Trinh Hai Dang
Trinh Hai Dang
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The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition metal-oxide …
HD Trinh, EY Chang, PW Wu, YY Wong, CT Chang, YF Hsieh, CC Yu, ...
Applied Physics Letters 97 (4), 042903, 2010
Fabrication and characterization of n-In0. 4Ga0. 6N/p-Si solar cell
BT Tran, EY Chang, HD Trinh, CT Lee, KC Sahoo, KL Lin, MC Huang, ...
Solar Energy Materials and Solar Cells 102, 208-211, 2012
Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltage
CT Chang, TH Hsu, EY Chang, YC Chen, HD Trinh, KJ Chen
Electronics letters 46 (18), 1280-1281, 2010
High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate
SH Tang, EY Chang, M Hudait, JS Maa, CW Liu, GL Luo, HD Trinh, YH Su
Applied Physics Letters 98 (16), 161905, 2011
Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
QH Luc, EY Chang, HD Trinh, YC Lin, HQ Nguyen, YY Wong, HB Do, ...
IEEE Transactions on Electron Devices 61 (8), 2774-2778, 2014
Electrical Characterization of /n-InAs Metal–Oxide–Semiconductor Capacitors With Various Surface Treatments
HD Trinh, G Brammertz, EY Chang, CI Kuo, CY Lu, YC Lin, HQ Nguyen, ...
IEEE Electron Device Letters 32 (6), 752-754, 2011
Effects of wet chemical and trimethyl aluminum treatments on the interface properties in atomic layer deposition of Al2O3 on InAs
HD Trinh, EY Chang, YY Wong, CC Yu, CY Chang, YC Lin, HQ Nguyen, ...
Japanese Journal of Applied Physics 49 (11R), 111201, 2010
Oxide film scheme for RRAM structure
TH Dang, HL Lin, CY Tsai, CS Tsai, RL Lee
US Patent 9,431,609, 2016
Effect of postdeposition annealing temperatures on electrical characteristics of molecular-beam-deposited HfO2 on n-InAs/InGaAs metal–oxide–semiconductor capacitors
HD Trinh, YC Lin, HC Wang, CH Chang, K Kakushima, H Iwai, ...
Applied Physics Express 5 (2), 021104, 2012
High K scheme to improve retention performance of resistive random access memory (RRAM)
TH Dang, HL Lin, CW Liang, CY Tsai, CS Tsai
US Patent 10,193,065, 2019
Band alignment parameters of Al2O3/InSb metal–oxide–semiconductor structure and their modification with oxide deposition temperatures
HD Trinh, MT Nguyen, YC Lin, Q Van Duong, HQ Nguyen, EY Chang
Applied Physics Express 6 (6), 061202, 2013
Resistive random access memory (RRAM) structure
HD Trinh, CS Tsai, CW Liang, CY Tsai, HL Lin, Y Chin-Chieh, WT Chu
US Patent 9,647,207, 2017
Resistive ram structure and method of fabrication thereof
HD Trinh, CY Tsai, HL Lin
US Patent 9,978,938, 2018
Electrical Characteristics of MOSCAPs and the Effect of Postdeposition Annealing Temperatures
HD Trinh, YC Lin, EY Chang, CT Lee, SY Wang, HQ Nguyen, YS Chiu, ...
IEEE transactions on electron devices 60 (5), 1555-1560, 2013
Crystalline layer for passivation of III-N surface
HC Chiu, TH Dang, HL Lin, CY Tsai, CS Tsai, X Chen
US Patent 9,130,026, 2015
Electrical Characterization and Materials Stability Analysis ofComposite Oxides on n-MOS Capacitors With Different Annealing Temperatures
YC Lin, HD Trinh, TW Chuang, H Iwai, K Kakushima, P Ahmet, CH Lin, ...
IEEE electron device letters 34 (10), 1229-1231, 2013
Threading dislocation blocking in metamorphic InGaAs/GaAs for growing high-quality In0. 5Ga0. 5As and In0. 3Ga0. 7As on GaAs substrate by using metal organic chemical vapor …
HQ Nguyen, EY Chang, HW Yu, HD Trinh, CF Dee, YY Wong, CH Hsu, ...
Applied Physics Express 5 (5), 055503, 2012
Demonstrating 1 nm-oxide-equivalent-thickness HfO2/InSb structure with unpinning Fermi level and low gate leakage current density
HD Trinh, YC Lin, MT Nguyen, HQ Nguyen, QV Duong, QH Luc, SY Wang, ...
Applied Physics Letters 103 (14), 142903, 2013
RRAM cell bottom electrode formation
TH Dang, HL Lin, KW Cheng, CY Tsai, CS Tsai, RL Lee
US Patent 9,577,191, 2017
Effect of annealing processes on the electrical properties of the atomic layer deposition Al2O3/In0. 53Ga0. 47As metal oxide semiconductor capacitors
QH Luc, EY Chang, HD Trinh, HQ Nguyen, BT Tran, YC Lin
Japanese Journal of Applied Physics 53 (4S), 04EF04, 2014
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