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Jon P. McCandless
Jon P. McCandless
Cornell University, Air Force Research Laboratory
Verified email at us.af.mil - Homepage
Title
Cited by
Cited by
Year
Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage
KD Chabak, N Moser, AJ Green, DE Walker Jr, SE Tetlak, E Heller, ...
Applied Physics Letters 109 (21), 213501, 2016
3182016
-Ga2O3 MOSFETs for Radio Frequency Operation
AJ Green, KD Chabak, M Baldini, N Moser, R Gilbert, RC Fitch, G Wagner, ...
IEEE Electron Device Letters 38 (6), 790-793, 2017
2502017
Ge-Doped -Ga2O3 MOSFETs
N Moser, J McCandless, A Crespo, K Leedy, A Green, A Neal, S Mou, ...
IEEE Electron Device Letters 38 (6), 775-778, 2017
1692017
Recessed-Gate Enhancement-Mode -Ga2O3 MOSFETs
KD Chabak, JP McCandless, NA Moser, AJ Green, K Mahalingam, ...
IEEE Electron device letters 39 (1), 67-70, 2017
1662017
Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition
KD Leedy, KD Chabak, V Vasilyev, DC Look, JJ Boeckl, JL Brown, ...
Applied Physics Letters 111 (1), 012103, 2017
1342017
High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge
NA Moser, JP McCandless, A Crespo, KD Leedy, AJ Green, ER Heller, ...
Applied Physics Letters 110 (14), 143505, 2017
752017
Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy
P Vogt, FVE Hensling, K Azizie, CS Chang, D Turner, J Park, ...
Apl Materials 9 (3), 031101, 2021
302021
Toward realization of Ga2O3for power electronics applications
G Jessen, K Chabak, A Green, J McCandless, S Tetlak, K Leedy, R Fitch, ...
2017 75th Annual Device Research Conference (DRC), 1-2, 2017
242017
Gate-recessed, laterally-scaled β-Ga2O3MOSFETs with high-voltage enhancement-mode operation
K Chabak, A Green, N Moser, S Tetlak, J McCandless, K Leedy, R Fitch, ...
2017 75th Annual Device Research Conference (DRC), 1-2, 2017
232017
Significantly Reduced Thermal Conductivity in Beta-(Al0. 1Ga0. 9) 2O3/Ga2O3 Superlattices
Z Cheng, N Tanen, C Chang, J Shi, J McCandless, D Muller, D Jena, ...
Applied Physics Letters 115 (092105), 2019
202019
Thermal stability of epitaxial α-Ga2O3 and (Al,Ga)2O3 layers on m-plane sapphire
JP McCandless, CS Chang, K Nomoto, J Casamento, V Protasenko, ...
Applied Physics Letters 119 (6), 062102, 2021
172021
Intra- and inter-conduction band optical absorption processes in β-Ga2O3
A Singh, O Koksal, N Tanen, J McCandless, D Jena, H Xing, H Peelaers, ...
Applied Physics Letters 117 (7), 072103, 2020
102020
Gallium oxide technologies and applications
G Jessen, K Chabak, A Green, N Moser, J McCandless, K Leedy, ...
2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1-4, 2017
82017
Ultrafast dynamics of gallium vacancy charge states in
A Singh, O Koksal, N Tanen, J McCandless, D Jena, HG Xing, H Peelaers, ...
Physical Review Research 3 (2), 023154, 2021
52021
Controlled Si doping of β-Ga2O3 by molecular beam epitaxy
JP McCandless, V Protasenko, BW Morell, E Steinbrunner, AT Neal, ...
Applied Physics Letters 121 (7), 072108, 2022
42022
Heterogeneous integration of low-temperature metal-oxide TFTs
ML Schuette, AJ Green, KD Leedy, JP McCandless, GH Jessen
Oxide-based Materials and Devices VIII 10105, 167-173, 2017
42017
Extending the kinetic and thermodynamic limits of molecular-beam epitaxy utilizing suboxide sources or metal-oxide-catalyzed epitaxy
P Vogt, FVE Hensling, K Azizie, JP McCandless, J Park, K DeLello, ...
Physical Review Applied 17 (3), 034021, 2022
32022
Recent Progress of β-Ga2O3 MOSFETs for Power Electronic Applications
NA Moser, RC Fitch, DE Walker, AJ Green, KD Chabak, E Heller, ...
Air Force Research Laboratory Wright Patterson Air Force Base United States, 2017
22017
Device development of gallium oxide MOSFETs grown by MOVPE on native substrates for high-voltage applications
NA Moser, KD Chabak, AJ Green, DE Walker Jr, SE Tetlak, E Heller, ...
generations 2, 4, 2017
22017
Quantum Transport in Epitaxial Ultra Wide Bandgap Aluminum Gallium Oxide Tunnel Heterostructures
N Tanen, C Chang, V Protasenko, J McCandless, D Muller, H Xing, ...
Bulletin of the American Physical Society 65, 2020
12020
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