Luke Nyakiti
Luke Nyakiti
Assistant Professor, Texas A&M University, Materials Engineer: Depts. of Marine Eng.;Material Sc
Verified email at tamu.edu - Homepage
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Year
Sensitive room-temperature terahertz detection via the photothermoelectric effect in graphene
X Cai, AB Sushkov, RJ Suess, MM Jadidi, GS Jenkins, LO Nyakiti, ...
Nature nanotechnology 9 (10), 814, 2014
3682014
Plasmon-enhanced terahertz photodetection in graphene
X Cai, AB Sushkov, MM Jadidi, LO Nyakiti, RL Myers-Ward, DK Gaskill, ...
Nano letters 15 (7), 4295-4302, 2015
882015
Fluorine functionalization of epitaxial graphene for uniform deposition of thin high-κ dielectrics
V Wheeler, N Garces, L Nyakiti, R Myers-Ward, G Jernigan, J Culbertson, ...
Carbon 50 (6), 2307-2314, 2012
842012
Chemically resolved interface structure of epitaxial graphene on SiC (0001)
JD Emery, B Detlefs, HJ Karmel, LO Nyakiti, DK Gaskill, MC Hersam, ...
Physical Review Letters 111 (21), 215501, 2013
722013
Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates
WS Hwang, P Zhao, K Tahy, LO Nyakiti, VD Wheeler, RL Myers-Ward, ...
APL materials 3 (1), 011101, 2015
702015
Graphene FETs for zero-bias linear resistive FET mixers
JS Moon, HC Seo, M Antcliffe, D Le, C McGuire, A Schmitz, LO Nyakiti, ...
IEEE Electron Device Letters 34 (3), 465-467, 2013
642013
Bilayer graphene grown on 4H-SiC (0001) step-free mesas
LO Nyakiti, RL Myers-Ward, VD Wheeler, EA Imhoff, FJ Bezares, H Chun, ...
Nano letters 12 (4), 1749-1756, 2012
632012
Enabling graphene-based technologies: Toward wafer-scale production of epitaxial graphene
LO Nyakiti, VD Wheeler, NY Garces, RL Myers-Ward, CR Eddy Jr, ...
MRS bulletin 37 (12), 1149, 2012
552012
Epitaxial growth of III–nitride/graphene heterostructures for electronic devices
N Nepal, VD Wheeler, TJ Anderson, FJ Kub, MA Mastro, RL Myers-Ward, ...
Applied Physics Express 6 (6), 061003, 2013
542013
Lateral graphene heterostructure field-effect transistor
JS Moon, H Seo, F Stratan, M Antcliffe, A Schmitz, RS Ross, AA Kiselev, ...
IEEE Electron Device Letters 34 (9), 1190-1192, 2013
522013
Graphene FET-based zero-bias RF to millimeter-wave detection
JS Moon, HC Seo, M Antcliffe, S Lin, C McGuire, D Le, LO Nyakiti, ...
IEEE electron device letters 33 (10), 1357-1359, 2012
432012
Epitaxial growth of cubic and hexagonal InN thin films via plasma-assisted atomic layer epitaxy
N Nepal, NA Mahadik, LO Nyakiti, SB Qadri, MJ Mehl, JK Hite, CR Eddy Jr
Crystal growth & design 13 (4), 1485-1490, 2013
392013
Thermal oxidation of single crystalline aluminum nitride
J Chaudhuri, L Nyakiti, RG Lee, Z Gu, JH Edgar, JG Wen
Materials characterization 58 (8-9), 672-679, 2007
352007
Water affinity to epitaxial graphene: the impact of layer thickness
CE Giusca, V Panchal, M Munz, VD Wheeler, LO Nyakiti, RL Myers‐Ward, ...
Advanced Materials Interfaces 2 (16), 1500252, 2015
322015
Fabrication of top-gated epitaxial graphene nanoribbon FETs using hydrogen-silsesquioxane
WS Hwang, K Tahy, LO Nyakiti, VD Wheeler, RL Myers-Ward, CR Eddy Jr, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2012
282012
Characterization of strain-rate sensitivity and grain boundary structure in nanocrystalline gold-copper alloys
LO Nyakiti, AF Jankowski
Metallurgical and Materials Transactions A 41 (4), 838-847, 2010
262010
Native oxide and hydroxides and their implications for bulk AlN crystal growth
JH Edgar, L Du, L Nyakiti, J Chaudhuri
Journal of crystal growth 310 (17), 4002-4006, 2008
252008
Plasma-based chemical modification of epitaxial graphene with oxygen functionalities
SC Hernández, VD Wheeler, MS Osofsky, GG Jernigan, VK Nagareddy, ...
Surface and Coatings Technology 241, 8-12, 2014
212014
Multilayer graphene, moiré patterns, grain boundaries and defects identified by scanning tunneling microscopy on the m-plane, non-polar surface of SiC
P Xu, D Qi, JK Schoelz, J Thompson, PM Thibado, VD Wheeler, ...
Carbon 80, 75-81, 2014
182014
Investigation of the epitaxial graphene/p-SiC heterojunction
TJ Anderson, KD Hobart, LO Nyakiti, VD Wheeler, RL Myers-Ward, ...
IEEE electron device letters 33 (11), 1610-1612, 2012
132012
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