| -Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz Z Xia, H Xue, C Joishi, J Mcglone, NK Kalarickal, SH Sohel, M Brenner, ... IEEE Electron Device Letters 40 (7), 1052-1055, 2019 | 169 | 2019 |
| Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field Z Xia, H Chandrasekar, W Moore, C Wang, AJ Lee, J McGlone, ... Applied Physics Letters 115 (25), 2019 | 144 | 2019 |
| High electron density β-(Al0. 17Ga0. 83) 2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer NK Kalarickal, Z Xia, JF McGlone, Y Liu, W Moore, AR Arehart, SA Ringel, ... Journal of Applied Physics 127 (21), 2020 | 98 | 2020 |
| β-(Al0.18Ga0.82)2O3/Ga2O3 Double Heterojunction Transistor With Average Field of 5.5 MV/cm NK Kalarickal, Z Xia, HL Huang, W Moore, Y Liu, M Brenner, J Hwang, ... IEEE Electron Device Letters 42 (6), 899-902, 2021 | 88 | 2021 |
| Mechanism of Si doping in plasma assisted MBE growth of β-Ga2O3 NK Kalarickal, Z Xia, J McGlone, S Krishnamoorthy, W Moore, M Brenner, ... Applied Physics Letters 115 (15), 2019 | 70 | 2019 |
| Electrostatic engineering using extreme permittivity materials for ultra-wide bandgap semiconductor transistors NK Kalarickal, Z Feng, AFMAU Bhuiyan, Z Xia, W Moore, JF McGlone, ... IEEE Transactions on Electron Devices 68 (1), 29-35, 2020 | 62 | 2020 |
| Design of transistors using high-permittivity materials Z Xia, C Wang, NK Kalarickal, S Stemmer, S Rajan IEEE Transactions on Electron Devices 66 (2), 896-900, 2019 | 58 | 2019 |
| Mg acceptor doping in MOCVD (010) β-Ga2O3 Z Feng, AFM Bhuiyan, NK Kalarickal, S Rajan, H Zhao Applied Physics Letters 117 (22), 2020 | 56 | 2020 |
| Atomic scale investigation of aluminum incorporation, defects, and phase stability in β-(AlxGa1− x) 2O3 films JM Johnson, HL Huang, M Wang, S Mu, JB Varley, AFM Uddin Bhuiyan, ... APL Materials 9 (5), 2021 | 54 | 2021 |
| β-Ga2O3 Schottky barrier diodes with 4.1 MV/cm field strength by deep plasma etching field-termination S Dhara, NK Kalarickal, A Dheenan, C Joishi, S Rajan Applied Physics Letters 121 (20), 2022 | 35 | 2022 |
| Planar and three-dimensional damage-free etching of β-Ga2O3 using atomic gallium flux NK Kalarickal, A Fiedler, S Dhara, HL Huang, AFM Bhuiyan, MW Rahman, ... Applied Physics Letters 119 (12), 2021 | 27 | 2021 |
| Integration of high permittivity BaTiO3 with AlGaN/GaN for near-theoretical breakdown field kV-class transistors MW Rahman, NK Kalarickal, H Lee, T Razzak, S Rajan Applied Physics Letters 119 (19), 2021 | 26 | 2021 |
| Nanoscale etching of perovskite oxides for field effect transistor applications J Cheng, H Yang, C Wang, N Combs, C Freeze, O Shoron, W Wu, ... Journal of Vacuum Science & Technology B 38 (1), 2020 | 18 | 2020 |
| β-Ga2O3 trench Schottky diodes by low-damage Ga-atomic beam etching S Dhara, NK Kalarickal, A Dheenan, SI Rahman, C Joishi, S Rajan Applied Physics Letters 123 (2), 2023 | 17 | 2023 |
| Spectral Measurement of the Breakdown Limit of and Tunnel Ionization of Self-Trapped Excitons and Holes MMR Adnan, D Verma, Z Xia, NK Kalarickal, S Rajan, RC Myers Physical Review Applied 16 (3), 034011, 2021 | 16 | 2021 |
| High-Current Perovskite Oxide BaTiO3/BaSnO3 Heterostructure Field Effect Transistors J Cheng, C Wang, C Freeze, O Shoron, N Combs, H Yang, NK Kalarickal, ... IEEE Electron Device Letters 41 (4), 621-624, 2020 | 16 | 2020 |
| High-permittivity dielectric edge termination for vertical high voltage devices HS Lee, NK Kalarickal, MW Rahman, Z Xia, W Moore, C Wang, S Rajan Journal of Computational Electronics 19, 1538-1545, 2020 | 14 | 2020 |
| β-Ga2O3 MESFETs with insulating Mg-doped buffer grown by plasma-assisted molecular beam epitaxy AV Dheenan, JF McGlone, NK Kalarickal, HL Huang, M Brenner, J Hwang, ... Applied Physics Letters 121 (11), 2022 | 13 | 2022 |
| Three-step field-plated β-Ga2O3 Schottky barrier diodes and heterojunction diodes with sub-1 V turn-on and kilovolt-class breakdown A Gilankar, AE Islam, MR McCartney, A Katta, N Das, DJ Smith, ... Applied Physics Express 17 (4), 046501, 2024 | 9 | 2024 |
| Demonstration of MOCVD based in situ etching of β-Ga2O3 using TEGa A Katta, F Alema, W Brand, A Gilankar, A Osinsky, NK Kalarickal Journal of Applied Physics 135 (7), 2024 | 8 | 2024 |
Siddharth RajanElectrical and Computer Engineering, Ohio State UniversityVerified email at ece.osu.edu
