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Zhanbo Xia
Zhanbo Xia
Post Doctoral Scholar, ECE, The Ohio State University
Verified email at osu.edu
Title
Cited by
Cited by
Year
Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures
Y Zhang, A Neal, Z Xia, C Joishi, JM Johnson, Y Zheng, S Bajaj, ...
Applied Physics Letters 112 (17), 173502, 2018
2872018
Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor
S Krishnamoorthy, Z Xia, C Joishi, Y Zhang, J McGlone, J Johnson, ...
Applied Physics Letters 111 (2), 023502, 2017
2532017
High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector
A Singh Pratiyush, S Krishnamoorthy, S Vishnu Solanke, Z Xia, ...
Applied Physics Letters 110 (22), 221107, 2017
1942017
Delta-doped β-gallium oxide field-effect transistor
S Krishnamoorthy, Z Xia, S Bajaj, M Brenner, S Rajan
Applied Physics Express 10 (5), 051102, 2017
1402017
Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors
Y Zhang, C Joishi, Z Xia, M Brenner, S Lodha, S Rajan
Applied physics letters 112 (23), 233503, 2018
1392018
Delta Doped -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts
Z Xia, C Joishi, S Krishnamoorthy, S Bajaj, Y Zhang, M Brenner, S Lodha, ...
IEEE Electron Device Letters 39 (4), 568-571, 2018
1152018
-Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz
Z Xia, H Xue, C Joishi, J Mcglone, NK Kalarickal, SH Sohel, M Brenner, ...
IEEE Electron Device Letters 40 (7), 1052-1055, 2019
1142019
Low-pressure CVD-grown β-Ga2O3 bevel-field-plated Schottky barrier diodes
C Joishi, S Rafique, Z Xia, L Han, S Krishnamoorthy, Y Zhang, S Lodha, ...
Applied Physics Express 11 (3), 031101, 2018
1132018
Trapping effects in Si δ-doped β-Ga2O3 MESFETs on an Fe-doped β-Ga2O3 substrate
JF McGlone, Z Xia, Y Zhang, C Joishi, S Lodha, S Rajan, SA Ringel, ...
IEEE Electron Device Letters 39 (7), 1042-1045, 2018
882018
Breakdown Characteristics of -(Al0.22Ga0.78)2O3/Ga2O3 Field-Plated Modulation-Doped Field-Effect Transistors
C Joishi, Y Zhang, Z Xia, W Sun, AR Arehart, S Ringel, S Lodha, S Rajan
IEEE Electron Device Letters 40 (8), 1241-1244, 2019
772019
Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field
Z Xia, H Chandrasekar, W Moore, C Wang, AJ Lee, J McGlone, ...
Applied Physics Letters 115 (25), 252104, 2019
762019
Evaluation of Low-Temperature Saturation Velocity in -(AlxGa1–x)2O3/Ga2O3 Modulation-Doped Field-Effect Transistors
Y Zhang, Z Xia, J Mcglone, W Sun, C Joishi, AR Arehart, SA Ringel, ...
IEEE Transactions on Electron Devices 66 (3), 1574-1578, 2019
712019
Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga2O3
Z Feng, AFMAU Bhuiyan, Z Xia, W Moore, Z Chen, JF McGlone, ...
physica status solidi (RRL)–Rapid Research Letters 14 (8), 2000145, 2020
652020
Demonstration of zero bias responsivity in MBE grown β-Ga2O3 lateral deep-UV photodetector
AS Pratiyush, S Krishnamoorthy, S Kumar, Z Xia, R Muralidharan, ...
Japanese Journal of Applied Physics 57 (6), 060313, 2018
642018
Effect of buffer iron doping on delta-doped β-Ga2O3 metal semiconductor field effect transistors
C Joishi, Z Xia, J McGlone, Y Zhang, AR Arehart, S Ringel, S Lodha, ...
Applied Physics Letters 113 (12), 123501, 2018
572018
MBE-Grown-Ga2O3-Based Schottky UV-C Photodetectors With Rectification Ratio ~107
AS Pratiyush, Z Xia, S Kumar, Y Zhang, C Joishi, R Muralidharan, S Rajan, ...
IEEE Photonics Technology Letters 30 (23), 2025-2028, 2018
502018
High electron density β-(Al0.17Ga0.83)2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer
NK Kalarickal, Z Xia, JF McGlone, Y Liu, W Moore, AR Arehart, SA Ringel, ...
Journal of Applied Physics 127 (21), 215706, 2020
492020
β-(Al0.18Ga0.82)2O3/Ga2O3 Double Heterojunction Transistor With Average Field of 5.5 MV/cm
NK Kalarickal, Z Xia, HL Huang, W Moore, Y Liu, M Brenner, J Hwang, ...
IEEE Electron Device Letters 42 (6), 899-902, 2021
412021
Electrostatic engineering using extreme permittivity materials for ultra-wide bandgap semiconductor transistors
NK Kalarickal, Z Feng, AFMAU Bhuiyan, Z Xia, W Moore, JF McGlone, ...
IEEE Transactions on Electron Devices 68 (1), 29-35, 2020
362020
Identification of critical buffer traps in Si δ-doped β-Ga2O3 MESFETs
JF McGlone, Z Xia, C Joishi, S Lodha, S Rajan, S Ringel, AR Arehart
Applied Physics Letters 115 (15), 153501, 2019
352019
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