| Vertical nanowire FET integration and device aspects A Veloso, E Altamirano-Sánchez, S Brus, BT Chan, M Cupak, M Dehan, ... ECS Transactions 72 (4), 31, 2016 | 54 | 2016 |
| Junctionless gate-all-around lateral and vertical nanowire FETs with simplified processing for advanced logic and analog/RF applications and scaled SRAM cells A Veloso, B Parvais, P Matagne, E Simoen, T Huynh-Bao, V Paraschiv, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 40 | 2016 |
| Record performance Top-down In0.53Ga0.47As vertical nanowire FETs and vertical nanosheets S Ramesh, T Ivanov, V Putcha, A Alian, A Sibaja-Hernandez, ... 2017 IEEE International Electron Devices Meeting (IEDM), 17.1. 1-17.1. 4, 2017 | 20* | 2017 |
| Thickness evaluation of deposited PureB layers in micro-/millimeter-sized windows to Si V Mohammadi, S Ramesh, LK Nanver 2014 International Conference on Microelectronic Test Structures (ICMTS …, 2014 | 19 | 2014 |
| Top-down InGaAs nanowire and fin vertical FETs with record performance S Ramesh, T Ivanov, E Camerotto, N Sun, J Franco, A Sibaja-Hernandez, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 13 | 2016 |
| High-ohmic resistors using nanometer-thin pure-boron chemical-vapour-deposited layers N Golshani, V Mohammadi, S Ramesh, LK Nanver 2013 Proceedings of the European Solid-State Device Research Conference …, 2013 | 10 | 2013 |
| Identification of current transport mechanism in Al2O3 thin films for memory applications S Ramesh, S Dutta, B Shankar, S Gopalan Applied Nanoscience 5, 115-123, 2015 | 9 | 2015 |
| Integration of Ruthenium-based Wordline in a 3-D NAND Memory Devices L Breuil, GK El Hajjam, S Ramesh, A Ajaykumar, A Arreghini, L Zhang, ... 2020 IEEE International Memory Workshop (IMW), 1-4, 2020 | 8 | 2020 |
| Beyond-Si materials and devices for more Moore and more than Moore applications N Collaert, A Alian, H Arimura, G Boccardi, G Eneman, J Franco, T Ivanov, ... 2016 International Conference on IC Design and Technology (ICICDT), 1-5, 2016 | 8 | 2016 |
| Understanding the kinetics of Metal Induced Lateral Crystallization process to enhance the poly-Si channel quality and current conduction in 3-D NAND memory S Ramesh, SV Palayam, A Ajaykumar, K Opsomer, J Bastos, ... 2021 IEEE International Electron Devices Meeting (IEDM), 10.2. 1-10.2. 4, 2021 | 7 | 2021 |
| Effect of PVD process parameters on the quality and reliability of thin (10–30 nm) Al2O3 dielectrics S Dutta, S Ramesh, B Shankar, S Gopalan Applied Nanoscience 2, 1-6, 2012 | 7 | 2012 |
| First Demonstration of Ruthenium and Molybdenum Word lines Integrated into 40nm Pitch 3D-NAND Memory Devices A Ajaykumar, L Breuil, K Katcko, F Schleicher, F Sebaai, Y Oniki, ... 2021 Symposium on VLSI Technology, 1-2, 2021 | 4 | 2021 |
| Al203 thin films on Silicon and Germanium substrates for CMOS and flash memory applications S Gopalan, S Dutta, S Ramesh, R Prathapan AIP Conference Proceedings 1859 (1), 2017 | 4 | 2017 |
| Understanding the factors affecting contact resistance in nanowire field effect transistors (NWFETs) to improve nanoscale contacts for future scaling S Ramesh, T Ivanov, A Sibaja-Hernandez, A Alian, E Camerotto, ... Journal of Applied Physics 132 (2), 2022 | 3 | 2022 |
| Effective Contact Resistivity Reduction for Mo/Pd/n-In0.53Ga0.47 as Contact J Zhang, LL Wang, H Yu, C Merckling, Y Mols, A Vais, S Ramesh, ... IEEE Electron Device Letters 40 (11), 1800-1803, 2019 | 3 | 2019 |
| Effects of substrate heating and post-deposition annealing on characteristics of thin MOCVD HfO2 films S Gopalan, S Ramesh, S Dutta, VV Garbhapu IOP Conference Series: Materials Science and Engineering 310 (1), 012125, 2018 | 3 | 2018 |
| Enabling 3D NAND Trench Cells for Scaled Flash Memories S Rachidi, S Ramesh, L Breuil, Z Tao, D Verreck, GL Donadio, A Arreghini, ... 2023 IEEE International Memory Workshop (IMW), 1-4, 2023 | 2 | 2023 |
| Understanding the Origin of Metal Gate Work Function Shift and Its Impact on Erase Performance in 3D NAND Flash Memories S Ramesh, A Ajaykumar, LÅ Ragnarsson, L Breuil, GK El Hajjam, ... Micromachines 12 (9), 1084, 2021 | 2 | 2021 |
| Reliability of Mo as Word Line Metal in 3D NAND D Tierno, K Croes, A Ajaykumar, S Ramesh, G Van den Bosch, ... 2021 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2021 | 2 | 2021 |
| Erase Behavior of Charge Trap Flash Memory Devices using High-k Dielectric as Blocking Oxide Liner S Ramesh, A Ajaykumar, J Bastos, L Breuil, A Arreghini, L Nyns, ... 51st IEEE Semiconductor Interface Specialists Conference, 1-2, 2020 | 2 | 2020 |
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