| Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x) 2O3/Ga2O3 heterostructures Y Zhang, A Neal, Z Xia, C Joishi, JM Johnson, Y Zheng, S Bajaj, ... Applied Physics Letters 112 (17), 2018 | 339 | 2018 |
| The 2020 UV emitter roadmap H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ... Journal of Physics D: Applied Physics 53 (50), 503001, 2020 | 323 | 2020 |
| Modulation-doped β-(Al0. 2Ga0. 8) 2O3/Ga2O3 field-effect transistor S Krishnamoorthy, Z Xia, C Joishi, Y Zhang, J McGlone, J Johnson, ... Applied Physics Letters 111 (2), 2017 | 288 | 2017 |
| MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature Y Zhang, F Alema, A Mauze, OS Koksaldi, R Miller, A Osinsky, JS Speck APL Materials 7 (2), 2019 | 222 | 2019 |
| Polarity governs atomic interaction through two-dimensional materials W Kong, H Li, K Qiao, Y Kim, K Lee, Y Nie, D Lee, T Osadchy, RJ Molnar, ... Nature materials 17 (11), 999-1004, 2018 | 214 | 2018 |
| Demonstration of β-(AlxGa1-x) 2O3/Ga2O3 double heterostructure field effect transistors Y Zhang, C Joishi, Z Xia, M Brenner, S Lodha, S Rajan Applied physics letters 112 (23), 2018 | 162 | 2018 |
| Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes C Joishi, S Rafique, Z Xia, L Han, S Krishnamoorthy, Y Zhang, S Lodha, ... Applied Physics Express 11 (3), 031101, 2018 | 137 | 2018 |
| Delta Doped -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts Z Xia, C Joishi, S Krishnamoorthy, S Bajaj, Y Zhang, M Brenner, S Lodha, ... IEEE Electron Device Letters 39 (4), 568-571, 2018 | 131 | 2018 |
| Interband tunneling for hole injection in III-nitride ultraviolet emitters Y Zhang, S Krishnamoorthy, JM Johnson, F Akyol, A Allerman, ... Applied Physics Letters 106 (14), 2015 | 95 | 2015 |
| Breakdown Characteristics of -(Al0.22Ga0.78)2O3/Ga2O3 Field-Plated Modulation-Doped Field-Effect Transistors C Joishi, Y Zhang, Z Xia, W Sun, AR Arehart, S Ringel, S Lodha, S Rajan IEEE Electron Device Letters 40 (8), 1241-1244, 2019 | 94 | 2019 |
| Trapping Effects in Si-Doped-Ga2O3MESFETs on an Fe-Doped-Ga2O3Substrate JF McGlone, Z Xia, Y Zhang, C Joishi, S Lodha, S Rajan, SA Ringel, ... IEEE Electron Device Letters 39 (7), 1042-1045, 2018 | 94 | 2018 |
| AlGaN channel field effect transistors with graded heterostructure ohmic contacts S Bajaj, F Akyol, S Krishnamoorthy, Y Zhang, S Rajan Applied Physics Letters 109 (13), 2016 | 88 | 2016 |
| Evaluation of Low-Temperature Saturation Velocity in -(AlxGa1–x)2O3/Ga2O3 Modulation-Doped Field-Effect Transistors Y Zhang, Z Xia, J Mcglone, W Sun, C Joishi, AR Arehart, SA Ringel, ... IEEE Transactions on Electron Devices 66 (3), 1574-1578, 2019 | 85 | 2019 |
| Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown β-Ga2O3 F Alema, Y Zhang, A Osinsky, N Valente, A Mauze, T Itoh, JS Speck APL Materials 7 (12), 2019 | 82 | 2019 |
| Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency Y Zhang, Z Jamal-Eddine, F Akyol, S Bajaj, JM Johnson, G Calderon, ... Applied Physics Letters 112 (7), 2018 | 78 | 2018 |
| Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions Y Zhang, S Krishnamoorthy, F Akyol, AA Allerman, MW Moseley, ... Applied Physics Letters 109 (12), 2016 | 75 | 2016 |
| Solar blind Schottky photodiode based on an MOCVD-grown homoepitaxial β-Ga2O3 thin film F Alema, B Hertog, P Mukhopadhyay, Y Zhang, A Mauze, A Osinsky, ... APL Materials 7 (2), 2019 | 71 | 2019 |
| Graded AlGaN channel transistors for improved current and power gain linearity S Bajaj, Z Yang, F Akyol, PS Park, Y Zhang, AL Price, S Krishnamoorthy, ... IEEE Transactions on Electron Devices 64 (8), 3114-3119, 2017 | 71 | 2017 |
| Tunnel-injected sub-260 nm ultraviolet light emitting diodes Y Zhang, S Krishnamoorthy, F Akyol, S Bajaj, AA Allerman, MW Moseley, ... Applied Physics Letters 110 (20), 2017 | 71 | 2017 |
| Low 114 cm− 3 free carrier concentration in epitaxial β-Ga2O3 grown by MOCVD F Alema, Y Zhang, A Osinsky, N Orishchin, N Valente, A Mauze, JS Speck APL Materials 8 (2), 2020 | 70 | 2020 |
Siddharth RajanElectrical and Computer Engineering, Ohio State UniversityVerified email at ece.osu.edu
