Vertically self-organized InAs quantum box islands on GaAs (100) Q Xie, A Madhukar, P Chen, NP Kobayashi
Physical review letters 75 (13), 2542, 1995
1733 1995 “Nanoparticle-in-Alloy” approach to efficient thermoelectrics: silicides in SiGe N Mingo, D Hauser, NP Kobayashi, M Plissonnier, A Shakouri
Nano letters 9 (2), 711-715, 2009
496 2009 Ultrasmooth silver thin films deposited with a germanium nucleation layer VJ Logeeswaran, NP Kobayashi, MS Islam, W Wu, P Chaturvedi, ...
Nano letters 9 (1), 178-182, 2009
397 2009 Critical diameter for III-V nanowires grown on lattice-mismatched substrates LC Chuang, M Moewe, C Chase, NP Kobayashi, C Chang-Hasnain, ...
Applied physics letters 90 (4), 2007
325 2007 In situ , atomic force microscope studies of the evolution of InAs three‐dimensional islands on GaAs(001)NP Kobayashi, TR Ramachandran, P Chen, A Madhukar
Applied physics letters 68 (23), 3299-3301, 1996
292 1996 Electrical Performance and Scalability of Pt Dispersed SiO2 Nanometallic Resistance Switch BJ Choi, AC Torrezan, KJ Norris, F Miao, JP Strachan, MX Zhang, ...
Nano letters 13 (7), 3213-3217, 2013
218 2013 A perspective on nanowire photodetectors: current status, future challenges, and opportunities VJ Logeeswaran, J Oh, AP Nayak, AM Katzenmeyer, KH Gilchrist, ...
IEEE Journal of selected topics in quantum electronics 17 (4), 1002-1032, 2011
186 2011 GaN growth on Si (111) substrate using oxidized AlAs as an intermediate layer NP Kobayashi, JT Kobayashi, PD Dapkus, WJ Choi, AE Bond, X Zhang, ...
Applied physics letters 71 (24), 3569-3571, 1997
107 1997 Nitride memristors BJ Choi, JJ Yang, MX Zhang, KJ Norris, DAA Ohlberg, NP Kobayashi, ...
Applied Physics A 109, 1-4, 2012
79 2012 Dopant control by atomic layer deposition in oxide films for memristive switches JJ Yang, NP Kobayashi, JP Strachan, MX Zhang, DAA Ohlberg, ...
Chemistry of Materials 23 (2), 123-125, 2011
77 2011 A 14-ps full width at half maximum high-speed photoconductor fabricated with intersecting InP nanowires on an amorphous surface VJ Logeeswaran, A Sarkar, MS Islam, NP Kobayashi, J Straznicky, X Li, ...
Applied Physics A 91, 1-5, 2008
73 2008 Strained coherent InAs quantum box islands on GaAs (100): Size equalization, vertical self‐organization, and optical properties Q Xie, NP Kobayashi, TR Ramachandran, A Kalburge, P Chen, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996
73 1996 Atomic layer deposition of aluminum oxide on hydrophobic and hydrophilic surfaces NP Kobayashi, CL Donley, SY Wang, RS Williams
Journal of Crystal Growth 299 (1), 218-222, 2007
64 2007 Carrier relaxation and recombination in an InGaN/GaN quantum well probed with time-resolved cathodoluminescence X Zhang, DH Rich, JT Kobayashi, NP Kobayashi, PD Dapkus
Applied physics letters 73 (10), 1430-1432, 1998
61 1998 Epitaxial lateral overgrowth of GaN over NP Kobayashi, JT Kobayashi, X Zhang, PD Dapkus, DH Rich
Applied physics letters 74 (19), 2836-2838, 1999
57 1999 Nanowire-based opto-electronic device SY Wang, MS Islam, PJ Kuekes, N Kobayashi
US Patent 8,212,235, 2012
51 2012 Methods of making nano-scale structures having controlled size, nanowire structures and methods of making the nanowire structures N Kobayashi, W Wu, DR Stewart, S Sharma, SY Wang, RS Williams
US Patent 7,906,778, 2011
51 2011 Nanowire-based photovoltaic cells and methods for fabricating the same SY Wang, M Tan, N Kobayashi, D Houng
US Patent App. 12/243,740, 2009
48 2009 Photovoltaic Structure And Method Of Fabication Employing Nanowire In Stub SV Mathai, NP Kobayashi, SY Wang
US Patent App. 13/133,513, 2011
47 2011 Growth and characterization of indium phosphide single-crystal nanoneedles on microcrystalline silicon surfaces NP Kobayashi, SY Wang, C Santori, RS Williams
Applied Physics A 85, 1-6, 2006
45 2006 