Siegfried Selberherr
Siegfried Selberherr
Institute for Microelectronics, TU Wien
Verified email at - Homepage
Cited by
Cited by
Analysis and simulation of semiconductor devices
S Selberherr
Springer Science & Business Media, 2012
SIMON-A simulator for single-electron tunnel devices and circuits
C Wasshuber, H Kosina, S Selberherr
IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 1997
MINIMOS-A two-dimensional MOS transistor analyzer
S Selberherr, A Schutz, HW Potzl
IEEE Journal of Solid-State Circuits 15 (4), 605-615, 1980
A review of hydrodynamic and energy-transport models for semiconductor device simulation
T Grasser, TW Tang, H Kosina, S Selberherr
Proceedings of the IEEE 91 (2), 251-274, 2003
Interactive information visualization to explore and query electronic health records
A Rind, TD Wang, W Aigner, S Miksch, K Wongsuphasawat, C Plaisant, ...
Foundations and Trends in Human-Computer Interaction 5 (3), 207-298, 2013
The effect of general strain on the band structure and electron mobility of silicon
E Ungersboeck, S Dhar, G Karlowatz, V Sverdlov, H Kosina, S Selberherr
IEEE Transactions on Electron Devices 54 (9), 2183-2190, 2007
MOS device modeling at 77 K
S Selberherr
IEEE Transactions on Electron Devices 36 (8), 1464-1474, 1989
The drift diffusion equation and its applications in MOSFET modeling
W Hänsch
Springer Science & Business Media, 2012
A CMOS IC for portable EEG acquisition systems
R Martins, S Selberherr, FA Vaz
IEEE Transactions on Instrumentation and measurement 47 (5), 1191-1196, 1998
Unified particle approach to Wigner-Boltzmann transport in small semiconductor devices
M Nedjalkov, H Kosina, S Selberherr, C Ringhofer, DK Ferry
Physical Review B 70 (11), 115319, 2004
Semiconductor device modelling
R Baets, J Barker, JA Barnard, TM Barton, ME Clarke, A Cappy, ...
Springer Science & Business Media, 2012
Simulation of critical IC fabrication processes using advanced physical and numerical methods
W Jungling, P Pichler, S Selberherr, E Guerrero, HW Potzl
IEEE transactions on electron devices 32 (2), 156-167, 1985
Physically based models of electromigration: From Black’s equation to modern TCAD models
RL De Orio, H Ceric, S Selberherr
Microelectronics Reliability 50 (6), 775-789, 2010
Finite boxes—A generalization of the finite-difference method suitable for semiconductor device simulation
AF Franz, GA Franz, S Selberherr, C Ringhofer, P Markowich
IEEE Transactions on electron devices 30 (9), 1070-1082, 1983
A temperature dependent model for the saturation velocity in semiconductor materials
R Quay, C Moglestue, V Palankovski, S Selberherr
Materials Science in Semiconductor Processing 3 (1-2), 149-155, 2000
Electron mobility model for strained-Si devices
S Dhar, H Kosina, V Palankovski, SE Ungersböck, S Selberherr
IEEE Transactions on Electron Devices 52 (4), 527-533, 2005
The evolution of the MINIMOS mobility model
S Selberherr, W Hänsch, M Seavey, J Slotboom
Solid-state electronics 33 (11), 1425-1436, 1990
Modeling of tunneling current and gate dielectric reliability for nonvolatile memory devices
A Gehring, S Selberherr
IEEE Transactions on Device and Materials Reliability 4 (3), 306-319, 2004
The economic limit to Moore's law
K Rupp, S Selberherr
IEEE Transactions on Semiconductor Manufacturing 24 (1), 1-4, 2010
A comparative study of single-electron memories
C Wasshuber, H Kosina, S Selberherr
IEEE Transactions on electron devices 45 (11), 2365-2371, 1998
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