| Metal oxide-resistive memory using graphene-edge electrodes S Lee, J Sohn, Z Jiang, HY Chen, HS Philip Wong Nature communications 6 (1), 8407, 2015 | 153 | 2015 |
| Hyperdimensional computing with 3D VRRAM in-memory kernels: Device-architecture co-design for energy-efficient, error-resilient language recognition H Li, TF Wu, A Rahimi, KS Li, M Rusch, CH Lin, JL Hsu, MM Sabry, ... 2016 IEEE International Electron Devices Meeting (IEDM), 16.1. 1-16.1. 4, 2016 | 139 | 2016 |
| Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication HY Chen, S Brivio, CC Chang, J Frascaroli, TH Hou, B Hudec, M Liu, H Lv, ... Journal of Electroceramics 39, 21-38, 2017 | 101 | 2017 |
| The Role of Ti Capping Layer in HfOx-Based RRAM Devices Z Fang, XP Wang, J Sohn, BB Weng, ZP Zhang, ZX Chen, YZ Tang, ... IEEE Electron Device Letters 35 (9), 912-914, 2014 | 80 | 2014 |
| Four-layer 3D vertical RRAM integrated with FinFET as a versatile computing unit for brain-inspired cognitive information processing H Li, KS Li, CH Lin, JL Hsu, WC Chiu, MC Chen, TT Wu, J Sohn, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 79 | 2016 |
| All-metal-nitride RRAM devices Z Zhang, B Gao, Z Fang, X Wang, Y Tang, J Sohn, HSP Wong, SS Wong, ... IEEE Electron Device Letters 36 (1), 29-31, 2014 | 78 | 2014 |
| Hysteresis-free carbon nanotube field-effect transistors RS Park, G Hills, J Sohn, S Mitra, MM Shulaker, HSP Wong ACS nano 11 (5), 4785-4791, 2017 | 62 | 2017 |
| Ultrathin (∼2nm) HfOxas the fundamental resistive switching element: Thickness scaling limit, stack engineering and 3D integration L Zhao, Z Jiang, HY Chen, J Sohn, K Okabe, B Magyari-Köpe, HSP Wong, ... 2014 IEEE International Electron Devices Meeting, 6.6. 1-6.6. 4, 2014 | 48 | 2014 |
| Phonon conduction in silicon nanobeam labyrinths W Park, G Romano, EC Ahn, T Kodama, J Park, MT Barako, J Sohn, ... Scientific reports 7 (1), 6233, 2017 | 38 | 2017 |
| Impact of thermally dead volume on phonon conduction along silicon nanoladders W Park, J Sohn, G Romano, T Kodama, A Sood, JS Katz, BSY Kim, H So, ... Nanoscale 10 (23), 11117-11122, 2018 | 30 | 2018 |
| Atomically thin graphene plane electrode for 3D RRAM J Sohn, S Lee, Z Jiang, HY Chen, HSP Wong 2014 IEEE International Electron Devices Meeting, 5.3. 1-5.3. 4, 2014 | 28 | 2014 |
| Error-resilient analog image storage and compression with analog-valued rram arrays: an adaptive joint source-channel coding approach X Zheng, R Zarcone, D Paiton, J Sohn, W Wan, B Olshausen, HSP Wong 2018 IEEE International Electron Devices Meeting (IEDM), 3.5. 1-3.5. 4, 2018 | 27 | 2018 |
| First demonstration of RRAM patterned by block copolymer self-assembly Y Wu, H Yi, Z Zhang, Z Jiang, J Sohn, S Wong, HSP Wong 2013 IEEE International Electron Devices Meeting, 20.8. 1-20.8. 4, 2013 | 20 | 2013 |
| Graphene-based 3D XNOR-VRRAM with ternary precision for neuromorphic computing B Alimkhanuly, J Sohn, IJ Chang, S Lee npj 2D Materials and Applications 5 (1), 55, 2021 | 10 | 2021 |
| One-step fabrication of optically transparent polydimethylsiloxane artificial lotus leaf film using under-exposed under-baked photoresist mold Y Yoon, DW Lee, JH Ahn, J Sohn, JB Lee 2012 IEEE 25th International Conference on Micro Electro Mechanical Systems …, 2012 | 9 | 2012 |
| IEEE Symp. VLSI Technol H Li, KS Li, CH Lin, JL Hsu, WC Chiu, MC Chen, TT Wu, J Sohn, ... IEEE, Piscataway, NJ, 1-2, 2016 | 8 | 2016 |
| graphene plane electrode for low power 3d resistive random access memory S Lee, J Sohn, Z Jiang, HY Chen, HSP Wong ECS Transactions 72 (4), 159, 2016 | 2 | 2016 |
| Resistive Switching Random Access Memory-Device Scaling in 3D Architecture and Integration with Complementary Metal Oxide Semiconductor J Sohn Stanford University, 2018 | 1 | 2018 |
