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Arun V. Thathachary
Arun V. Thathachary
PhD., Device Engineer, Intel Corp.
Verified email at intel.com
Title
Cited by
Cited by
Year
A steep-slope transistor based on abrupt electronic phase transition
N Shukla, AV Thathachary, A Agrawal, H Paik, A Aziz, DG Schlom, ...
Nature communications 6 (1), 7812, 2015
3722015
Fermi level depinning at the germanium Schottky interface through sulfur passivation
AV Thathachary, KN Bhat, N Bhat, MS Hegde
Applied Physics Letters 96 (15), 2010
812010
Electron Transport in Multigate InxGa1–x As Nanowire FETs: From Diffusive to Ballistic Regimes at Room Temperature
AV Thathachary, N Agrawal, L Liu, S Datta
Nano letters 14 (2), 626-633, 2014
382014
Impact of Sidewall Passivation and Channel Composition on InxGa1-xAs FinFET Performance
AV Thathachary, G Lavallee, M Cantoro, KK Bhuwalka, YC Heo, S Maeda, ...
IEEE Electron Device Letters 36 (2), 117-119, 2014
242014
Enhancement mode strained (1.3%) germanium quantum well FinFET (W Fin= 20nm) with high mobility (μ Hole= 700 cm 2/Vs), low EOT (∼ 0.7 nm) on bulk silicon substrate
SD A. Agrawal, M Barth, GB Rayner, Arun V T, C Eichfeld, G Lavallee, S-Y Yu ...
Electron Devices Meeting (IEDM), 2014 IEEE International, 16.4. 1-16.4. 4, 2014
20*2014
Impact of Varying Indium(x) Concentration and Quantum Confinement on PBTI Reliability in InxGa1-xAs FinFET
N Agrawal, AV Thathachary, S Mahapatra, S Datta
IEEE Electron Device Letters 36 (2), 120-122, 2014
172014
Indium arsenide (InAs) single and dual quantum-well heterostructure FinFETs
AV Thathachary, N Agrawal, KK Bhuwalka, M Cantoro, YC Heo, ...
2015 Symposium on VLSI Technology (VLSI Technology), T208-T209, 2015
162015
A steep-slope transistor based on abrupt electronic phase transition Nat
N Shukla, AV Thathachary, A Agrawal, H Paik, A Aziz, DG Schlom, ...
Commun 6, 7812, 2015
162015
Investigation of InxGa1−xAs FinFET architecture with varying indium (x) concentration and quantum confinement
VT Arun, N Agrawal, G Lavallee, M Cantoro, SS Kim, DW Kim, S Datta
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014
112014
Impact of fin width scaling on carrier transport in III-V FinFETs
AV Thathachary, L Liu, S Datta
71st Device Research Conference, 17-18, 2013
92013
(Keynote) III-V Compound Semiconductor Field Effect Transistors for Low Power Digital Logic
S Datta, AV Thathachary, L Liu, E Hwang, A Agrawal, N Agrawal
ECS Transactions 53 (3), 3, 2013
42013
Physics, fabrication and characterization of III-V multi-gate FETs for low power electronics
AV Thathachary
The Pennsylvania State University, 2015
22015
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