| Ga-assisted MBE growth of GaAs nanowires using thin HSQ layer T Rieger, S Heiderich, S Lenk, MI Lepsa, D Grützmacher Journal of Crystal Growth 353 (1), 39-46, 2012 | 101 | 2012 |
| Molecular beam epitaxy growth of GaAs/InAs core–shell nanowires and fabrication of InAs nanotubes T Rieger, M Luysberg, T Schäpers, D Grützmacher, MI Lepsa Nano letters 12 (11), 5559-5564, 2012 | 93 | 2012 |
| Self-catalyzed VLS grown InAs nanowires with twinning superlattices T Grap, T Rieger, C Blömers, T Schäpers, D Grützmacher, MI Lepsa Nanotechnology 24 (33), 335601, 2013 | 76 | 2013 |
| Realization of nanoscaled tubular conductors by means of GaAs/InAs core/shell nanowires C Blömers, T Rieger, P Zellekens, F Haas, MI Lepsa, H Hardtdegen, ... Nanotechnology 24 (3), 035203, 2012 | 66 | 2012 |
| Flux periodic magnetoconductance oscillations in GaAs/InAs core/shell nanowires Ö Gül, N Demarina, C Blömers, T Rieger, H Lüth, MI Lepsa, ... Physical Review B 89 (4), 045417, 2014 | 65 | 2014 |
| Nanoimprint and selective-area MOVPE for growth of GaAs/InAs core/shell nanowires F Haas, K Sladek, A Winden, M Von der Ahe, TE Weirich, T Rieger, H Lüth, ... Nanotechnology 24 (8), 085603, 2013 | 59 | 2013 |
| Misfit dislocation free InAs/GaSb core–shell nanowires grown by molecular beam epitaxy T Rieger, D Grützmacher, MI Lepsa Nanoscale 7 (1), 356-364, 2015 | 53 | 2015 |
| Controlled wurtzite inclusions in self-catalyzed zinc blende III–V semiconductor nanowires T Rieger, MI Lepsa, T Schäpers, D Grützmacher Journal of crystal growth 378, 506-510, 2013 | 44 | 2013 |
| Axial strain in GaAs/InAs core-shell nanowires A Biermanns, T Rieger, G Bussone, U Pietsch, D Grützmacher, ... Applied physics letters 102 (4), 043109, 2013 | 38 | 2013 |
| Crystal phase selective growth in GaAs/InAs core–shell nanowires T Rieger, T Schäpers, D Grützmacher, MI Lepsa Crystal Growth & Design 14 (3), 1167-1174, 2014 | 34 | 2014 |
| MBE growth of Al/InAs and Nb/InAs superconducting hybrid nanowire structures NA Güsken, T Rieger, P Zellekens, B Bennemann, E Neumann, MI Lepsa, ... Nanoscale 9 (43), 16735-16741, 2017 | 33 | 2017 |
| Crystal phase transformation in self-assembled InAs nanowire junctions on patterned Si substrates T Rieger, D Rosenbach, D Vakulov, S Heedt, T Schäpers, ... Nano letters 16 (3), 1933-1941, 2016 | 32 | 2016 |
| Si substrate preparation for the VS and VLS growth of InAs nanowires T Rieger, D Grützmacher, MI Lepsa physica status solidi (RRL)-Rapid Research Letters 7 (10), 840-844, 2013 | 26 | 2013 |
| Giant Magnetoconductance Oscillations in Hybrid Superconductor− Semiconductor Core/Shell Nanowire Devices O Gül, HY Günel, H Lüth, T Rieger, T Wenz, F Haas, M Lepsa, ... Nano letters 14 (11), 6269-6274, 2014 | 22 | 2014 |
| Distribution control of 1.55 μm InAs quantum dots down to small numbers on truncated InP pyramids grown by selective area metal organic vapor phase epitaxy H Wang, J Yuan, T Rieger, PJ van Veldhoven, P Nouwens, TJ Eijkemans, ... Applied Physics Letters 94 (14), 143103, 2009 | 16 | 2009 |
| Evolution and characteristics of GaN nanowires produced via maskless reactive ion etching A Haab, M Mikulics, E Sutter, J Jin, T Stoica, B Kardynal, T Rieger, ... Nanotechnology 25 (25), 255301, 2014 | 15 | 2014 |
| Silicon tunnel FET with average subthreshold slope of 55mV/dec at low drain currents K Narimani, S Glass, T Rieger, P Bernardy, N von den Driesch, S Mantl, ... Ultimate Integration on Silicon (EUROSOI-ULIS), 2017 Joint International …, 2017 | 14 | 2017 |
| Electron Interference in Hall Effect Measurements on GaAs/InAs Core/Shell Nanowires F Haas, P Zellekens, M Lepsa, T Rieger, D Grützmacher, H Lüth, ... Nano letters 17 (1), 128-135, 2016 | 13 | 2016 |
| Electronic Properties of Complex Self‐Assembled InAs Nanowire Networks S Heedt, D Vakulov, T Rieger, D Rosenbach, S Trellenkamp, ... Advanced Electronic Materials 2 (6), 1500460, 2016 | 13 | 2016 |
| Angle-dependent magnetotransport in GaAs/InAs core/shell nanowires F Haas, T Wenz, P Zellekens, N Demarina, T Rieger, M Lepsa, ... Scientific reports 6, 24573, 2016 | 12 | 2016 |
