| Analysis and simulation of semiconductor devices S Selberherr Springer Science & Business Media, 2012 | 3502 | 2012 |
| SIMON-A simulator for single-electron tunnel devices and circuits C Wasshuber, H Kosina, S Selberherr IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 1997 | 500 | 1997 |
| MINIMOS-A two-dimensional MOS transistor analyzer S Selberherr, A Schutz, HW Potzl IEEE Journal of Solid-State Circuits 15 (4), 605-615, 1980 | 375 | 1980 |
| A review of hydrodynamic and energy-transport models for semiconductor device simulation T Grasser, TW Tang, H Kosina, S Selberherr Proceedings of the IEEE 91 (2), 251-274, 2003 | 297 | 2003 |
| Interactive information visualization to explore and query electronic health records A Rind, TD Wang, W Aigner, S Miksch, K Wongsuphasawat, C Plaisant, ... Foundations and Trends in Human-Computer Interaction 5 (3), 207-298, 2013 | 262 | 2013 |
| The effect of general strain on the band structure and electron mobility of silicon E Ungersboeck, S Dhar, G Karlowatz, V Sverdlov, H Kosina, S Selberherr IEEE Transactions on Electron Devices 54 (9), 2183-2190, 2007 | 204 | 2007 |
| MOS device modeling at 77 K S Selberherr IEEE Transactions on Electron Devices 36 (8), 1464-1474, 1989 | 199 | 1989 |
| The drift diffusion equation and its applications in MOSFET modeling W Hänsch Springer Science & Business Media, 2012 | 181 | 2012 |
| A CMOS IC for portable EEG acquisition systems R Martins, S Selberherr, FA Vaz IEEE Transactions on Instrumentation and measurement 47 (5), 1191-1196, 1998 | 173 | 1998 |
| Unified particle approach to Wigner-Boltzmann transport in small semiconductor devices M Nedjalkov, H Kosina, S Selberherr, C Ringhofer, DK Ferry Physical Review B 70 (11), 115319, 2004 | 163 | 2004 |
| Semiconductor device modelling R Baets, J Barker, JA Barnard, TM Barton, ME Clarke, A Cappy, ... Springer Science & Business Media, 2012 | 161 | 2012 |
| Simulation of critical IC fabrication processes using advanced physical and numerical methods W Jungling, P Pichler, S Selberherr, E Guerrero, HW Potzl IEEE transactions on electron devices 32 (2), 156-167, 1985 | 149 | 1985 |
| Finite boxes—A generalization of the finite-difference method suitable for semiconductor device simulation AF Franz, GA Franz, S Selberherr, C Ringhofer, P Markowich IEEE Transactions on Electron Devices 30 (9), 1070-1082, 1983 | 131 | 1983 |
| Physically based models of electromigration: From Black’s equation to modern TCAD models RL De Orio, H Ceric, S Selberherr Microelectronics Reliability 50 (6), 775-789, 2010 | 130 | 2010 |
| A temperature dependent model for the saturation velocity in semiconductor materials R Quay, C Moglestue, V Palankovski, S Selberherr Materials Science in Semiconductor Processing 3 (1-2), 149-155, 2000 | 121 | 2000 |
| Electron mobility model for strained-Si devices S Dhar, H Kosina, V Palankovski, SE Ungersböck, S Selberherr IEEE Transactions on Electron Devices 52 (4), 527-533, 2005 | 104 | 2005 |
| The evolution of the MINIMOS mobility model S Selberherr, W Hänsch, M Seavey, J Slotboom Solid-state electronics 33 (11), 1425-1436, 1990 | 104 | 1990 |
| Modeling of tunneling current and gate dielectric reliability for nonvolatile memory devices A Gehring, S Selberherr IEEE Transactions on Device and Materials Reliability 4 (3), 306-319, 2004 | 93 | 2004 |
| The economic limit to Moore's law K Rupp, S Selberherr IEEE Transactions on Semiconductor Manufacturing 24 (1), 1-4, 2010 | 91 | 2010 |
| A two-dimensional model of the avalanche effects in MOS transistors A Schütz, S Selberherr, HW Pötzl Solid-State Electronics 25 (3), 177-183, 1982 | 91 | 1982 |
Tibor GrasserProfessor at TU Wien, Head of Institute for Microelectronics, Fellow IEEEVerified email at iue.tuwien.ac.at
