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Dr. Umesh Chand
Dr. Umesh Chand
IME_A-Star, Singapore
Verified email at ime.a-star.edu.sg
Title
Cited by
Cited by
Year
Overview of emerging nonvolatile memory technologies
JS Meena, SM Sze, U Chand, TY Tseng
Nanoscale research letters 9, 1-33, 2014
8622014
Metal oxide resistive switching memory: materials, properties and switching mechanisms
D Kumar, R Aluguri, U Chand, TY Tseng
Ceramics International 43, S547-S556, 2017
1292017
All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration
M Sivan, Y Li, H Veluri, Y Zhao, B Tang, X Wang, E Zamburg, JF Leong, ...
Nature communications 10 (1), 5201, 2019
1262019
Forming-free bipolar resistive switching in nonstoichiometric ceria films
M Ismail, CY Huang, D Panda, CJ Hung, TL Tsai, JH Jieng, CA Lin, ...
Nanoscale research letters 9, 1-8, 2014
992014
Suppression of endurance degradation by utilizing oxygen plasma treatment in HfO2 resistive switching memory
U Chand, CY Huang, JH Jieng, WY Jang, CH Lin, TY Tseng
Applied Physics Letters 106 (15), 2015
832015
Mechanism of Nonlinear Switching in HfO2-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer
U Chand, KC Huang, CY Huang, TY Tseng
IEEE Transactions on Electron Devices 62 (11), 3665-3670, 2015
782015
Enhancement of resistive switching properties in nitride based CBRAM device by inserting an Al2O3 thin layer
D Kumar, R Aluguri, U Chand, TY Tseng
Applied Physics Letters 110 (20), 2017
762017
Demonstration of synaptic and resistive switching characteristics in W/TiO2/HfO2/TaN memristor crossbar array for bioinspired neuromorphic computing
M Ismail, U Chand, C Mahata, J Nebhen, S Kim
Journal of Materials Science & Technology 96, 94-102, 2022
592022
High-Performance TiN/Al2O3/ZnO/Al2O3/TiN Flexible RRAM Device With High Bending Condition
D Kumar, U Chand, LW Siang, TY Tseng
IEEE Transactions on Electron Devices 67 (2), 493-498, 2020
532020
Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO 2 Gate Dielectric and Excellent Uniformity
S Samanta*, U Chand*, S Xu, K Han, Y Wu, C Wang, A Kumar, H Velluri, ...
IEEE Electron Device Letters 41 (6), 856-859, 2020
512020
Investigation of thermal stability and reliability of HfO2 based resistive random access memory devices with cross-bar structure
U Chand, KC Huang, CY Huang, CH Ho, CH Lin, TY Tseng
Journal of Applied Physics 117 (18), 2015
492015
Effect of different synthesis techniques on structural, magnetic and magneto-transport properties of Pr0. 7Sr0. 3MnO3 manganite
U Chand, K Yadav, A Gaur, GD Varma
Journal of Rare Earths 28 (5), 760-764, 2010
382010
Mechanism of High Temperature Retention Property (up to 200 °C) in ZrO2-Based Memory Device With Inserting a ZnO Thin Layer
U Chand, CY Huang, TY Tseng
IEEE Electron Device Letters 35 (10), 1019-1021, 2014
372014
Room-temperature fabricated, fully transparent resistive memory based on ITO/CeO2/ITO structure for RRAM applications
M Ismail, AM Rana, I Talib, TL Tsai, U Chand, E Ahmed, MY Nadeem, ...
Solid State Communications 202, 28-34, 2015
362015
Metal induced crystallized poly-Si-based conductive bridge resistive switching memory device with one transistor and one resistor architecture
U Chand, CY Huang, D Kumar, TY Tseng
Applied Physics Letters 107 (20), 2015
342015
One bipolar selector-one resistor for flexible crossbar memory applications
D Kumar, R Aluguri, U Chand, TY Tseng
IEEE Transactions on Electron Devices 66 (3), 1296-1301, 2019
312019
ZrN-based flexible resistive switching memory
D Kumar, U Chand, LW Siang, TY Tseng
IEEE Electron Device Letters 41 (5), 705-708, 2020
272020
Conductive bridge random access memory characteristics of SiCN based transparent device due to indium diffusion
D Kumar, R Aluguri, U Chand, TY Tseng
Nanotechnology 29 (12), 125202, 2018
272018
Resistive switching characteristics of Pt/CeOx/TiN memory device
M Ismail, I Talib, CY Huang, CJ Hung, TL Tsai, JH Jieng, U Chand, CA Lin, ...
Japanese Journal of Applied Physics 53 (6), 060303, 2014
192014
Nanoscale Res. Lett. 9, 526 (2014)
JS Meena, SM Sze, U Chand, TY Tseng
18
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