Locquet Jean-Pierre
Locquet Jean-Pierre
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Doubling the critical temperature of La1.9Sr0.1CuO4 using epitaxial strain
JP Locquet, J Perret, J Fompeyrine, E Mächler, JW Seo, G Van Tendeloo
Nature 394 (6692), 453-456, 1998
Direct observation of the alignment of ferromagnetic spins by antiferromagnetic spins
F Nolting, A Scholl, J Stöhr, JW Seo, J Fompeyrine, H Siegwart, ...
Nature 405 (6788), 767-769, 2000
Observation of antiferromagnetic domains in epitaxial thin films
A Scholl, J Stohr, J Luning, JW Seo, J Fompeyrine, H Siegwart, ...
Science 287 (5455), 1014-1016, 2000
Structural phase transition in YBa2Cu3O7− δ: the role of dimensionality for high temperature superconductivity
IK Schuller, DG Hinks, MA Beno, DW Capone II, L Soderholm, JP Locquet, ...
Solid state communications 63 (5), 385-388, 1987
Direct growth of carbon nanotubes on carbon fibers: Effect of the CVD parameters on the degradation of mechanical properties of carbon fibers
N De Greef, L Zhang, A Magrez, L Forró, JP Locquet, I Verpoest, JW Seo
Diamond and Related Materials 51, 39-48, 2015
High-K dielectrics for the gate stack
JP Locquet, C Marchiori, M Sousa, J Fompeyrine, JW Seo
Journal of Applied Physics 100 (5), 2006
Antiferromagnetic LaFeO3 thin films and their effect on exchange bias
JW Seo, EE Fullerton, F Nolting, A Scholl, J Fompeyrine, JP Locquet
Journal of Physics: Condensed Matter 20 (26), 264014, 2008
Determination of the antiferromagnetic spin axis in epitaxial films by x-ray magnetic linear dichroism spectroscopy
J Lüning, F Nolting, A Scholl, H Ohldag, JW Seo, J Fompeyrine, ...
Physical Review B 67 (21), 214433, 2003
Band-edge high-performance high-k/metal gate n-MOSFETs using cap layers containing group IIA and IIIB elements with gate-first processing for 45 nm and beyond
TC Chen, G Shahidi, S Guha, M Ieong, MP Chudzik, R Jammy, ...
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 178-179, 2006
Field-effect transistors with SrHfO3 as gate oxide
C Rossel, B Mereu, C Marchiori, D Caimi, M Sousa, A Guiller, H Siegwart, ...
Applied physics letters 89 (5), 2006
Block‐by‐block deposition: A new growth method for complex oxide thin films
JP Locquet, A Catana, E Mächler, C Gerber, JG Bednorz
Applied physics letters 64 (3), 372-374, 1994
Carbon nanotube-grafted carbon fiber polymer composites: damage characterization on the micro-scale
L Zhang, N De Greef, G Kalinka, B Van Bilzen, JP Locquet, I Verpoest, ...
Composites Part B: Engineering 126, 202-210, 2017
Interface formation and defect structures in epitaxial thin films on (111) Si
JW Seo, J Fompeyrine, A Guiller, G Norga, C Marchiori, H Siegwart, ...
Applied Physics Letters 83 (25), 5211-5213, 2003
SrHfO3 as gate dielectric for future CMOS technology
C Rossel, M Sousa, C Marchiori, J Fompeyrine, D Webb, D Caimi, ...
Microelectronic engineering 84 (9-10), 1869-1873, 2007
Beam energy considerations for gold nano-particle enhanced radiation treatment
F Van den Heuvel, JP Locquet, S Nuyts
Physics in Medicine & Biology 55 (16), 4509, 2010
Enhancement-mode buried-channel In0. 7Ga0. 3As/In0. 52Al0. 48 MOSFETs with high-κ gate dielectrics
Y Sun, EW Kiewra, SJ Koester, N Ruiz, A Callegari, KE Fogel, DK Sadana, ...
IEEE electron device letters 28 (6), 473-475, 2007
Optical properties of epitaxial SrHfO3 thin films grown on Si
M Sousa, C Rossel, C Marchiori, H Siegwart, D Caimi, JP Locquet, ...
Journal of Applied Physics 102 (10), 2007
Variation of the in-plane penetration depth as a function of doping in thin films on : Implications for the overdoped state
JP Locquet, Y Jaccard, A Cretton, EJ Williams, F Arrouy, E Mächler, ...
Physical Review B 54 (10), 7481, 1996
Discrete and continuous disorder in superlattices
JP Locquet, D Neerinck, L Stockman, Y Bruynseraede, IK Schuller
Physical Review B 39 (18), 13338, 1989
Tensile strained GeSn on Si by solid phase epitaxy
RR Lieten, JW Seo, S Decoster, A Vantomme, S Peters, KC Bustillo, ...
Applied physics letters 102 (5), 2013
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