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Aaron Arehart
Aaron Arehart
Assistant Research Professor of Electrical and Computer Engineering, The Ohio State University
Verified email at osu.edu
Title
Cited by
Cited by
Year
Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy
Z Zhang, E Farzana, AR Arehart, SA Ringel
Applied Physics Letters 108 (5), 052105, 2016
2582016
Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor
S Krishnamoorthy, Z Xia, C Joishi, Y Zhang, J McGlone, J Johnson, ...
Applied Physics Letters 111 (2), 023502, 2017
2352017
Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition
A Armstrong, AR Arehart, B Moran, SP DenBaars, UK Mishra, JS Speck, ...
Applied Physics Letters 84 (3), 374-376, 2004
2052004
Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon
A Armstrong, AR Arehart, D Green, UK Mishra, JS Speck, SA Ringel
Journal of Applied physics 98 (5), 053704, 2005
1852005
Influence of metal choice on (010) β-Ga2O3 Schottky diode properties
E Farzana, Z Zhang, PK Paul, AR Arehart, SA Ringel
Applied Physics Letters 110 (20), 202102, 2017
1312017
Effect of threading dislocation density on Schottky diode characteristics
AR Arehart, B Moran, JS Speck, UK Mishra, SP DenBaars, SA Ringel
Journal of applied physics 100 (2), 023709, 2006
1252006
Deep level optical and thermal spectroscopy of traps in -GaN grown by ammonia molecular beam epitaxy
AR Arehart, A Corrion, C Poblenz, JS Speck, UK Mishra, SA Ringel
Applied Physics Letters 93 (11), 112101, 2008
1032008
-Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz
Z Xia, H Xue, C Joishi, J Mcglone, NK Kalarickal, SH Sohel, M Brenner, ...
IEEE Electron Device Letters 40 (7), 1052-1055, 2019
1012019
Spatially-resolved spectroscopic measurements of Ec − 0.57 eV traps in AlGaN/GaN high electron mobility transistors
DW Cardwell, A Sasikumar, AR Arehart, SW Kaun, J Lu, S Keller, ...
Applied Physics Letters 102 (19), 193509, 2013
982013
Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy
E Farzana, E Ahmadi, JS Speck, AR Arehart, SA Ringel
Journal of Applied Physics 123 (16), 161410, 2018
862018
Trapping Effects in Si-Doped-Ga2O3MESFETs on an Fe-Doped-Ga2O3Substrate
JF McGlone, Z Xia, Y Zhang, C Joishi, S Lodha, S Rajan, SA Ringel, ...
IEEE Electron Device Letters 39 (7), 1042-1045, 2018
832018
Impact of Ga/N flux ratio on trap states in grown by plasma-assisted molecular-beam epitaxy
A Hierro, AR Arehart, B Heying, M Hansen, UK Mishra, SP DenBaars, ...
Applied physics letters 80 (5), 805-807, 2002
802002
Effects of applied bias and high field stress on the radiation response of GaN/AlGaN HEMTs
J Chen, YS Puzyrev, R Jiang, EX Zhang, MW McCurdy, DM Fleetwood, ...
IEEE Transactions on Nuclear Science 62 (6), 2423-2430, 2015
782015
Capture kinetics of electron traps in MBE‐Grown n‐GaN
A Hierro, AR Arehart, B Heying, M Hansen, JS Speck, UK Mishra, ...
physica status solidi (b) 228 (1), 309-313, 2001
752001
Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor
JM Johnson, Z Chen, JB Varley, CM Jackson, E Farzana, Z Zhang, ...
Physical Review X 9 (4), 041027, 2019
702019
Epitaxial growth of large area single-crystalline few-layer MoS2 with high space charge mobility of 192 cm2 V−1 s−1
L Ma, DN Nath, EW Lee, CH Lee, M Yu, A Arehart, S Rajan, Y Wu
Applied Physics Letters 105 (7), 072105, 2014
702014
Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors
AR Arehart, A Sasikumar, S Rajan, GD Via, B Poling, B Winningham, ...
Solid-State Electronics 80, 19-22, 2013
692013
Impact of deep level defects induced by high energy neutron radiation in -Ga2O3
E Farzana, MF Chaiken, TE Blue, AR Arehart, SA Ringel
APL Materials 7 (2), 022502, 2019
662019
Electrical characterization of n-type Al0.30Ga0.70N Schottky diodes
AR Arehart, AA Allerman, SA Ringel
Journal of Applied Physics 109 (11), 114506, 2011
662011
Evaluation of Low-Temperature Saturation Velocity in -(AlxGa1–x)2O3/Ga2O3 Modulation-Doped Field-Effect Transistors
Y Zhang, Z Xia, J Mcglone, W Sun, C Joishi, AR Arehart, SA Ringel, ...
IEEE Transactions on Electron Devices 66 (3), 1574-1578, 2019
652019
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