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Yiyin Zhou
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An optically pumped 2.5 μm GeSn laser on Si operating at 110 K
S Al-Kabi, SA Ghetmiri, J Margetis, T Pham, Y Zhou, W Dou, B Collier, ...
Applied Physics Letters 109 (17), 2016
2392016
Si-based GeSn lasers with wavelength coverage of 2–3 μm and operating temperatures up to 180 K
J Margetis, S Al-Kabi, W Du, W Dou, Y Zhou, T Pham, P Grant, S Ghetmiri, ...
ACs Photonics 5 (3), 827-833, 2017
1912017
Electrically injected GeSn lasers on Si operating up to 100 K
Y Zhou, Y Miao, S Ojo, H Tran, G Abernathy, JM Grant, S Amoah, ...
Optica 7 (8), 924-928, 2020
1602020
Si-based GeSn photodetectors toward mid-infrared imaging applications
H Tran, T Pham, J Margetis, Y Zhou, W Dou, PC Grant, JM Grant, ...
ACS Photonics 6 (11), 2807-2815, 2019
1572019
Optically pumped GeSn lasers operating at 270 K with broad waveguide structures on Si
Y Zhou, W Dou, W Du, S Ojo, H Tran, SA Ghetmiri, J Liu, G Sun, R Soref, ...
Acs Photonics 6 (6), 1434-1441, 2019
1302019
Investigation of GeSn strain relaxation and spontaneous composition gradient for low-defect and high-Sn alloy growth
W Dou, M Benamara, A Mosleh, J Margetis, P Grant, Y Zhou, S Al-Kabi, ...
Scientific reports 8 (1), 5640, 2018
1242018
Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates
W Du, Y Zhou, SA Ghetmiri, A Mosleh, BR Conley, A Nazzal, RA Soref, ...
Applied Physics Letters 104 (24), 2014
1012014
Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
Y Zhou, W Dou, W Du, T Pham, SA Ghetmiri, S Al-Kabi, A Mosleh, M Alher, ...
Journal of Applied Physics 120 (2), 2016
882016
Optically pumped lasing at 3 μm from compositionally graded GeSn with tin up to 22.3%
W Dou, Y Zhou, J Margetis, SA Ghetmiri, S Al-Kabi, W Du, J Liu, G Sun, ...
Optics letters 43 (19), 4558-4561, 2018
762018
All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K
J Margetis, Y Zhou, W Dou, PC Grant, B Alharthi, W Du, A Wadsworth, ...
Applied Physics Letters 113 (22), 2018
552018
Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics
SA Ghetmiri, Y Zhou, J Margetis, S Al-Kabi, W Dou, A Mosleh, W Du, ...
Optics Letters 42 (3), 387-390, 2017
522017
Ge1−xSnx alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration
TD Eales, IP Marko, S Schulz, E O’Halloran, S Ghetmiri, W Du, Y Zhou, ...
Scientific reports 9 (1), 14077, 2019
442019
Investigation of optical transitions in a SiGeSn/GeSn/SiGeSn single quantum well structure
W Du, SA Ghetmiri, J Margetis, S Al-Kabi, Y Zhou, J Liu, G Sun, RA Soref, ...
Journal of Applied Physics 122 (12), 2017
372017
Electrically injected GeSn lasers with peak wavelength up to 2.7 μm
Y Zhou, S Ojo, CW Wu, Y Miao, H Tran, JM Grant, G Abernathy, S Amoah, ...
Photonics Research 10 (1), 222-229, 2022
352022
Direct bandgap type-I GeSn/GeSn quantum well on a GeSn-and Ge-buffered Si substrate
PC Grant, J Margetis, Y Zhou, W Dou, G Abernathy, A Kuchuk, W Du, B Li, ...
AIP Advances 8 (2), 2018
272018
Study of Si-based GeSn optically pumped lasers with micro-disk and ridge waveguide structures
W Du, QM Thai, J Chrétien, M Bertrand, L Casiez, Y Zhou, J Margetis, ...
Frontiers in Physics 7, 147, 2019
252019
Si based GeSn light emitter: mid-infrared devices in Si photonics
SQ Yu, SA Ghetmiri, W Du, J Margetis, Y Zhou, A Mosleh, S Al-Kabi, ...
Silicon Photonics X 9367, 146-153, 2015
242015
Structural and optical characteristics of GeSn quantum wells for silicon-based mid-infrared optoelectronic applications
W Dou, SA Ghetmiri, S Al-Kabi, A Mosleh, Y Zhou, B Alharthi, W Du, ...
Journal of Electronic Materials 45, 6265-6272, 2016
222016
Study of direct bandgap type-I GeSn/GeSn double quantum well with improved carrier confinement
PC Grant, J Margetis, W Du, Y Zhou, W Dou, G Abernathy, A Kuchuk, B Li, ...
Nanotechnology 29 (46), 465201, 2018
182018
ACS Photonics 5, 827 (2018)
J Margetis, S Al-Kabi, W Du, W Dou, Y Zhou, T Pham, P Grant, S Ghetmiri, ...
14
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