Xiaozhang Du
Xiaozhang Du
Unknown affiliation
Verified email at ttu.edu
Title
Cited by
Cited by
Year
The origin of deep-level impurity transitions in hexagonal boron nitride
XZ Du, J Li, JY Lin, HX Jiang
Applied Physics Letters 106 (2), 021110, 2015
502015
Optical and electrical properties of Mg-doped AlN nanowires grown by molecular beam epitaxy
AT Connie, S Zhao, SM Sadaf, I Shih, Z Mi, X Du, J Lin, H Jiang
Applied Physics Letters 106 (21), 213105, 2015
452015
Optical properties of strain-free AlN nanowires grown by molecular beam epitaxy on Si substrates
Q Wang, S Zhao, AT Connie, I Shih, Z Mi, T Gonzalez, MP Andrews, ...
Applied Physics Letters 104 (22), 223107, 2014
392014
The origins of near band-edge transitions in hexagonal boron nitride epilayers
XZ Du, J Li, JY Lin, HX Jiang
Applied Physics Letters 108 (5), 052106, 2016
332016
Characterization of bulk hexagonal boron nitride single crystals grown by the metal flux technique
JH Edgar, TB Hoffman, B Clubine, M Currie, XZ Du, JY Lin, HX Jiang
Journal of crystal growth 403, 110-113, 2014
282014
Large-scale growth of high-quality hexagonal boron nitride crystals at atmospheric pressure from an Fe–Cr flux
S Liu, R He, Z Ye, X Du, J Lin, H Jiang, B Liu, JH Edgar
Crystal growth & design 17 (9), 4932-4935, 2017
212017
Temperature dependence of the energy bandgap of two-dimensional hexagonal boron nitride probed by excitonic photoluminescence
XZ Du, CD Frye, JH Edgar, JY Lin, HX Jiang
Journal of Applied Physics 115 (5), 053503, 2014
182014
Layer number dependent optical properties of multilayer hexagonal BN epilayers
XZ Du, MR Uddin, J Li, JY Lin, HX Jiang
Applied Physics Letters 110 (9), 092102, 2017
152017
UV light-emitting diodes at 340 nm fabricated on a bulk GaN substrate
D Xiao-Zhang, L Hai, C Dun-Jun, X Xiang-Qian, Z Rong, Z You-Dou
Chinese Physics Letters 27 (8), 088105, 2010
92010
Temperature dependence of the energy bandgap of multi-layer hexagonal boron nitride
XZ Du, J Li, JY Lin, HX Jiang
Applied Physics Letters 111 (13), 132106, 2017
52017
Temperature dependence of polarized electroluminescence side emission from (0001)-oriented blue and violet light-emitting diodes
X Du, H Lu, P Han, R Zhang, Y Zheng
Applied Physics Letters 92 (20), 203504, 2008
52008
Erbium-doped AlN epilayers synthesized by metal-organic chemical vapor deposition
TM Al Tahtamouni, X Du, J Lin, H Jiang
Optical Materials Express 5 (3), 648-654, 2015
32015
InGaN/GaN multi-quantum-well planar metal-semiconductor-metal light-emitting diodes
C Miao, H Lu, XZ Du, Y Li, R Zhang, YD Zheng
Electronics Letters 44 (6), 441-443, 2008
32008
Erbium-doped a-plane GaN epilayers synthesized by metal-organic chemical vapor deposition
TM Al Tahtamouni, X Du, J Li, J Lin, H Jiang
Optical Materials Express 5 (2), 274-280, 2015
22015
Synthesis and photoluminescence properties of hexagonal BGaN alloys and quantum wells
QW Wang, R Uddin, XZ Du, J Li, JY Lin, HX Jiang
Applied Physics Express 12, 011002, 2018
2018
Optical study on hexagonal boron nitride
X Du
2018
p-Type AlN nanowires and AlN nanowire light emitting diodes on Si
S Zhao, AT Connie, BH Le, X Kong, H Guo, XZ Du, JY Lin, HX Jiang, ...
2015 IEEE Summer Topicals Meeting Series (SUM), 131-132, 2015
2015
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