| Doubling the critical temperature of La1.9Sr0.1CuO4 using epitaxial strain JP Locquet, J Perret, J Fompeyrine, E Mächler, JW Seo, G Van Tendeloo Nature 394 (6692), 453-456, 1998 | 781 | 1998 |
| Direct observation of the alignment of ferromagnetic spins by antiferromagnetic spins F Nolting, A Scholl, J Stöhr, JW Seo, J Fompeyrine, H Siegwart, ... Nature 405 (6788), 767-769, 2000 | 580 | 2000 |
| Observation of antiferromagnetic domains in epitaxial thin films A Scholl, J Stohr, J Luning, JW Seo, J Fompeyrine, H Siegwart, ... Science 287 (5455), 1014-1016, 2000 | 397 | 2000 |
| Structural phase transition in YBa2Cu3O7− δ: the role of dimensionality for high temperature superconductivity IK Schuller, DG Hinks, MA Beno, DW Capone II, L Soderholm, JP Locquet, ... Solid state communications 63 (5), 385-388, 1987 | 251 | 1987 |
| Direct growth of carbon nanotubes on carbon fibers: Effect of the CVD parameters on the degradation of mechanical properties of carbon fibers N De Greef, L Zhang, A Magrez, L Forró, JP Locquet, I Verpoest, JW Seo Diamond and Related Materials 51, 39-48, 2015 | 175 | 2015 |
| High-K dielectrics for the gate stack JP Locquet, C Marchiori, M Sousa, J Fompeyrine, JW Seo Journal of Applied Physics 100 (5), 2006 | 166 | 2006 |
| Antiferromagnetic LaFeO3 thin films and their effect on exchange bias JW Seo, EE Fullerton, F Nolting, A Scholl, J Fompeyrine, JP Locquet Journal of Physics: Condensed Matter 20 (26), 264014, 2008 | 140 | 2008 |
| Determination of the antiferromagnetic spin axis in epitaxial films by x-ray magnetic linear dichroism spectroscopy J Lüning, F Nolting, A Scholl, H Ohldag, JW Seo, J Fompeyrine, ... Physical Review B 67 (21), 214433, 2003 | 131 | 2003 |
| Band-edge high-performance high-k/metal gate n-MOSFETs using cap layers containing group IIA and IIIB elements with gate-first processing for 45 nm and beyond TC Chen, G Shahidi, S Guha, M Ieong, MP Chudzik, R Jammy, ... 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 178-179, 2006 | 120 | 2006 |
| Field-effect transistors with SrHfO3 as gate oxide C Rossel, B Mereu, C Marchiori, D Caimi, M Sousa, A Guiller, H Siegwart, ... Applied physics letters 89 (5), 2006 | 116* | 2006 |
| Block‐by‐block deposition: A new growth method for complex oxide thin films JP Locquet, A Catana, E Mächler, C Gerber, JG Bednorz Applied physics letters 64 (3), 372-374, 1994 | 114 | 1994 |
| Carbon nanotube-grafted carbon fiber polymer composites: damage characterization on the micro-scale L Zhang, N De Greef, G Kalinka, B Van Bilzen, JP Locquet, I Verpoest, ... Composites Part B: Engineering 126, 202-210, 2017 | 91 | 2017 |
| Interface formation and defect structures in epitaxial thin films on (111) Si JW Seo, J Fompeyrine, A Guiller, G Norga, C Marchiori, H Siegwart, ... Applied Physics Letters 83 (25), 5211-5213, 2003 | 87 | 2003 |
| SrHfO3 as gate dielectric for future CMOS technology C Rossel, M Sousa, C Marchiori, J Fompeyrine, D Webb, D Caimi, ... Microelectronic engineering 84 (9-10), 1869-1873, 2007 | 86 | 2007 |
| Beam energy considerations for gold nano-particle enhanced radiation treatment F Van den Heuvel, JP Locquet, S Nuyts Physics in Medicine & Biology 55 (16), 4509, 2010 | 83 | 2010 |
| Enhancement-mode buried-channel In0. 7Ga0. 3As/In0. 52Al0. 48 MOSFETs with high-κ gate dielectrics Y Sun, EW Kiewra, SJ Koester, N Ruiz, A Callegari, KE Fogel, DK Sadana, ... IEEE electron device letters 28 (6), 473-475, 2007 | 81 | 2007 |
| Optical properties of epitaxial SrHfO3 thin films grown on Si M Sousa, C Rossel, C Marchiori, H Siegwart, D Caimi, JP Locquet, ... Journal of Applied Physics 102 (10), 2007 | 75 | 2007 |
| Variation of the in-plane penetration depth as a function of doping in thin films on : Implications for the overdoped state JP Locquet, Y Jaccard, A Cretton, EJ Williams, F Arrouy, E Mächler, ... Physical Review B 54 (10), 7481, 1996 | 74 | 1996 |
| Discrete and continuous disorder in superlattices JP Locquet, D Neerinck, L Stockman, Y Bruynseraede, IK Schuller Physical Review B 39 (18), 13338, 1989 | 74 | 1989 |
| Tensile strained GeSn on Si by solid phase epitaxy RR Lieten, JW Seo, S Decoster, A Vantomme, S Peters, KC Bustillo, ... Applied physics letters 102 (5), 2013 | 73 | 2013 |
