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Yuewei Zhang
Yuewei Zhang
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The 2020 UV emitter roadmap
H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ...
Journal of Physics D: Applied Physics 53 (50), 503001, 2020
3952020
Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x) 2O3/Ga2O3 heterostructures
Y Zhang, A Neal, Z Xia, C Joishi, JM Johnson, Y Zheng, S Bajaj, ...
Applied Physics Letters 112 (17), 2018
3652018
Modulation-doped β-(Al0. 2Ga0. 8) 2O3/Ga2O3 field-effect transistor
S Krishnamoorthy, Z Xia, C Joishi, Y Zhang, J McGlone, J Johnson, ...
Applied Physics Letters 111 (2), 2017
3142017
MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature
Y Zhang, F Alema, A Mauze, OS Koksaldi, R Miller, A Osinsky, JS Speck
APL Materials 7 (2), 2019
2432019
Polarity governs atomic interaction through two-dimensional materials
W Kong, H Li, K Qiao, Y Kim, K Lee, Y Nie, D Lee, T Osadchy, RJ Molnar, ...
Nature materials 17 (11), 999-1004, 2018
2302018
Demonstration of β-(AlxGa1-x) 2O3/Ga2O3 double heterostructure field effect transistors
Y Zhang, C Joishi, Z Xia, M Brenner, S Lodha, S Rajan
Applied physics letters 112 (23), 2018
1722018
Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes
C Joishi, S Rafique, Z Xia, L Han, S Krishnamoorthy, Y Zhang, S Lodha, ...
Applied Physics Express 11 (3), 031101, 2018
1582018
Delta Doped -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts
Z Xia, C Joishi, S Krishnamoorthy, S Bajaj, Y Zhang, M Brenner, S Lodha, ...
IEEE Electron Device Letters 39 (4), 568-571, 2018
1432018
Breakdown Characteristics of -(Al0.22Ga0.78)2O3/Ga2O3 Field-Plated Modulation-Doped Field-Effect Transistors
C Joishi, Y Zhang, Z Xia, W Sun, AR Arehart, S Ringel, S Lodha, S Rajan
IEEE Electron Device Letters 40 (8), 1241-1244, 2019
1062019
Trapping Effects in Si-Doped-Ga2O3MESFETs on an Fe-Doped-Ga2O3Substrate
JF McGlone, Z Xia, Y Zhang, C Joishi, S Lodha, S Rajan, SA Ringel, ...
IEEE Electron Device Letters 39 (7), 1042-1045, 2018
1002018
Interband tunneling for hole injection in III-nitride ultraviolet emitters
Y Zhang, S Krishnamoorthy, JM Johnson, F Akyol, A Allerman, ...
Applied Physics Letters 106 (14), 2015
992015
Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown β-Ga2O3
F Alema, Y Zhang, A Osinsky, N Valente, A Mauze, T Itoh, JS Speck
APL Materials 7 (12), 2019
982019
AlGaN channel field effect transistors with graded heterostructure ohmic contacts
S Bajaj, F Akyol, S Krishnamoorthy, Y Zhang, S Rajan
Applied Physics Letters 109 (13), 2016
932016
Evaluation of Low-Temperature Saturation Velocity in -(AlxGa1–x)2O3/Ga2O3 Modulation-Doped Field-Effect Transistors
Y Zhang, Z Xia, J Mcglone, W Sun, C Joishi, AR Arehart, SA Ringel, ...
IEEE Transactions on Electron Devices 66 (3), 1574-1578, 2019
922019
Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency
Y Zhang, Z Jamal-Eddine, F Akyol, S Bajaj, JM Johnson, G Calderon, ...
Applied Physics Letters 112 (7), 2018
872018
Graded AlGaN channel transistors for improved current and power gain linearity
S Bajaj, Z Yang, F Akyol, PS Park, Y Zhang, AL Price, S Krishnamoorthy, ...
IEEE Transactions on Electron Devices 64 (8), 3114-3119, 2017
832017
Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions
Y Zhang, S Krishnamoorthy, F Akyol, AA Allerman, MW Moseley, ...
Applied Physics Letters 109 (12), 2016
802016
Low 114 cm− 3 free carrier concentration in epitaxial β-Ga2O3 grown by MOCVD
F Alema, Y Zhang, A Osinsky, N Orishchin, N Valente, A Mauze, JS Speck
APL Materials 8 (2), 2020
782020
Tunnel-injected sub-260 nm ultraviolet light emitting diodes
Y Zhang, S Krishnamoorthy, F Akyol, S Bajaj, AA Allerman, MW Moseley, ...
Applied Physics Letters 110 (20), 2017
772017
High current density 2D/3D MoS2/GaN Esaki tunnel diodes
S Krishnamoorthy, EW Lee, CH Lee, Y Zhang, WD McCulloch, ...
Applied Physics Letters 109 (18), 2016
762016
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