Keita Konishi
Keita Konishi
Novel Crystal technology, Inc.
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1-kV vertical Ga2O3 field-plated Schottky barrier diodes
K Konishi, K Goto, H Murakami, Y Kumagai, A Kuramata, S Yamakoshi, ...
Applied Physics Letters 110 (10), 103506, 2017
Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n–Ga2O3 drift …
M Higashiwaki, K Konishi, K Sasaki, K Goto, K Nomura, QT Thieu, ...
Applied Physics Letters 108 (13), 133503, 2016
Halide vapor phase epitaxy of Si doped β-Ga2O3 and its electrical properties
K Goto, K Konishi, H Murakami, Y Kumagai, B Monemar, M Higashiwaki, ...
Thin Solid Films 666, 182-184, 2018
Vertical Ga2O3 Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion Implantation
CH Lin, Y Yuda, MH Wong, M Sato, N Takekawa, K Konishi, T Watahiki, ...
IEEE Electron Device Letters 40 (9), 1487-1490, 2019
Large conduction band offset at SiO2/β‐Ga2O3 heterojunction determined by X‐ray photoelectron spectroscopy
K Konishi, T Kamimura, MH Wong, K Sasaki, A Kuramata, S Yamakoshi, ...
physica status solidi (b) 253 (4), 623-625, 2016
Single-crystal-Ga2O3/polycrystalline-SiC bonded substrate with low thermal and electrical resistances at the heterointerface
CH Lin, N Hatta, K Konishi, S Watanabe, A Kuramata, K Yagi, ...
Applied Physics Letters 114 (3), 032103, 2019
Comparison of O2 and H2O as oxygen source for homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy
K Konishi, K Goto, R Togashi, H Murakami, M Higashiwaki, A Kuramata, ...
Journal of Crystal Growth 492, 39-44, 2018
Preparation of 2-in.-diameter (001) β-Ga2O3 homoepitaxial wafers by halide vapor phase epitaxy
QT Thieu, D Wakimoto, Y Koishikawa, K Sasaki, K Goto, K Konishi, ...
Japanese Journal of Applied Physics 56 (11), 110310, 2017
Characterizing the electron transport properties of a single< 110> InAs nanowire
Z Cui, R Perumal, T Ishikura, K Konishi, K Yoh, J Motohisa
Applied Physics Express 7 (8), 085001, 2014
Electrical spin injection from ferromagnet into an InAs quantum well through a MgO tunnel barrier
T Ishikura, LK Liefeith, Z Cui, K Konishi, K Yoh, T Uemura
Applied Physics Express 7 (7), 073001, 2014
Transport characteristics of a single-layer graphene field-effect transistor grown on 4H-silicon carbide
K Konishi, K Yoh
Physica E: Low-dimensional Systems and Nanostructures 42 (10), 2792-2795, 2010
Spin Glass of the Site‐Random Ising Model with First and Second Neighbor Interactions
S Katsura, K Konishi
physica status solidi (b) 112 (2), 399-407, 1982
Dependence of thermal stability of GaN on substrate orientation and off-cut
K Yoshida, S Yamanobe, K Konishi, S Takashima, M Edo, B Monemar, ...
Japanese Journal of Applied Physics 58 (SC), SCCD17, 2019
Spin-injection into epitaxial graphene on silicon carbide
K Konishi, Z Cui, T Hiraki, K Yoh
Journal of crystal growth 378, 385-387, 2013
An InAs nanowire spin transistor with subthreshold slope of 20mV/dec
K Yoh, Z Cui, K Konishi, M Ohno, K Blekker, W Prost, FJ Tegude, ...
70th Device Research Conference, 79-80, 2012
Proposal of graphene bandgap control by hexagonal network formation
L Zou, K Konishi, K Yoh
Japanese Journal of Applied Physics 50 (6S), 06GE14, 2011
Epitaxial graphene FETs with high on/off ratio grown on 4H-SiC
K Yoh, K Konishi, H Hibino
2009 9th IEEE Conference on Nanotechnology (IEEE-NANO), 334-336, 2009
Ga2O3 field-plated schottky barrier diodes with a breakdown voltage of over 1 kV
K Konishi, K Goto, QT Thieu, R Togashi, H Murakami, Y Kumagai, ...
2016 74th Annual Device Research Conference (DRC), 1-2, 2016
Halide Vapor Phase Epitaxy 1: Homoepitaxial Growth of β-Ga2O3 on β-Ga2O3 Substrates
Y Kumagai, K Konishi, K Goto, H Murakami, B Monemar
Gallium Oxide: Materials Properties, Crystal Growth, and Devices, 185-202, 2020
Recent Advances in Ga2O3 MOSFET Technologies
M Higashiwaki, MH Wong, T Kamimura, Y Nakata, CH Lin, R Lingaparthi, ...
2018 76th Device Research Conference (DRC), 1-1, 2018
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