| 930 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template TA Growden, EM Cornuelle, DF Storm, W Zhang, ER Brown, LM Whitaker, ... Applied Physics Letters 114 (20), 2019 | 21 | 2019 |
| Transistors for 100-300GHz Wireless M Rodwell, B Markman, Y Fang, L Whitaker, HY Tseng, ASH Ahmed ESSDERC 2021-IEEE 51st European Solid-State Device Research Conference …, 2021 | 3 | 2021 |
| Lg = 40nm Composite Channel MOS-HEMT Exhibiting fτ = 420 GHz, fmax = 562 GHz B Markman, STŠ Brunelli, M Guidry, L Whitaker, MJW Rodwell 2021 Device Research Conference (DRC), 1-2, 2021 | 2 | 2021 |
| Self-Aligned InGaAs Channel MOS-HEMTs for High Frequency Applications L Whitaker, B Markman, MJW Rodwell 2023 Device Research Conference (DRC), 1-2, 2023 | | 2023 |
| Pulsed characteristics for high current, large area GaN/Ain resonant tunneling diodes TA Growden, DF Storm, EM Cornuelle, LM Whitaker, BP Downey, ... 2019 Device Research Conference (DRC), 145-146, 2019 | | 2019 |
| OH 45435, USA TA Growden, EM Cornuelle, DF Storm, W Zhang, ER Brown, LM Whitaker, ... | | |
