontos, JM Berroir, DC Glattli, ...
Nano letters 8 (2), 525-528, 2008
Microscopic noise modeling and macroscopic noise models: how good a connection?[FETs]
F Danneville, H Happy, G Dambrine, JM Belquin, A Cappy
IEEE transactions on electron devices 41 (5), 779-786, 1994
An 8-GHz f/sub t/carbon nanotube field-effect transistor for gigahertz range applications
JM Bethoux, H Happy, G Dambrine, V Derycke, M Goffman, JP Bourgoin
IEEE Electron Device Letters 27 (8), 681-683, 2006
Influence of the gate leakage current on the noise performance of MESFETs and MODFETs
F Danneville, G Dambrine, H Happy, P Tadyszak, A Cappy
Solid-state electronics 38 (5), 1081-1087, 1995
Gigahertz characterization of a single carbon nanotube
L Nougaret, G Dambrine, S Lepilliet, H Happy, N Chimot, V Derycke, ...
Applied Physics Letters 96 (4), 042109, 2010
The indium content in metamorphic InxAl1− xAs/InxGa1− xAs HEMTs on GaAs substrate: a new structure parameter
S Bollaert, Y Cordier, M Zaknoune, H Happy, V Hoel, S Lepilliet, D Théron, ...
Solid-State Electronics 44 (6), 1021-1027, 2000
Analogue switches made from boron nitride monolayers for application in 5G and terahertz communication systems
M Kim, E Pallecchi, R Ge, X Wu, G Ducournau, JC Lee, H Happy, ...
Nature Electronics 3 (8), 479-485, 2020
Mechanically robust 39 GHz cut-off frequency graphene field effect transistors on flexible substrates
W Wei, E Pallecchi, S Haque, S Borini, V Avramovic, A Centeno, Z Amaia, ...
Nanoscale 8 (29), 14097-14103, 2016
Design of narrow-band DBR planar filters in Si-BCB technology for millimeter-wave applications
G Prigent, E Rius, F Le Pennec, S Le Maguer, C Quendo, G Six, H Happy
IEEE Transactions on Microwave theory and techniques 52 (3), 1045-1051, 2004
Fabrication and characterization of low-loss TFMS on silicon substrate up to 220 GHz
G Six, G Prigent, E Rius, G Dambrine, H Happy
IEEE Transactions on microwave theory and techniques 53 (1), 301-305, 2005
Measurement techniques for RF nanoelectronic devices: new equipment to overcome the problems of impedance and scale mismatch
H Happy, K Haddadi, D Theron, T Lasri, G Dambrine
IEEE Microwave Magazine 15 (1), 30-39, 2014
Peroxynitrite activity of hemin-functionalized reduced graphene oxide
R Oprea, SF Peteu, P Subramanian, W Qi, E Pichonat, H Happy, ...
Analyst 138 (15), 4345-4352, 2013
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