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Martin Kittler
Martin Kittler
IHP Frankfurt (Oder) & BTU Cottbus-Senftenberg
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Cited by
Cited by
Year
Recombination activity of contaminated dislocations in silicon: A model describing electron-beam-induced current contrast behavior
V Kveder, M Kittler, W Schröter
Physical Review B 63 (11), 115208, 2001
3352001
Low threading dislocation density Ge deposited on Si (1 0 0) using RPCVD
Y Yamamoto, P Zaumseil, T Arguirov, M Kittler, B Tillack
Solid-State Electronics 60 (1), 2-6, 2011
1672011
Germanium tin: silicon photonics toward the mid-infrared
E Kasper, M Kittler, M Oehme, T Arguirov
Photonics Research 1 (2), 69-76, 2013
1582013
Influence of copper contamination on recombination activity of misfit dislocations in SiGe/Si epilayers: Temperature dependence of activity as a marker characterizing the …
M Kittler, C Ulhaq‐Bouillet, V Higgs
Journal of Applied Physics 78 (7), 4573-4583, 1995
1381995
GeSn heterojunction LEDs on Si substrates
M Oehme, K Kostecki, T Arguirov, G Mussler, K Ye, M Gollhofer, M Schmid, ...
IEEE Photonics Technology Letters 26 (2), 187-189, 2013
1042013
Recombination properties of structurally well defined NiSi2 precipitates in silicon
M Kittler, J Lärz, W Seifert, M Seibt, W Schröter
Applied physics letters 58 (9), 911-913, 1991
991991
Influence of dislocation density on recombination at grain boundaries in multicrystalline silicon
W Seifert, G Morgenstern, M Kittler
Semiconductor Science and Technology 8 (9), 1687, 1993
931993
GeSn/Ge multiquantum well photodetectors on Si substrates
M Oehme, D Widmann, K Kostecki, P Zaumseil, B Schwartz, M Gollhofer, ...
Optics letters 39 (16), 4711-4714, 2014
912014
Residual stress in Si nanocrystals embedded in a SiO2 matrix
T Arguirov, T Mchedlidze, M Kittler, R Rölver, B Berghoff, M Först, ...
Applied Physics Letters 89 (5), 2006
882006
Regular dislocation networks in silicon as a tool for nanostructure devices used in optics, biology, and electronics
M Kittler, X Yu, T Mchedlidze, T Arguirov, OF Vyvenko, W Seifert, ...
Small 3 (6), 964-973, 2007
802007
Assessing the performance of two-dimensional dopant profiling techniques
N Duhayon, P Eyben, M Fouchier, T Clarysse, W Vandervorst, D Álvarez, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004
772004
Silicon solar cells with antireflection diamond-like carbon and silicon carbide films
NI Klyui, VG Litovchenko, AG Rozhin, VN Dikusha, M Kittler, W Seifert
Solar energy materials and solar cells 72 (1-4), 597-603, 2002
702002
Room-temperature luminescence and electron-beam-induced current (EBIC) recombination behaviour of crystal defects in multicrystalline silicon
M Kittler, W Seifert, T Arguirov, I Tarasov, S Ostapenko
Solar Energy Materials and Solar Cells 72 (1-4), 465-472, 2002
692002
Electroluminescence of GeSn/Ge MQW LEDs on Si substrate
B Schwartz, M Oehme, K Kostecki, D Widmann, M Gollhofer, R Koerner, ...
Optics letters 40 (13), 3209-3212, 2015
602015
Silicon‐based light emitters
M Kittler, M Reiche, T Arguirov, W Seifert, X Yu
physica status solidi (a) 203 (4), 802-809, 2006
592006
On the sensitivity of the EBIC technique as applied to defect investigations in silicon
M Kittler, W Seifert
physica status solidi (a) 66 (2), 573-583, 1981
581981
EBIC and luminescence studies of defects in solar cells
O Breitenstein, J Bauer, M Kittler, T Arguirov, W Seifert
Scanning: The Journal of Scanning Microscopies 30 (4), 331-338, 2008
572008
On the origin of EBIC defect contrast in silicon. A reflection on injection and temperature dependent investigations
M Kittler, W Seifert
physica status solidi (a) 138 (2), 687-693, 1993
571993
Recombination activity of misfit dislocations in silicon
M Kittler, W Seifert, V Higgs
physica status solidi (a) 137 (2), 327-335, 1993
561993
Silicon-based light emission after ion implantation
M Kittler, T Arguirov, A Fischer, W Seifert
Optical Materials 27 (5), 967-972, 2005
552005
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